By means of resonant Raman spectroscopy we investigated the strain on a single ultrathin crystalline silicon layer, locally induced by buried SiGe nanostructures. The spectrum of a 5-nm-thick silicon layer on top of SiGe islands shows a single highly strained feature attributed to the out-of-plane phonon. The direct comparison of the experimental results with finite-element methods through spectral simulation shows excellent agreement that clarifies the physical origin of the spectrum. An increase in the silicon layer thickness up to 40 nm results in a progressive reduction in the strain

Bonera, E., Pezzoli, F., Picco, A., Vastola, G., Stoffel, M., Grilli, E.E., et al. (2009). Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 79(7) [10.1103/PhysRevB.79.075321].

Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations

BONERA, EMILIANO;PEZZOLI, FABIO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;MIGLIO, LEONIDA
2009

Abstract

By means of resonant Raman spectroscopy we investigated the strain on a single ultrathin crystalline silicon layer, locally induced by buried SiGe nanostructures. The spectrum of a 5-nm-thick silicon layer on top of SiGe islands shows a single highly strained feature attributed to the out-of-plane phonon. The direct comparison of the experimental results with finite-element methods through spectral simulation shows excellent agreement that clarifies the physical origin of the spectrum. An increase in the silicon layer thickness up to 40 nm results in a progressive reduction in the strain
Si
Articolo in rivista - Articolo scientifico
Scientifica
semiconductors, quantum structures, Raman
English
Bonera, E., Pezzoli, F., Picco, A., Vastola, G., Stoffel, M., Grilli, E.E., et al. (2009). Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 79(7) [10.1103/PhysRevB.79.075321].
Bonera, E; Pezzoli, F; Picco, A; Vastola, G; Stoffel, M; Grilli, E; Guzzi, M; Rastelli, A; Schmidt, O; Miglio, L
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/5620
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