GRILLI, EMANUELE ENRICO
 Distribuzione geografica
Continente #
NA - Nord America 14.529
AS - Asia 6.799
EU - Europa 6.072
SA - Sud America 846
AF - Africa 161
OC - Oceania 11
Continente sconosciuto - Info sul continente non disponibili 5
Totale 28.423
Nazione #
US - Stati Uniti d'America 13.658
SG - Singapore 2.527
CN - Cina 1.644
DE - Germania 957
IT - Italia 922
SE - Svezia 868
RU - Federazione Russa 807
CA - Canada 792
HK - Hong Kong 780
VN - Vietnam 760
IE - Irlanda 628
BR - Brasile 626
UA - Ucraina 582
GB - Regno Unito 447
IN - India 257
FR - Francia 251
FI - Finlandia 181
KR - Corea 169
AT - Austria 137
BD - Bangladesh 101
IQ - Iraq 88
AR - Argentina 84
NL - Olanda 75
TR - Turchia 68
JP - Giappone 60
PK - Pakistan 51
PL - Polonia 45
SA - Arabia Saudita 45
PH - Filippine 43
DK - Danimarca 40
MX - Messico 39
BE - Belgio 38
MA - Marocco 38
ZA - Sudafrica 38
ID - Indonesia 34
CO - Colombia 31
EC - Ecuador 30
ES - Italia 29
UZ - Uzbekistan 27
KE - Kenya 21
VE - Venezuela 19
MY - Malesia 17
CL - Cile 16
PY - Paraguay 14
DZ - Algeria 13
EG - Egitto 13
NP - Nepal 13
TN - Tunisia 13
AE - Emirati Arabi Uniti 12
TW - Taiwan 12
IR - Iran 11
JM - Giamaica 10
JO - Giordania 10
CH - Svizzera 9
TH - Thailandia 9
UY - Uruguay 9
AZ - Azerbaigian 8
IL - Israele 8
LT - Lituania 8
PE - Perù 8
AU - Australia 7
BO - Bolivia 7
CR - Costa Rica 7
RO - Romania 7
LB - Libano 6
MU - Mauritius 6
OM - Oman 6
PA - Panama 6
PS - Palestinian Territory 6
CZ - Repubblica Ceca 5
ET - Etiopia 5
HU - Ungheria 5
LV - Lettonia 5
BG - Bulgaria 4
HR - Croazia 4
KZ - Kazakistan 4
NZ - Nuova Zelanda 4
RS - Serbia 4
BB - Barbados 3
HN - Honduras 3
KG - Kirghizistan 3
MM - Myanmar 3
MN - Mongolia 3
SN - Senegal 3
TT - Trinidad e Tobago 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AL - Albania 2
AO - Angola 2
BA - Bosnia-Erzegovina 2
BH - Bahrain 2
BN - Brunei Darussalam 2
CI - Costa d'Avorio 2
DO - Repubblica Dominicana 2
EU - Europa 2
GR - Grecia 2
GT - Guatemala 2
GY - Guiana 2
KW - Kuwait 2
LU - Lussemburgo 2
LY - Libia 2
Totale 28.399
Città #
Ann Arbor 1.496
Singapore 1.483
Ashburn 1.356
Woodbridge 1.305
Fairfield 947
Chandler 845
Hong Kong 765
Houston 746
San Jose 711
Jacksonville 659
Toronto 610
Dublin 607
Frankfurt am Main 491
Santa Clara 373
Seattle 372
Cambridge 363
New York 363
Wilmington 360
Dearborn 346
Milan 337
Beijing 243
Dallas 241
Hefei 236
Princeton 228
Chicago 159
Seoul 159
Los Angeles 158
Nanjing 149
Hanoi 144
Shanghai 144
Dong Ket 139
Ho Chi Minh City 138
The Dalles 132
Vienna 131
Council Bluffs 108
Lachine 108
Lauterbourg 101
Lawrence 88
Altamura 82
Buffalo 80
Boardman 78
Rome 62
Andover 59
Munich 56
Moscow 54
San Diego 51
Guangzhou 49
Southend 48
Nanchang 47
São Paulo 47
Helsinki 45
Philadelphia 43
Baghdad 38
Shenyang 38
Brussels 36
Hebei 35
Changsha 34
Brooklyn 33
Jinan 31
Huizen 30
London 30
Orem 30
Falls Church 27
Haiphong 25
Norwalk 25
Jiaxing 24
Montreal 24
Mountain View 24
Tokyo 24
Tashkent 23
Tianjin 23
Da Nang 22
Phoenix 22
Turku 22
Amsterdam 20
Dhaka 19
Johannesburg 19
Ottawa 19
Warsaw 19
Washington 19
Atlanta 18
Chennai 18
Hangzhou 18
Mumbai 18
Nairobi 18
New Delhi 18
Nürnberg 18
Redondo Beach 18
Boston 16
Columbus 16
Denver 16
Kent 16
Kraków 16
Riyadh 16
San Francisco 16
Kunming 15
Lahore 15
Basingstoke 13
Brasília 13
Düsseldorf 13
Totale 19.202
Nome #
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 433
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 362
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 353
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 340
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 339
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 337
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 334
Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications 332
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 321
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 312
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells 312
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 308
Optical Orientation of Spins in Ge/SiGe Multiple Quantum Wells grown (111) Si Substrate 308
Long-lived conduction electron spins in Ge quantum wells 307
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 304
Optical spin injection and spin lifetime in Ge heterostructures 302
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 300
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 297
Optical spin injection and spin lifetime in Ge heterostructures 297
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 296
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 291
Raman efficiency in SiGe alloys 291
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 286
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 285
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 284
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 282
Characterization Studies of Purified HgI2 Precursors 280
Valley-dependent spin polarization and long-lived electron spins in germanium 277
Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells 277
Thermal tunability of monolithic polymer microcavities 272
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 272
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 270
Dislocation recombination and surface passivation of Ge micro-crystals on Si 270
Self-aggregation of InAs quantum dots on (N11) GaAs substrates 269
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 269
Photoluminescence circular dichroism and spin polarization in Germanium 268
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 267
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 267
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 266
Quantum confinement by an order-disorder boundary in nanocrystalline silicon 264
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 263
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 263
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 261
Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties 261
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 260
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 260
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 260
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 259
Phonon strain shift coefficients in SixGe1-x alloys 259
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 259
Raman Spectroscopy of Si1-xGex Epilayers 258
Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si 255
Self-Assembly of Quantum Dot-Disk Nanostructures via Growth Kinetics Control 253
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 252
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: The (311)A case 251
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 251
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 250
Direct gap related optical transitions in Ge/SiGe quantum wells 250
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 249
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 248
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 247
Emission lineshape in strain free quantum dot 246
InAs quantum dots grown on nonconventionally oriented GaAs substrates 244
Fabrication of Ge-on-Si substrates for the integration of high-quality GaAs nanostructures on Si 242
Optical spin injection in SiGe heterostructures 241
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 240
Optical spin orientation in SiGe heterostructures 240
Determination of Raman Efficiency in SiGe Alloys 239
Structural investigations of the α12 Si-Ge superstructure 239
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 237
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 236
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 236
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 236
Spin-resolved study of direct band-gap recombination in bulk Ge 235
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 234
Nonlinear Behavior of Josephson Traveling Wave Parametric Amplifiers 232
Ge Crystals on Si Show Their Light 232
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 231
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 230
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 227
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 221
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 221
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 220
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 219
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 216
Luminescence from beta-FeSi2 precipitates in Si. I. Morphology and epitaxial relationship 214
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 212
Robust optical orientation of spins in Ge/SiGe quantum wells 212
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 210
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 209
Radiative recombination and optical spin orientation in GeSn epitaxial layers 207
Strain-induced shift of phonon modes in Si1-xGex alloys 206
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 206
3D island nucleation behaviour on high index substrates 206
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 205
Ge/SiGe multiple quantum wells on high index Si substrates 203
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 202
Temperature dependence of the photoluminescence of single GaAs/AlGaAs concentric quantum ring structure 202
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 202
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 199
Totale 26.059
Categoria #
all - tutte 90.555
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 90.555


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021338 0 0 0 0 0 0 0 0 0 0 0 338
2021/20221.384 34 130 281 92 75 86 78 69 83 113 96 247
2022/20232.835 270 834 287 315 200 424 28 132 196 11 94 44
2023/20241.740 57 55 75 47 243 527 363 46 113 16 19 179
2024/20253.618 190 409 196 149 269 207 103 227 268 644 241 715
2025/20269.256 937 717 728 836 867 438 1.260 450 865 778 760 620
Totale 28.755