We investigated the temperature dependence (10-180 K) of the photoluminescence (Pi,) emission spectrum of self-organized InAs/GaAs quantum dots grown under different conditions. The temperature dependence of the PL intensity is determined by two thermally activated processes: (i) quenching due to the escape of carriers from the quantum dots and (ii) carrier transfer between dots via wetting layer states. The existence of different dot families is confirmed by the deconvolution of the spectra in gaussian components with full width half maxima of 20-30 meV. The transfer of excitation is responsible for the sigmoidal temperature dependence of the peak energies of undeconvoluted PL bands. (C) 1996 American Institute of Physics.

Brusaferri, L., Sanguinetti, S., Grilli, E., Guzzi, M., Bignazzi, A., Bogani, F., et al. (1996). Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots. APPLIED PHYSICS LETTERS, 69(22), 3354-3356 [10.1063/1.117304].

Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots

SANGUINETTI, STEFANO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
1996

Abstract

We investigated the temperature dependence (10-180 K) of the photoluminescence (Pi,) emission spectrum of self-organized InAs/GaAs quantum dots grown under different conditions. The temperature dependence of the PL intensity is determined by two thermally activated processes: (i) quenching due to the escape of carriers from the quantum dots and (ii) carrier transfer between dots via wetting layer states. The existence of different dot families is confirmed by the deconvolution of the spectra in gaussian components with full width half maxima of 20-30 meV. The transfer of excitation is responsible for the sigmoidal temperature dependence of the peak energies of undeconvoluted PL bands. (C) 1996 American Institute of Physics.
Articolo in rivista - Articolo scientifico
Quantum Dot; Electronic Properties; Photoluminescence; Semiconductors
English
3354
3356
3
Brusaferri, L., Sanguinetti, S., Grilli, E., Guzzi, M., Bignazzi, A., Bogani, F., et al. (1996). Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots. APPLIED PHYSICS LETTERS, 69(22), 3354-3356 [10.1063/1.117304].
Brusaferri, L; Sanguinetti, S; Grilli, E; Guzzi, M; Bignazzi, A; Bogani, F; Carraresi, L; Colocci, M; Bosacchi, A; Frigeri, P; Franchi, S
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/33494
Citazioni
  • Scopus 209
  • ???jsp.display-item.citation.isi??? 204
Social impact