ALBANI, MARCO GIOCONDO
ALBANI, MARCO GIOCONDO
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes
2015 Salvalaglio, M; Bergamaschini, R; Backofen, R; Albani, M; Rovaris, F; Montalenti, F; Voigt, A; Miglio, L
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing.
2015 Montalenti, F; Bergamaschini, R; Salvalaglio, M; Backofen, R; Rovaris, F; Albani, M; Marzegalli, A; Voigt, A; Miglio, L
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing
2015 Montalenti, F; Bergamaschini, R; Salvalaglio, M; Backofen, R; Rovaris, F; Albani, M; Marzegalli, A; Voigt, A; Miglio, L
Continuum modeling of heteroepitaxial growth in semiconductors
2016 Montalenti, F; Rovaris, F; Bergamaschini, R; Salvalaglio, M; Albani, M; Miglio, L; Backofen, R; Voigt, A
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing
2016 Bergamaschini, R; Albani, M; Salvalaglio, M; Backofen, R; Voigt, A; Miglio, L; Montalenti, F
Dynamics of pit filling in heteroepitaxy via phase-field simulations
2016 Albani, M; Bergamaschini, R; Montalenti, F
Dynamics of pit filling in heteroepitaxy via phase-field simulations
2016 Albani, M; Bergamaschini, R; Montalenti, F
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires
2016 Gagliano, L; Belabbes, A; Albani, M; Assali, S; Verheijen, M; Miglio, L; Bechstedt, F; Haverkort, J; Bakkers, E
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires
2016 Gagliano, L; Belabbes, A; Albani, M; Assali, S; Verheijen, M; Miglio, L; Bechstedt, F; Haverkort, J; Bakkers, E
Strain and strain-driven effects in coaxial nanowires
2017 Miglio, L; Albani, M; Bergamaschini, R; Gagliano, L; Assali, S; Verheijen, M; Bakkers, E
Strain relaxation in semiconductor core/shell nanowires
2017 Albani, M; Bergamaschini, R; Gagliano, L; Assali, S; Verheijen, M; Bakkers, E; Miglio, L
Modeling semiconductor heteroepitaxy: a continuum approach
2017 Albani, M; Bergamaschini, R; Rovaris, F; Miglio, L; Montalenti, F
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach
2017 Bergamaschini, R; Albani, M; Montalenti, F; Miglio, L
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD
2017 Yamamoto, Y; Zaumseil, P; Capellini, G; Andreas Schubert, M; Hesse, A; Albani, M; Bergamaschini, R; Montalenti, F; Schroeder, T; Tillack, B
Modelling the kinetic growth mode of GaAs nanomembranes
2018 Albani, M; Ghisalberti, L; Bergamaschini, R; Friedl, M; Salvalaglio, M; Voigt, A; Montalenti, F; Fontcuberta i Morral, A; Miglio, L
Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case
2018 Gagliano, L; Albani, M; Verheijen, M; Bakkers, E; Miglio, L
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires
2018 Albani, M; Assali, S; Verheijen, M; Koelling, S; Bergamaschini, R; Pezzoli, F; Bakkers, E; Miglio, L
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals
2018 Meduňa, M; Isa, F; Jung, A; Marzegalli, A; Albani, M; Isella, G; Zweiacker, K; Miglio, L; von Känel, H
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment
2018 Albani, M; Ghisalberti, L; Bergamaschini, R; Friedl, M; Salvalaglio, M; Voigt, A; Montalenti, F; Tütüncüoglu, G; Fontcuberta i Morral, A; Miglio, L
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture
2018 Albani, M; Marzegalli, A; Bergamaschini, R; Mauceri, M; Crippa, D; La Via, F; Von Känel, H; Miglio, L