We have investigated in detail the dependence of the photoluminescence decay times in stacked quantum dot (QD) structures, showing that they strongly depend on the emission energy. We propose that the dispersion of the lifetimes has to be related to the presence of vertical disorder in the quantum dot column. Due to the disorder the energy distribution of the carrier extended states shrinks and localized states are created in the tails. This idea is supported by a theoretical model, which takes into account the presence of a vertical disorder along the QD columns. (C) 2003 American Institute of Physics.
Gurioli, M., Sanguinetti, S., Grilli, E., Guzzi, M., Taddei, S., Vinattieri, A., et al. (2003). Disorder-induced localized states in InAs/GaAs multilayer quantum dots. APPLIED PHYSICS LETTERS, 83(11), 2262-2264 [10.1063/1.1609652].
Disorder-induced localized states in InAs/GaAs multilayer quantum dots
SANGUINETTI, STEFANO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
2003
Abstract
We have investigated in detail the dependence of the photoluminescence decay times in stacked quantum dot (QD) structures, showing that they strongly depend on the emission energy. We propose that the dispersion of the lifetimes has to be related to the presence of vertical disorder in the quantum dot column. Due to the disorder the energy distribution of the carrier extended states shrinks and localized states are created in the tails. This idea is supported by a theoretical model, which takes into account the presence of a vertical disorder along the QD columns. (C) 2003 American Institute of Physics.
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