A systematic study of the optical and microscopic properties of self-assembled quantum dots in InxGa1-xAs/GaAs heterostructures has been carried out by varying the In concentration and the (InGa)As layer thickness on both (1 0 0) and (3 1 1)B orientations. Photoluminescence spectroscopy indicates that the dot formation on high-index substrates is delayed at larger amount of (InGa)As with respect to (1 0 0) substrates for both moderate (x = 0.5) and high (x = 1.0) lattice mismatch. Atomic force microscopy shows that consistently smaller and flatter dots are obtained on high-index planes, highlighting the important role played by substrate morphology on the dot self-aggregation process.
Polimeni, A., Patane', A., Henini, M., Eaves, L., Main, P., Sanguinetti, S., et al. (1999). Influence of High-Index GaAs Substrates on the Growth of Highly-Strained (InGa)As/GaAs Heterostructures. JOURNAL OF CRYSTAL GROWTH, 201-202, 276-279 [10.1016/S0022-0248(98)01339-6].
Influence of High-Index GaAs Substrates on the Growth of Highly-Strained (InGa)As/GaAs Heterostructures
SANGUINETTI, STEFANO;GUZZI, MARIO
1999
Abstract
A systematic study of the optical and microscopic properties of self-assembled quantum dots in InxGa1-xAs/GaAs heterostructures has been carried out by varying the In concentration and the (InGa)As layer thickness on both (1 0 0) and (3 1 1)B orientations. Photoluminescence spectroscopy indicates that the dot formation on high-index substrates is delayed at larger amount of (InGa)As with respect to (1 0 0) substrates for both moderate (x = 0.5) and high (x = 1.0) lattice mismatch. Atomic force microscopy shows that consistently smaller and flatter dots are obtained on high-index planes, highlighting the important role played by substrate morphology on the dot self-aggregation process.
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