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GRILLI, EMANUELE ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 12.232
EU - Europa 5.401
AS - Asia 5.229
SA - Sud America 636
AF - Africa 76
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 5
Totale 23.587
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Nazione #
US - Stati Uniti d'America 11.977
SG - Singapore 2.009
CN - Cina 1.513
DE - Germania 938
SE - Svezia 866
RU - Federazione Russa 795
HK - Hong Kong 741
IE - Irlanda 624
UA - Ucraina 574
BR - Brasile 522
IT - Italia 511
VN - Vietnam 423
GB - Regno Unito 411
CA - Canada 202
FI - Finlandia 172
IN - India 136
AT - Austria 135
FR - Francia 131
KR - Corea 131
NL - Olanda 61
AR - Argentina 48
JP - Giappone 47
PL - Polonia 41
DK - Danimarca 39
TR - Turchia 38
BD - Bangladesh 36
BE - Belgio 36
MX - Messico 33
IQ - Iraq 28
ZA - Sudafrica 23
ES - Italia 18
ID - Indonesia 18
EC - Ecuador 16
KE - Kenya 16
MA - Marocco 16
UZ - Uzbekistan 13
PY - Paraguay 12
SA - Arabia Saudita 12
CO - Colombia 11
IR - Iran 11
TW - Taiwan 10
AE - Emirati Arabi Uniti 8
PH - Filippine 8
VE - Venezuela 8
CH - Svizzera 7
LT - Lituania 7
PK - Pakistan 7
AZ - Azerbaigian 6
CL - Cile 6
MY - Malesia 6
PE - Perù 6
TN - Tunisia 6
AU - Australia 5
EG - Egitto 5
JM - Giamaica 5
LV - Lettonia 5
NP - Nepal 5
RO - Romania 5
CZ - Repubblica Ceca 4
HU - Ungheria 4
IL - Israele 4
MU - Mauritius 4
PA - Panama 4
UY - Uruguay 4
BB - Barbados 3
BG - Bulgaria 3
BO - Bolivia 3
HR - Croazia 3
JO - Giordania 3
KZ - Kazakistan 3
NZ - Nuova Zelanda 3
OM - Oman 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AO - Angola 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
EU - Europa 2
GR - Grecia 2
HN - Honduras 2
LU - Lussemburgo 2
TH - Thailandia 2
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BN - Brunei Darussalam 1
CR - Costa Rica 1
EE - Estonia 1
ET - Etiopia 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
LK - Sri Lanka 1
MD - Moldavia 1
MK - Macedonia 1
MN - Mongolia 1
NO - Norvegia 1
PS - Palestinian Territory 1
PT - Portogallo 1
RS - Serbia 1
SN - Senegal 1
SV - El Salvador 1
Totale 23.584
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Città #
Ann Arbor 1.496
Woodbridge 1.305
Singapore 1.175
Ashburn 1.017
Fairfield 947
Chandler 845
Houston 744
Hong Kong 737
Jacksonville 658
Dublin 603
Frankfurt am Main 478
Seattle 372
Cambridge 363
Wilmington 360
Santa Clara 356
Dearborn 346
New York 346
Beijing 237
Hefei 236
Princeton 228
Dallas 220
Milan 166
Nanjing 149
Dong Ket 139
Shanghai 138
Vienna 129
Los Angeles 123
Seoul 123
Lachine 108
Lawrence 88
Altamura 82
Council Bluffs 80
Boardman 76
Buffalo 72
Andover 59
Munich 56
Ho Chi Minh City 54
Moscow 53
The Dalles 52
San Diego 50
Hanoi 48
Southend 48
Nanchang 47
Guangzhou 45
São Paulo 43
Chicago 41
Shenyang 38
Toronto 37
Helsinki 36
Philadelphia 36
Brussels 35
Hebei 35
Changsha 33
Huizen 30
Jinan 30
Brooklyn 29
London 28
Falls Church 27
Norwalk 25
Jiaxing 24
Mountain View 24
Tianjin 22
Turku 22
Tokyo 19
Montreal 18
Nürnberg 18
Redondo Beach 18
Warsaw 18
Ottawa 17
Phoenix 17
Hangzhou 16
Kent 16
Kraków 16
Boston 14
Denver 14
Kunming 14
Nairobi 14
San Francisco 14
Dhaka 13
Düsseldorf 13
Rio de Janeiro 13
Atlanta 12
Baghdad 12
Johannesburg 12
Salt Lake City 12
Washington 12
Amsterdam 11
Columbus 11
Curitiba 11
Fremont 11
San Mateo 11
Tashkent 11
Ankara 10
Auburn Hills 10
Belo Horizonte 10
Haiphong 10
Redmond 10
Zhengzhou 10
Brasília 9
Caxias do Sul 9
Totale 16.135
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Nome #
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 382
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 292
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 289
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 288
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 288
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 285
Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications 277
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 269
Optical Orientation of Spins in Ge/SiGe Multiple Quantum Wells grown (111) Si Substrate 269
Optical spin injection and spin lifetime in Ge heterostructures 268
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 263
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 262
Optical spin injection and spin lifetime in Ge heterostructures 260
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 259
Long-lived conduction electron spins in Ge quantum wells 258
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells 254
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 253
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 252
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 251
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 251
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 249
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 240
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 240
Characterization Studies of Purified HgI2 Precursors 234
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 234
Raman efficiency in SiGe alloys 233
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 233
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 232
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 231
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 230
Valley-dependent spin polarization and long-lived electron spins in germanium 230
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 229
Self-aggregation of InAs quantum dots on (N11) GaAs substrates 228
Raman Spectroscopy of Si1-xGex Epilayers 226
Photoluminescence circular dichroism and spin polarization in Germanium 226
Phonon strain shift coefficients in SixGe1-x alloys 224
Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties 223
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 222
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 221
Thermal tunability of monolithic polymer microcavities 220
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 220
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 220
Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells 220
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 219
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 218
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 218
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 217
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 216
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 216
Fabrication of Ge-on-Si substrates for the integration of high-quality GaAs nanostructures on Si 216
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: The (311)A case 214
Direct gap related optical transitions in Ge/SiGe quantum wells 213
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 212
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 211
Optical spin injection in SiGe heterostructures 211
Quantum confinement by an order-disorder boundary in nanocrystalline silicon 210
Self-Assembly of Quantum Dot-Disk Nanostructures via Growth Kinetics Control 209
Emission lineshape in strain free quantum dot 208
Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si 207
Dislocation recombination and surface passivation of Ge micro-crystals on Si 207
Structural investigations of the α12 Si-Ge superstructure 207
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 205
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 205
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 205
InAs quantum dots grown on nonconventionally oriented GaAs substrates 204
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 200
Determination of Raman Efficiency in SiGe Alloys 199
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 198
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 197
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 197
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 196
Optical spin orientation in SiGe heterostructures 195
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 194
Ge Crystals on Si Show Their Light 194
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 193
Spin-resolved study of direct band-gap recombination in bulk Ge 193
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 186
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 185
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 184
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 179
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 179
Luminescence from beta-FeSi2 precipitates in Si. I. Morphology and epitaxial relationship 178
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 178
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 178
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 177
Nonlinear Behavior of Josephson Traveling Wave Parametric Amplifiers 176
3D island nucleation behaviour on high index substrates 176
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 176
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 176
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 175
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 172
Robust optical orientation of spins in Ge/SiGe quantum wells 172
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 171
Strain-induced shift of phonon modes in Si1-xGex alloys 170
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 170
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 169
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 167
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 167
Radiative recombination and optical spin orientation in GeSn epitaxial layers 166
Ge/SiGe multiple quantum wells on high index Si substrates 162
Totale 21.728
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Categoria #
all - tutte 78.769
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 78.769
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.159 0 0 0 0 0 140 133 108 125 236 79 338
2021/20221.384 34 130 281 92 75 86 78 69 83 113 96 247
2022/20232.835 270 834 287 315 200 424 28 132 196 11 94 44
2023/20241.740 57 55 75 47 243 527 363 46 113 16 19 179
2024/20253.618 190 409 196 149 269 207 103 227 268 644 241 715
2025/20264.420 937 717 728 836 867 335 0 0 0 0 0 0
Totale 23.919