We present a detailed study of the dependence of the spectral characteristics of quasiresonantly excited InAs/GaAs quantum dots on electronic structure, temperature, and hydrogen content. Multiphonon resonances dominate the resonantly excited emission spectra. Such multiphonon resonances are attributed to the competition between two different channels ruling carrier thermalization in an ensemble of quantum dots: decay between polaronic states and efficient nonradiative intradot decay. This supports an effective "phonon bottleneck" in quantum dots, which is only partially relaxed by the presence of a fast polaron thermalization channel. © 2008 The American Physical Society.
Sanguinetti, S., Guzzi, M., Grilli, E., Gurioli, M., Seravalli, L., Frigeri, P., et al. (2008). Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 78, 085313 [10.1103/PhysRevB.78.085313].
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots
SANGUINETTI, STEFANO;GUZZI, MARIO;GRILLI, EMANUELE ENRICO;
2008
Abstract
We present a detailed study of the dependence of the spectral characteristics of quasiresonantly excited InAs/GaAs quantum dots on electronic structure, temperature, and hydrogen content. Multiphonon resonances dominate the resonantly excited emission spectra. Such multiphonon resonances are attributed to the competition between two different channels ruling carrier thermalization in an ensemble of quantum dots: decay between polaronic states and efficient nonradiative intradot decay. This supports an effective "phonon bottleneck" in quantum dots, which is only partially relaxed by the presence of a fast polaron thermalization channel. © 2008 The American Physical Society.
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