Optical and morphological properties of self-assembled In(Ga)As/GaAs quantum dot systems, grown on high index (N11) substrates, for a wide range of orientations, coverages and compositions, are investigated. The use of high Miller index substrate orientations permits to intervene on major quantum dots properties such as shape, size distribution, transition energy and emission polarization, thus, opening a wide range of device design opportunities.

Sanguinetti, S., Miotto, A., Castiglioni, S., Grilli, E., Guzzi, M., Henini, M., et al. (1999). Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces. MICROELECTRONICS JOURNAL, 30(4-5), 419-425 [10.1016/S0026-2692(98)00146-3].

Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces

SANGUINETTI, STEFANO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
1999

Abstract

Optical and morphological properties of self-assembled In(Ga)As/GaAs quantum dot systems, grown on high index (N11) substrates, for a wide range of orientations, coverages and compositions, are investigated. The use of high Miller index substrate orientations permits to intervene on major quantum dots properties such as shape, size distribution, transition energy and emission polarization, thus, opening a wide range of device design opportunities.
Articolo in rivista - Articolo scientifico
Semiconductors, Spectroscopy, Quantum Dots
English
1999
30
4-5
419
425
none
Sanguinetti, S., Miotto, A., Castiglioni, S., Grilli, E., Guzzi, M., Henini, M., et al. (1999). Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces. MICROELECTRONICS JOURNAL, 30(4-5), 419-425 [10.1016/S0026-2692(98)00146-3].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/2504
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