We report micron-sized Ge crystal arrays grown on deeply patterned Si substrates that yield a surge of the interband photoluminescence intensity by more than 2 orders of magnitude with respect to that typical for epitaxial layers directly grown on planar substrates. This finding is ascribed to the strongly modified internal quantum efficiency induced by controlling the nonradiative recombination at dislocations and to the improved light extraction offered by the array architecture. By spectrally resolving the interband and the dislocation-related luminescence, we address the parasitic activity of extended defects and its impact on the optical properties of the heterosystem. Such results are then exploited along with band gap engineering to design SiGe reflectors and Ge quantum wells that are effective in further amplifying the emission yield

Pezzoli, F., Isa, F., Isella, G., Falub, C., Kreiliger, T., Salvalaglio, M., et al. (2014). Ge Crystals on Si Show Their Light. PHYSICAL REVIEW APPLIED, 1(4) [10.1103/PhysRevApplied.1.044005].

Ge Crystals on Si Show Their Light

PEZZOLI, FABIO
Primo
;
SALVALAGLIO, MARCO;BERGAMASCHINI, ROBERTO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;MIGLIO, LEONIDA
Ultimo
2014

Abstract

We report micron-sized Ge crystal arrays grown on deeply patterned Si substrates that yield a surge of the interband photoluminescence intensity by more than 2 orders of magnitude with respect to that typical for epitaxial layers directly grown on planar substrates. This finding is ascribed to the strongly modified internal quantum efficiency induced by controlling the nonradiative recombination at dislocations and to the improved light extraction offered by the array architecture. By spectrally resolving the interband and the dislocation-related luminescence, we address the parasitic activity of extended defects and its impact on the optical properties of the heterosystem. Such results are then exploited along with band gap engineering to design SiGe reflectors and Ge quantum wells that are effective in further amplifying the emission yield
Articolo in rivista - Articolo scientifico
dislocations; Si; Ge; photoluminescence; silicon
English
2014
1
4
044005
reserved
Pezzoli, F., Isa, F., Isella, G., Falub, C., Kreiliger, T., Salvalaglio, M., et al. (2014). Ge Crystals on Si Show Their Light. PHYSICAL REVIEW APPLIED, 1(4) [10.1103/PhysRevApplied.1.044005].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/53804
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