We studied the plastic deformation of an ultrathin silicon-on-insulator with epitaxial Si1−xGex by transmission electron microscopy, Raman spectroscopy, and finite-element method. We analyzed a top Si layer of 10 nm (testing also a 2 nm layer) with epitaxial Si0.64Ge0.36 stressors of 50 and 100 nm. SiGe plastically deforms the top Si layer, and this strain remains even when Si1−xGex is removed. For low dislocation densities, dislocations are gettered close to the Si/SiO2 interface, while the SiGe/Si interface is coherent. Beyond a threshold dislocation density, interactions between dislocations force additional dislocations to position at the Si1−xGex/Si interface.
Bonera, E., Gatti, R., Isella, G., Norga, G., Picco, A., Grilli, E., et al. (2013). Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor. APPLIED PHYSICS LETTERS, 103(5), 053104-053107 [10.1063/1.4817071].
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor
BONERA, EMILIANO;GATTI, RICCARDO;PICCO, ANDREA;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;MIGLIO, LEONIDA
2013
Abstract
We studied the plastic deformation of an ultrathin silicon-on-insulator with epitaxial Si1−xGex by transmission electron microscopy, Raman spectroscopy, and finite-element method. We analyzed a top Si layer of 10 nm (testing also a 2 nm layer) with epitaxial Si0.64Ge0.36 stressors of 50 and 100 nm. SiGe plastically deforms the top Si layer, and this strain remains even when Si1−xGex is removed. For low dislocation densities, dislocations are gettered close to the Si/SiO2 interface, while the SiGe/Si interface is coherent. Beyond a threshold dislocation density, interactions between dislocations force additional dislocations to position at the Si1−xGex/Si interface.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
