An experimental study of the direct-gap related optical transitions in strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells (MQWs) is presented. These structures are of particular interest due to the proximity of Γ-type and L-type conduction band states and due to their type I band alignment. The samples were grown by low-energy plasma-enhanced CVD and consist of Ge MQWs with a large numbers of periods and good morphological quality grown onto thick graded Si1 - x Gex buffer layers. The transmission spectra, which shows clear evidence of excitonic transitions, are studied as a function of temperature in the 5-300 K range. Preliminary results of photocurrent measurements performed on the same structures using metal-semiconductor-metal contact are discussed. © 2008 Elsevier B.V. All rights reserved.

Bonfanti, M., Grilli, E., Guzzi, M., Chrastina, H., Isella, G., von Kaenel, H., et al. (2009). Direct gap related optical transitions in Ge/SiGe quantum wells. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 41(6), 972-975 [10.1016/j.physe.2008.08.052].

Direct gap related optical transitions in Ge/SiGe quantum wells

GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
2009

Abstract

An experimental study of the direct-gap related optical transitions in strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells (MQWs) is presented. These structures are of particular interest due to the proximity of Γ-type and L-type conduction band states and due to their type I band alignment. The samples were grown by low-energy plasma-enhanced CVD and consist of Ge MQWs with a large numbers of periods and good morphological quality grown onto thick graded Si1 - x Gex buffer layers. The transmission spectra, which shows clear evidence of excitonic transitions, are studied as a function of temperature in the 5-300 K range. Preliminary results of photocurrent measurements performed on the same structures using metal-semiconductor-metal contact are discussed. © 2008 Elsevier B.V. All rights reserved.
Articolo in rivista - Articolo scientifico
Spectroscopy, semiconductors, quantum structures
English
972
975
4
Bonfanti, M., Grilli, E., Guzzi, M., Chrastina, H., Isella, G., von Kaenel, H., et al. (2009). Direct gap related optical transitions in Ge/SiGe quantum wells. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 41(6), 972-975 [10.1016/j.physe.2008.08.052].
Bonfanti, M; Grilli, E; Guzzi, M; Chrastina, H; Isella, G; von Kaenel, H; Sigg, H
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/8041
Citazioni
  • Scopus 19
  • ???jsp.display-item.citation.isi??? 19
Social impact