In the Raman spectrum of epitaxial Si 1-x Ge x alloys, the composition effect, that determines the three mode peak position, is superimposed to the phonon shift caused by strain. Therefore, the experimental spectra interpretation remains not straightforward, unless vibrational properties calculations of such systems are available. In this paper, reticular dynamic calculations within a modified Keating model, the Anharmonic Keating, are discussed. A new set of model parameters is introduced, providing simple and predictive supercell calculations to investigate accurately the three Raman-active phonon modes in Si 1-x Ge x alloys. The recalculated AK model is successfully employed to model the zone centre Raman-active phonon modes of relaxed and hydrostatically stressed Si 1-x Ge x alloys. The results of the calculations are in quantitative agreement with experimental data reported in literature
Pezzoli, F., Sanguinetti, S., Bonera, E., Grilli, E.E., & Guzzi, M. (2007). Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys. JOURNAL OF PHYSICS. CONFERENCE SERIES, 92(1) [10.1088/1742-6596/92/1/012152].
Citazione: | Pezzoli, F., Sanguinetti, S., Bonera, E., Grilli, E.E., & Guzzi, M. (2007). Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys. JOURNAL OF PHYSICS. CONFERENCE SERIES, 92(1) [10.1088/1742-6596/92/1/012152]. | |
Tipo: | Articolo in rivista - Articolo scientifico | |
Carattere della pubblicazione: | Scientifica | |
Presenza di un coautore afferente ad Istituzioni straniere: | No | |
Titolo: | Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys | |
Autori: | Pezzoli, F; Sanguinetti, S; Bonera, E; Grilli, EE; Guzzi, M | |
Autori: | ||
Data di pubblicazione: | 2007 | |
Lingua: | English | |
Rivista: | JOURNAL OF PHYSICS. CONFERENCE SERIES | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1088/1742-6596/92/1/012152 | |
Appare nelle tipologie: | 01 - Articolo su rivista |