The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at Gamma is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed
Gatti, E., Giorgioni, A., Grilli, E., Guzzi, M., Chrastina, D., Isella, G., et al. (2013). Relaxation and recombination processes in Ge/SiGe multiple quantum wells. In PHYSICS OF SEMICONDUCTORS (pp.470-471) [10.1063/1.4848489].
Relaxation and recombination processes in Ge/SiGe multiple quantum wells
GATTI, ELEONORA;GIORGIONI, ANNA;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
2013
Abstract
The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at Gamma is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed
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