Ge is emerging as an interesting material for spintronic applications. We demonstrate that in SiGe heterostructures strain and quantum confinement effects can be used to tailor spin related properties enhancing the spin polarization of injected carriers above the bulk limit. Moreover the fast ?-L electron scattering and the strain induced removal of the heavy-hole, light-hole degeneracy, make SiGe heterostructures an ideal material platform for the study of hole dynamics. © The Electrochemical Society

Isella, G., Bottegoni, F., Cecchi, S., Ferrari, A., Ciccacci, F., Pezzoli, F., et al. (2012). Optical spin orientation in SiGe heterostructures. ECS TRANSACTIONS, 50(9), 831-836 [10.1149/05009.0831ecst].

Optical spin orientation in SiGe heterostructures

Cecchi, S;PEZZOLI, FABIO;GIORGIONI, ANNA;GATTI, ELEONORA;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
2012

Abstract

Ge is emerging as an interesting material for spintronic applications. We demonstrate that in SiGe heterostructures strain and quantum confinement effects can be used to tailor spin related properties enhancing the spin polarization of injected carriers above the bulk limit. Moreover the fast ?-L electron scattering and the strain induced removal of the heavy-hole, light-hole degeneracy, make SiGe heterostructures an ideal material platform for the study of hole dynamics. © The Electrochemical Society
Articolo in rivista - Articolo scientifico
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Isella, G., Bottegoni, F., Cecchi, S., Ferrari, A., Ciccacci, F., Pezzoli, F., et al. (2012). Optical spin orientation in SiGe heterostructures. ECS TRANSACTIONS, 50(9), 831-836 [10.1149/05009.0831ecst].
Isella, G; Bottegoni, F; Cecchi, S; Ferrari, A; Ciccacci, F; Pezzoli, F; Giorgioni, A; Gatti, E; Grilli, E; Guzzi, M; Lange, C; Köster, N; Woscholski, R; Chatterjee, S; Trivedi, D; Li, P; Song, Y; Dery, H
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/136867
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