The polarization of the direct gap emission from Ge/SiGe multiple quantum wells has been studied in the 4 K to 300 K temperature range, and in samples with different well thicknesses. Our results demonstrate that the polarization type and degree strongly depend on the excitation of electrons from the heavy hole and the light hole subbands, thus providing an effective degree of freedom to control the polarization of the direct interband emission. In addition, the analysis of the temperature dependence of the polarization degree highlights spin depolarization mechanisms
Giorgioni, A., Pezzoli, F., Gatti, E., Cecchi, S., Inoki, C., Deneke, C., et al. (2013). Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells. APPLIED PHYSICS LETTERS, 102(1) [10.1063/1.4774316].
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells
GIORGIONI, ANNA;PEZZOLI, FABIO;GATTI, ELEONORA;Cecchi, S;GRILLI, EMANUELE ENRICO;GUZZI, MARIO
2013
Abstract
The polarization of the direct gap emission from Ge/SiGe multiple quantum wells has been studied in the 4 K to 300 K temperature range, and in samples with different well thicknesses. Our results demonstrate that the polarization type and degree strongly depend on the excitation of electrons from the heavy hole and the light hole subbands, thus providing an effective degree of freedom to control the polarization of the direct interband emission. In addition, the analysis of the temperature dependence of the polarization degree highlights spin depolarization mechanisms
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