We report on the molecular beam epitaxy growth of InAs self-assembled quantum dots on (N 1 1)A/B GaAs substrates, where N ranges from 2 to 5. For each substrate we prepared three different InAs coverages (from ≈ 1.0 × 1015 to ≈ 1.5 × 1015 InAs molecules cm-2), with growth parameters optimised for self assembly on the (1 0 0) surface. At 2 K, all the samples show photoluminescence of evident quantum dot origin with an efficiency comparable to that of samples grown on (1 0 0)GaAs substrates. Photoluminescence spectra show inhomogeneously broadened, structured peaks in the 1.1-1.4 eV range. Full optical characterisation is reported. © 1998 Elsevier Science B.V. All rights reserved.
Fortina, S.C., Sanguinetti, S., Grilli, E., Guzzi, M., Henini, M., Polimeni, A., et al. (1998). InAs Quantum Dots Grown on Non-Conventionally Oriented GaAs Substrates. JOURNAL OF CRYSTAL GROWTH, 187(1), 126-132.
Citazione: | Fortina, S.C., Sanguinetti, S., Grilli, E., Guzzi, M., Henini, M., Polimeni, A., et al. (1998). InAs Quantum Dots Grown on Non-Conventionally Oriented GaAs Substrates. JOURNAL OF CRYSTAL GROWTH, 187(1), 126-132. |
Tipo: | Articolo in rivista - Articolo scientifico |
Carattere della pubblicazione: | Scientifica |
Titolo: | InAs Quantum Dots Grown on Non-Conventionally Oriented GaAs Substrates |
Autori: | Fortina, SC; Sanguinetti, S; Grilli, E; Guzzi, M; Henini, M; Polimeni, A; Eaves, L |
Autori: | |
Data di pubblicazione: | 1998 |
Lingua: | English |
Rivista: | JOURNAL OF CRYSTAL GROWTH |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/S0022-0248(97)00848-8 |
Appare nelle tipologie: | 01 - Articolo su rivista |