By means of resonant Raman spectroscopy we investigated the strain on a single ultrathin crystalline silicon layer, locally induced by buried SiGe nanostructures. The spectrum of a 5-nm-thick silicon layer on top of SiGe islands shows a single highly strained feature attributed to the out-of-plane phonon. The direct comparison of the experimental results with finite-element methods through spectral simulation shows excellent agreement that clarifies the physical origin of the spectrum. An increase in the silicon layer thickness up to 40 nm results in a progressive reduction in the strain
Bonera, E., Pezzoli, F., Picco, A., Vastola, G., Stoffel, M., Grilli, E.E., et al. (2009). Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 79(7).
Citazione: | Bonera, E., Pezzoli, F., Picco, A., Vastola, G., Stoffel, M., Grilli, E.E., et al. (2009). Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 79(7). |
Tipo: | Articolo in rivista - Articolo scientifico |
Carattere della pubblicazione: | Scientifica |
Presenza di un coautore afferente ad Istituzioni straniere: | Si |
Titolo: | Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations |
Autori: | Bonera, E; Pezzoli, F; Picco, A; Vastola, G; Stoffel, M; Grilli, EE; Guzzi, M; Rastelli, A; Schmidt, OG; Miglio, L |
Autori: | |
Data di pubblicazione: | 2009 |
Lingua: | English |
Rivista: | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevB.79.075321 |
Appare nelle tipologie: | 01 - Articolo su rivista |