A systematic study of the optical and microscopic properties of self-assembled quantum dots in InxGa1-xAs/GaAs heterostructures has been carried out by varying the In concentration and the (InGa)As layer thickness on both (1 0 0) and (3 1 1)B orientations. Photoluminescence spectroscopy indicates that the dot formation on high-index substrates is delayed at larger amount of (InGa)As with respect to (1 0 0) substrates for both moderate (x = 0.5) and high (x = 1.0) lattice mismatch. Atomic force microscopy shows that consistently smaller and flatter dots are obtained on high-index planes, highlighting the important role played by substrate morphology on the dot self-aggregation process.
Polimeni, A., Patane', A., Henini, M., Eaves, L., Main, P., Sanguinetti, S., et al. (1999). Influence of High-Index GaAs Substrates on the Growth of Highly-Strained (InGa)As/GaAs Heterostructures. JOURNAL OF CRYSTAL GROWTH, 201-202, 276-279.
Citazione: | Polimeni, A., Patane', A., Henini, M., Eaves, L., Main, P., Sanguinetti, S., et al. (1999). Influence of High-Index GaAs Substrates on the Growth of Highly-Strained (InGa)As/GaAs Heterostructures. JOURNAL OF CRYSTAL GROWTH, 201-202, 276-279. |
Tipo: | Articolo in rivista - Articolo scientifico |
Carattere della pubblicazione: | Scientifica |
Titolo: | Influence of High-Index GaAs Substrates on the Growth of Highly-Strained (InGa)As/GaAs Heterostructures |
Autori: | Polimeni, A; Patane', A; Henini, M; Eaves, L; Main, P; Sanguinetti, S; Guzzi, M |
Autori: | |
Data di pubblicazione: | 1999 |
Lingua: | English |
Rivista: | JOURNAL OF CRYSTAL GROWTH |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/S0022-0248(98)01339-6 |
Appare nelle tipologie: | 01 - Articolo su rivista |