Bicocca Open Archive

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GRILLI, EMANUELE ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 10.900
EU - Europa 5.158
AS - Asia 2.271
SA - Sud America 88
AF - Africa 23
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 4
Totale 18.452
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Nazione #
US - Stati Uniti d'America 10.721
DE - Germania 889
SE - Svezia 859
SG - Singapore 804
RU - Federazione Russa 787
CN - Cina 761
IE - Irlanda 622
UA - Ucraina 564
IT - Italia 487
GB - Regno Unito 371
HK - Hong Kong 250
VN - Vietnam 237
CA - Canada 169
FI - Finlandia 152
AT - Austria 134
FR - Francia 97
IN - India 94
BR - Brasile 72
NL - Olanda 56
DK - Danimarca 39
BE - Belgio 35
JP - Giappone 29
TR - Turchia 26
PL - Polonia 20
IR - Iran 11
ID - Indonesia 8
KR - Corea 8
TW - Taiwan 8
MA - Marocco 7
CH - Svizzera 6
IQ - Iraq 6
ZA - Sudafrica 6
AR - Argentina 5
AU - Australia 5
LV - Lettonia 5
CZ - Repubblica Ceca 4
ES - Italia 4
LT - Lituania 4
MU - Mauritius 4
PE - Perù 4
RO - Romania 4
BG - Bulgaria 3
CL - Cile 3
EG - Egitto 3
HR - Croazia 3
HU - Ungheria 3
IL - Israele 3
JM - Giamaica 3
MX - Messico 3
MY - Malesia 3
NZ - Nuova Zelanda 3
PA - Panama 3
PH - Filippine 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AZ - Azerbaigian 2
CO - Colombia 2
EU - Europa 2
GR - Grecia 2
KZ - Kazakistan 2
LU - Lussemburgo 2
NP - Nepal 2
PK - Pakistan 2
SA - Arabia Saudita 2
TH - Thailandia 2
TN - Tunisia 2
UZ - Uzbekistan 2
AM - Armenia 1
BD - Bangladesh 1
BN - Brunei Darussalam 1
CR - Costa Rica 1
EC - Ecuador 1
EE - Estonia 1
KE - Kenya 1
LK - Sri Lanka 1
MD - Moldavia 1
MK - Macedonia 1
MN - Mongolia 1
NO - Norvegia 1
OM - Oman 1
PT - Portogallo 1
RS - Serbia 1
UY - Uruguay 1
Totale 18.452
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Città #
Ann Arbor 1.496
Woodbridge 1.305
Fairfield 947
Chandler 845
Houston 737
Ashburn 679
Jacksonville 658
Dublin 602
Singapore 557
Frankfurt am Main 470
Seattle 370
Cambridge 363
Wilmington 360
Dearborn 346
Santa Clara 343
New York 316
Hong Kong 246
Princeton 228
Milan 150
Nanjing 149
Dong Ket 139
Shanghai 131
Vienna 129
Lachine 108
Beijing 91
Lawrence 88
Altamura 82
Council Bluffs 78
Boardman 76
Andover 59
Moscow 52
San Diego 50
Southend 48
Nanchang 46
Shenyang 38
Helsinki 36
Brussels 35
Guangzhou 35
Hebei 35
Philadelphia 35
Hefei 34
Toronto 32
Huizen 30
Jinan 29
Los Angeles 28
Falls Church 27
Changsha 25
Norwalk 25
Jiaxing 24
London 24
Mountain View 24
Nürnberg 18
Tianjin 18
Munich 17
Ottawa 17
Kraków 16
Hangzhou 14
Kunming 14
Düsseldorf 13
Fremont 11
San Mateo 11
Auburn Hills 10
Redmond 10
Zhengzhou 9
São Paulo 8
The Dalles 8
Tokyo 8
Washington 8
Chicago 7
Dallas 7
Edmonton 7
Orsay 7
Amsterdam 6
Ningbo 6
Phoenix 6
Portsmouth 6
Pune 6
Rome 6
Taipei 6
Tétouan 6
University Park 6
Boston 5
Brooklyn 5
Hanoi 5
Hounslow 5
Jakarta 5
Kilburn 5
Lanzhou 5
Nuremberg 5
Rho 5
Riga 5
Zurich 5
Acton 4
Berlin 4
Cremona 4
Lauterbourg 4
Leawood 4
Lima region 4
Loreto 4
San Francisco 4
Totale 13.239
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Nome #
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 323
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 237
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 233
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 229
Optical spin injection and spin lifetime in Ge heterostructures 228
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 224
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 221
Optical spin injection and spin lifetime in Ge heterostructures 220
Optical Orientation of Spins in Ge/SiGe Multiple Quantum Wells grown (111) Si Substrate 218
Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications 216
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 214
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 212
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 211
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 209
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 203
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 203
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 202
Long-lived conduction electron spins in Ge quantum wells 195
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells 194
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 192
Characterization Studies of Purified HgI2 Precursors 191
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 191
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 191
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 189
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 188
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 187
Raman Spectroscopy of Si1-xGex Epilayers 186
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 185
Phonon strain shift coefficients in SixGe1-x alloys 183
Fabrication of Ge-on-Si substrates for the integration of high-quality GaAs nanostructures on Si 183
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 180
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 180
Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties 180
Optical spin injection in SiGe heterostructures 179
Self-Aggregation of InAs Quantum Dots on (N11) GaAs Substrates 178
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 178
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 178
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 178
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case 177
Thermal tunability of monolithic polymer microcavities 175
Direct gap related optical transitions in Ge/SiGe quantum wells 175
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 174
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 173
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 173
Emission lineshape in strain free quantum dot 172
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 172
Valley-dependent spin polarization and long-lived electron spins in germanium 172
Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells 172
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 170
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 170
Quantum confinement by an order-disorder boundary in nanocrystalline silicon 170
Raman efficiency in SiGe alloys 164
Self-Assembly of Quantum Dot-Disk Nanostructures via Growth Kinetics Control 163
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 162
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 162
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 162
Structural investigations of the α12 Si-Ge superstructure 162
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 161
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 160
Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si 159
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 158
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 156
InAs quantum dots grown on nonconventionally oriented GaAs substrates 156
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 156
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 156
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 156
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 155
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 155
Ge Crystals on Si Show Their Light 155
Optical spin orientation in SiGe heterostructures 155
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 153
Determination of Raman Efficiency in SiGe Alloys 153
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 152
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 151
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 150
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 150
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 148
Dislocation recombination and surface passivation of Ge micro-crystals on Si 148
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 147
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 146
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 144
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 144
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 144
Spin-resolved study of direct band-gap recombination in bulk Ge 144
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 142
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 142
3D island nucleation behaviour on high index substrates 140
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 139
Photoluminescence circular dichroism and spin polarization in Germanium 139
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 138
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 137
Robust optical orientation of spins in Ge/SiGe quantum wells 137
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 135
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 134
Luminescence from beta-FeSi2 precipitates in Si. I. Morphology and epitaxial relationship 133
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 132
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 129
Strain-induced shift of phonon modes in Si1-xGex alloys 125
Competition in the carrier capture between InGaAs/AlGaAs quantum dots and deep point defects 125
Polarization-dependent absorption in Ge/SiGe multiple quantum wells : theory and experiments 125
Totale 17.173
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Categoria #
all - tutte 65.101
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 65.101
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020235 0 0 0 0 0 0 0 0 0 0 166 69
2020/20211.908 127 103 181 211 127 140 133 108 125 236 79 338
2021/20221.384 34 130 281 92 75 86 78 69 83 113 96 247
2022/20232.835 270 834 287 315 200 424 28 132 196 11 94 44
2023/20241.740 57 55 75 47 243 527 363 46 113 16 19 179
2024/20252.903 190 409 196 149 269 207 103 227 268 644 241 0
Totale 18.784