The effects of a piezoelectric field on the optical properties and carrier kinetics of strained InAs/GaAs sell-assembled quantum dot heterastructures grown on (N11) substrates with A or B termination are presented. The piezoelectric-induced quantum-confined Stark shift in (N11) quantum dots grows with 1/N and shows an asymmetric dependence on whether the substrate has A or B termination. Time-dependent optical nonlinearity, induced in QDs when the piezoelectric field is screened by photogenerated carriers, is investigated by means of time-resolved photoluminescence.
Sanguinetti, S., Gurioli, M., Grilli, E., Guzzi, M., Henini, M. (2001). Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 224(1), 111-114 [10.1002/1521-3951(200103)224:1<111::AID-PSSB111>3.0.CO;2-R].
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots
SANGUINETTI, STEFANO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
2001
Abstract
The effects of a piezoelectric field on the optical properties and carrier kinetics of strained InAs/GaAs sell-assembled quantum dot heterastructures grown on (N11) substrates with A or B termination are presented. The piezoelectric-induced quantum-confined Stark shift in (N11) quantum dots grows with 1/N and shows an asymmetric dependence on whether the substrate has A or B termination. Time-dependent optical nonlinearity, induced in QDs when the piezoelectric field is screened by photogenerated carriers, is investigated by means of time-resolved photoluminescence.
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