An experimental study of the direct-gap related optical transitions in strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells (MQWs) is presented. These structures are of particular interest due to the proximity of Γ-type and L-type conduction band states and due to their type I band alignment. The samples were grown by low-energy plasma-enhanced CVD and consist of Ge MQWs with a large numbers of periods and good morphological quality grown onto thick graded Si1 - x Gex buffer layers. The transmission spectra, which shows clear evidence of excitonic transitions, are studied as a function of temperature in the 5-300 K range. Preliminary results of photocurrent measurements performed on the same structures using metal-semiconductor-metal contact are discussed. © 2008 Elsevier B.V. All rights reserved.
Bonfanti, M., Grilli, E.E., Guzzi, M., Chrastina, H.D., Isella, G., von Kaenel, H., et al. (2009). Direct gap related optical transitions in Ge/SiGe quantum wells. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 41(6), 972-975.
Citazione: | Bonfanti, M., Grilli, E.E., Guzzi, M., Chrastina, H.D., Isella, G., von Kaenel, H., et al. (2009). Direct gap related optical transitions in Ge/SiGe quantum wells. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 41(6), 972-975. |
Tipo: | Articolo in rivista - Articolo scientifico |
Carattere della pubblicazione: | Scientifica |
Presenza di un coautore afferente ad Istituzioni straniere: | Si |
Titolo: | Direct gap related optical transitions in Ge/SiGe quantum wells |
Autori: | Bonfanti, M; Grilli, EE; Guzzi, M; Chrastina, HD; Isella, G; von Kaenel, H; Sigg, H |
Autori: | |
Data di pubblicazione: | 2009 |
Lingua: | English |
Rivista: | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1016/j.physe.2008.08.052 |
Appare nelle tipologie: | 01 - Articolo su rivista |