Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An s p3 d5 s tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators. © 2008 The American Physical Society.
Bonfanti, M., Virgilio, M., Chrastina, D., Isella, G., Grilli, E., Guzzi, M., et al. (2008). Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 78, 041407.
Citazione: | Bonfanti, M., Virgilio, M., Chrastina, D., Isella, G., Grilli, E., Guzzi, M., et al. (2008). Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 78, 041407. |
Tipo: | Articolo in rivista - Articolo scientifico |
Carattere della pubblicazione: | Scientifica |
Titolo: | Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers |
Autori: | Bonfanti, M; Virgilio, M; Chrastina, D; Isella, G; Grilli, E; Guzzi, M; Grosso, G; Neels, A; von Känel, H |
Autori: | |
Data di pubblicazione: | 2008 |
Lingua: | English |
Rivista: | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevB.78.041407 |
Appare nelle tipologie: | 01 - Articolo su rivista |