A theoretical approach to the lattice dynamics of Si1-xGex alloys within a valence force field framework is discussed. A modified Keating model, the anharmonic Keating, was employed to perform supercell calculations in order to investigate accurately the three Raman active optical phonon modes. Theoretical results on both relaxed and strained SiGe samples are shown. A detailed study of the biaxial strain-induced shift of phonon modes of epitaxial SiGe alloys has been performed in all the composition range. Furthermore, a comparison of experimental data with the model results on phonon strain shift coefficients will be also discussed. (C) 2006 Elsevier Ltd. All rights reserved
Pezzoli, F., Grilli, E., Guzzi, M., Sanguinetti, S., Chrastina, D., Isella, G., et al. (2006). Strain-induced shift of phonon modes in Si1-xGex alloys. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 9(04-mag), 541-545 [10.1016/j.mssp.2006.08.046].
Strain-induced shift of phonon modes in Si1-xGex alloys
PEZZOLI, FABIO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;SANGUINETTI, STEFANO;
2006
Abstract
A theoretical approach to the lattice dynamics of Si1-xGex alloys within a valence force field framework is discussed. A modified Keating model, the anharmonic Keating, was employed to perform supercell calculations in order to investigate accurately the three Raman active optical phonon modes. Theoretical results on both relaxed and strained SiGe samples are shown. A detailed study of the biaxial strain-induced shift of phonon modes of epitaxial SiGe alloys has been performed in all the composition range. Furthermore, a comparison of experimental data with the model results on phonon strain shift coefficients will be also discussed. (C) 2006 Elsevier Ltd. All rights reserved
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