The effects of hydrogen incorporation on carrier relaxation and recombination efficiencies in a large series of InAs self-assembled quantum dot structures deposited on InGaAs lower confining layers with different thicknesses and compositions have been addressed. With increasing H dose we observe an improvement in the radiative efficiency. By comparing steady state and time resolved photoluminescence measurements, it is established that the H passivation does not enhance the relaxation and capture efficiencies, but instead directly improves the emission yield from carriers in the dots. We therefore conclude that the H-passivated defects are located nearby, or even inside, the dots.
Gurioli, M., Zamfirescu, M., Vinattieri, A., Sanguinetti, S., Grilli, E., Guzzi, M., et al. (2006). Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures. JOURNAL OF APPLIED PHYSICS, 100(8), 084313 [10.1063/1.2358397].
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures
SANGUINETTI, STEFANO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
2006-10
Abstract
The effects of hydrogen incorporation on carrier relaxation and recombination efficiencies in a large series of InAs self-assembled quantum dot structures deposited on InGaAs lower confining layers with different thicknesses and compositions have been addressed. With increasing H dose we observe an improvement in the radiative efficiency. By comparing steady state and time resolved photoluminescence measurements, it is established that the H passivation does not enhance the relaxation and capture efficiencies, but instead directly improves the emission yield from carriers in the dots. We therefore conclude that the H-passivated defects are located nearby, or even inside, the dots.
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