Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An s p3 d5 s tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators. © 2008 The American Physical Society.

Bonfanti, M., Virgilio, M., Chrastina, D., Isella, G., Grilli, E., Guzzi, M., et al. (2008). Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 78, 041407 [10.1103/PhysRevB.78.041407].

Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

BONFANTI, MATTEO;GRILLI, EMANUELE ENRICO;GUZZI, MARIO;
2008

Abstract

Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An s p3 d5 s tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators. © 2008 The American Physical Society.
Articolo in rivista - Articolo scientifico
Spectroscopy, semiconductors, quantum structures
English
041407
Bonfanti, M., Virgilio, M., Chrastina, D., Isella, G., Grilli, E., Guzzi, M., et al. (2008). Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 78, 041407 [10.1103/PhysRevB.78.041407].
Bonfanti, M; Virgilio, M; Chrastina, D; Isella, G; Grilli, E; Guzzi, M; Grosso, G; Neels, A; von Känel, H
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/4488
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