We investigated vertically aligned InAs/GaAs QD structures, grown by atomic layer molecular beam epitaxy, with a number N of layers and with spacer thicknesses d. QD alignment and structure quality were checked by transmission electron microscopy. The dependencies of carrier capture, decay dynamics and existence of quenching channels on the design parameters N and d were studied by time resolved photoluminescence (PL), PL excitation (PLE) and PL temperature-dependent measurements. Our results show that the carrier capture and the radiative efficiency of the QDs are negatively affected by increasing the number of QD layers and by reducing the spacer thicknesses; this effect is likely to be related to the increase of defect concentrations in GaAs spacers, due to relaxation of an increasingly large strain.
Citazione: | Sanguinetti, S., Padovani, M., Gurioli, M., Grilli E, Guzzi M, Vinattieri, A., et al. (2000). Carrier Capture And Quenching in Vertically Aligned Quantum Dots. THIN SOLID FILMS, 380(1-2), 224-226. |
Tipo: | Articolo in rivista - Articolo scientifico |
Carattere della pubblicazione: | Scientifica |
Titolo: | Carrier Capture And Quenching in Vertically Aligned Quantum Dots |
Autori: | Sanguinetti, S; Padovani, M; Gurioli, M; Grilli E; Guzzi M; Vinattieri, A; Colocci, M; Frigeri, P; Franchi, S; Lazzarini, L; Salviati, G |
Autori: | |
Data di pubblicazione: | 2000 |
Lingua: | English |
Rivista: | THIN SOLID FILMS |
Digital Object Identifier (DOI): | 10.1016/S0040-6090(00)01511-X |
Appare nelle tipologie: | 01 - Articolo su rivista |