We report on the observation of room temperature direct band gap photoluminescence in compressively strained-Ge multiple quantum wells with Ge-rich SiGe barriers. A detailed experimental study of the temperature dependence of the photoluminescence is carried out from 5 K up to room temperature. We find that the direct gap photoluminescence at room temperature is due to the thermal excitation of carriers from L-type to -type confined states. Room temperature photoluminescence shows that Ge/SiGe multiple quantum wells are promising candidates for efficient light emitting devices monolithically integrated on Si. © 2011 American Institute of Physics.
Gatti, E., Grilli, E.E., Guzzi, M., Chrastina, D., Isella, D., & von Känel, H. (2011). Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers. APPLIED PHYSICS LETTERS, 98(3), 031106 [10.1063/1.3541782].
Citazione: | Gatti, E., Grilli, E.E., Guzzi, M., Chrastina, D., Isella, D., & von Känel, H. (2011). Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers. APPLIED PHYSICS LETTERS, 98(3), 031106 [10.1063/1.3541782]. | |
Tipo: | Articolo in rivista - Articolo scientifico | |
Carattere della pubblicazione: | Scientifica | |
Presenza di un coautore afferente ad Istituzioni straniere: | No | |
Titolo: | Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers | |
Autori: | Gatti, E; Grilli, EE; Guzzi, M; Chrastina, D; Isella, D; von Känel, H | |
Autori: | ||
Data di pubblicazione: | 2011 | |
Lingua: | English | |
Rivista: | APPLIED PHYSICS LETTERS | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.3541782 | |
Appare nelle tipologie: | 01 - Articolo su rivista |