We report on the molecular beam epitaxy growth of InAs self-assembled quantum dots on (N 1 1)A/B GaAs substrates, where N ranges from 2 to 5. For each substrate we prepared three different InAs coverages (from ≈ 1.0 × 1015 to ≈ 1.5 × 1015 InAs molecules cm-2), with growth parameters optimised for self assembly on the (1 0 0) surface. At 2 K, all the samples show photoluminescence of evident quantum dot origin with an efficiency comparable to that of samples grown on (1 0 0)GaAs substrates. Photoluminescence spectra show inhomogeneously broadened, structured peaks in the 1.1-1.4 eV range. Full optical characterisation is reported. © 1998 Elsevier Science B.V. All rights reserved.
Fortina, S., Sanguinetti, S., Grilli, E., Guzzi, M., Henini, M., Polimeni, A., et al. (1998). InAs Quantum Dots Grown on Non-Conventionally Oriented GaAs Substrates. JOURNAL OF CRYSTAL GROWTH, 187(1), 126-132 [10.1016/S0022-0248(97)00848-8].
InAs Quantum Dots Grown on Non-Conventionally Oriented GaAs Substrates
SANGUINETTI, STEFANO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
1998
Abstract
We report on the molecular beam epitaxy growth of InAs self-assembled quantum dots on (N 1 1)A/B GaAs substrates, where N ranges from 2 to 5. For each substrate we prepared three different InAs coverages (from ≈ 1.0 × 1015 to ≈ 1.5 × 1015 InAs molecules cm-2), with growth parameters optimised for self assembly on the (1 0 0) surface. At 2 K, all the samples show photoluminescence of evident quantum dot origin with an efficiency comparable to that of samples grown on (1 0 0)GaAs substrates. Photoluminescence spectra show inhomogeneously broadened, structured peaks in the 1.1-1.4 eV range. Full optical characterisation is reported. © 1998 Elsevier Science B.V. All rights reserved.
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