SCALISE, EMILIO

SCALISE, EMILIO  

DIPARTIMENTO DI SCIENZA DEI MATERIALI  

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Risultati 1 - 20 di 62 (tempo di esecuzione: 0.018 secondi).
Titolo Tipologia Data di pubblicazione Autori File
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 01 - Articolo su rivista 2024 Rovaris F.Marzegalli A.Miglio L.Scalise E. +
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 02 - Intervento a convegno 2024 Rovaris, FLanzoni, DMarzegalli, ABarbisan, LMiglio, LScalise, EMontalenti, F +
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 01 - Articolo su rivista 2024 Fantasia A.Rovaris F.Abou El Kheir O.Marzegalli A.Lanzoni D.Scalise E.Montalenti F. +
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 01 - Articolo su rivista 2024 Marzegalli, AnnaMontalenti, FrancescoScalise, Emilio
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 02 - Intervento a convegno 2024 Marzegalli, ARovaris, FBikerouin, MScalise, E +
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 01 - Articolo su rivista 2024 Rovaris F.Lanzoni D.Barbisan L.Miglio L.Marzegalli A.Scalise E.Montalenti F. +
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 01 - Articolo su rivista 2024 Bertoni, IlariaUgolotti, AldoScalise, EmilioMiglio, Leo
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 02 - Intervento a convegno 2024 Fabrizio RovarisAnna marzegalliDaniele LanzoniAndrea FantasiaFrancesco MontalentiEmilio Scalise +
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 02 - Intervento a convegno 2023 Miglio, LScalise, EMarzegalli, A +
Hexagonal Diamond phase of Si and Ge by nanoindentation 02 - Intervento a convegno 2023 Fabrizio RovarisAnna MarzegalliLeonida MiglioEmilio Scalise +
Hexagonal Si and Ge polytypes for silicon photonics 02 - Intervento a convegno 2023 Emilio ScaliseFabrizio RovarisAnna Marzegalli
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 01 - Articolo su rivista 2023 Ferrari B. M.Scalise E.Vanacore G. M. +
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 01 - Articolo su rivista 2022 Barbisan L.Scalise E.Marzegalli A.
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 01 - Articolo su rivista 2022 Scalise, EMarzegalli, A +
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 02 - Intervento a convegno 2022 Miglio, LScalise, EMarzegalli, A +
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 01 - Articolo su rivista 2022 Vanacore G. M.Scalise E.Barbisan L.Capitani G.Marzegalli A.Bergamaschini R.Miglio L. +
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 01 - Articolo su rivista 2022 Scalise E.Montalenti F.Miglio L. +
Morphological evolution and compositional segregation effects in core-shell nanowires 02 - Intervento a convegno 2021 Bergamaschini RScalise EAlbani MMontalenti FMiglio L +
New approaches and understandings in the growth of cubic silicon carbide 01 - Articolo su rivista 2021 Scalise E.Marzegalli A.Miglio L. +
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 01 - Articolo su rivista 2021 Bergamaschini R.Albani M.Scalise E.Montalenti F.Miglio L. +