Bicocca Open Archive

Logo unimib boa
GRILLI, EMANUELE ENRICO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 10.461
EU - Europa 4.609
AS - Asia 1.840
AF - Africa 12
OC - Oceania 7
SA - Sud America 6
Continente sconosciuto - Info sul continente non disponibili 4
Totale 16.939
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 10.296
SE - Svezia 855
DE - Germania 825
CN - Cina 698
IE - Irlanda 620
UA - Ucraina 555
SG - Singapore 543
IT - Italia 483
RU - Federazione Russa 388
GB - Regno Unito 355
VN - Vietnam 237
HK - Hong Kong 174
CA - Canada 164
FI - Finlandia 147
AT - Austria 132
IN - India 91
FR - Francia 82
NL - Olanda 50
DK - Danimarca 39
BE - Belgio 34
TR - Turchia 24
JP - Giappone 23
PL - Polonia 17
IR - Iran 11
KR - Corea 8
TW - Taiwan 8
ID - Indonesia 6
MA - Marocco 6
AU - Australia 5
CH - Svizzera 4
LT - Lituania 4
MU - Mauritius 4
BR - Brasile 3
MY - Malesia 3
RO - Romania 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BG - Bulgaria 2
CL - Cile 2
CZ - Repubblica Ceca 2
ES - Italia 2
EU - Europa 2
GR - Grecia 2
HR - Croazia 2
HU - Ungheria 2
IL - Israele 2
NZ - Nuova Zelanda 2
PH - Filippine 2
TH - Thailandia 2
TN - Tunisia 2
BN - Brunei Darussalam 1
EC - Ecuador 1
IQ - Iraq 1
LK - Sri Lanka 1
LU - Lussemburgo 1
MK - Macedonia 1
MN - Mongolia 1
MX - Messico 1
NP - Nepal 1
PK - Pakistan 1
PT - Portogallo 1
RS - Serbia 1
SA - Arabia Saudita 1
UZ - Uzbekistan 1
Totale 16.939
Salva come PNG Salva come JPEG
Città #
Ann Arbor 1.496
Woodbridge 1.305
Fairfield 947
Chandler 845
Houston 737
Jacksonville 658
Dublin 600
Ashburn 532
Frankfurt am Main 460
Singapore 434
Seattle 370
Cambridge 363
Wilmington 360
Dearborn 346
Santa Clara 341
New York 312
Princeton 228
Hong Kong 170
Nanjing 149
Milan 148
Dong Ket 139
Shanghai 131
Vienna 128
Lachine 108
Lawrence 88
Beijing 83
Altamura 82
Boardman 76
Andover 59
San Diego 50
Southend 48
Nanchang 46
Shenyang 37
Hebei 35
Philadelphia 35
Brussels 34
Helsinki 34
Toronto 31
Huizen 30
Jinan 28
Falls Church 27
Changsha 25
Norwalk 25
Jiaxing 24
Mountain View 24
London 21
Los Angeles 21
Guangzhou 20
Nürnberg 18
Tianjin 18
Ottawa 17
Kraków 16
Hangzhou 14
Munich 13
Kunming 12
Fremont 11
San Mateo 11
Auburn Hills 10
Redmond 10
Hefei 9
Zhengzhou 9
Washington 8
Dallas 7
Edmonton 7
Orsay 7
Ningbo 6
Pune 6
Rome 6
Taipei 6
Tétouan 6
University Park 6
Amsterdam 5
Chicago 5
Hanoi 5
Hounslow 5
Jakarta 5
Kilburn 5
Lanzhou 5
Rho 5
Acton 4
Berlin 4
Cremona 4
Leawood 4
Loreto 4
Phoenix 4
Taizhou 4
Tappahannock 4
Wuhan 4
Zurich 4
Bovezzo 3
Central District 3
Changchun 3
Chiswick 3
Detroit 3
Florence 3
Fuzhou 3
Gif-sur-yvette 3
Lappeenranta 3
Laurel 3
Prescot 3
Totale 12.636
Salva come PNG Salva come JPEG
Nome #
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 304
Optical spin injection and spin lifetime in Ge heterostructures 219
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 218
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 218
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 213
Optical spin injection and spin lifetime in Ge heterostructures 210
Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications 209
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 204
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 203
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 202
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 198
Optical Orientation of Spins in Ge/SiGe Multiple Quantum Wells grown (111) Si Substrate 198
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 197
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 187
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 187
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 185
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 184
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 183
Characterization Studies of Purified HgI2 Precursors 182
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 180
Raman Spectroscopy of Si1-xGex Epilayers 179
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 177
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 177
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 175
Fabrication of Ge-on-Si substrates for the integration of high-quality GaAs nanostructures on Si 172
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 171
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 171
Phonon strain shift coefficients in SixGe1-x alloys 171
Self-Aggregation of InAs Quantum Dots on (N11) GaAs Substrates 170
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 170
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells 170
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 169
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 169
Optical spin injection in SiGe heterostructures 168
Long-lived conduction electron spins in Ge quantum wells 168
Thermal tunability of monolithic polymer microcavities 167
Direct gap related optical transitions in Ge/SiGe quantum wells 167
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 167
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case 165
Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties 164
Emission lineshape in strain free quantum dot 163
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 160
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 159
Quantum confinement by an order-disorder boundary in nanocrystalline silicon 159
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 158
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 158
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 157
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 152
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 152
Self-Assembly of Quantum Dot-Disk Nanostructures via Growth Kinetics Control 152
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 152
Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells 151
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 150
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 149
Raman efficiency in SiGe alloys 149
Valley-dependent spin polarization and long-lived electron spins in germanium 149
Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si 147
Structural investigations of the α12 Si-Ge superstructure 147
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 145
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 145
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 145
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 144
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 144
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 143
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 143
InAs quantum dots grown on nonconventionally oriented GaAs substrates 143
Optical spin orientation in SiGe heterostructures 143
Determination of Raman Efficiency in SiGe Alloys 142
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 142
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 141
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 141
Ge Crystals on Si Show Their Light 141
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 139
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 138
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 138
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 137
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 137
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 135
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 135
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 134
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 134
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 133
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 133
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 132
Dislocation recombination and surface passivation of Ge micro-crystals on Si 132
3D island nucleation behaviour on high index substrates 130
Robust optical orientation of spins in Ge/SiGe quantum wells 130
Spin-resolved study of direct band-gap recombination in bulk Ge 130
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 129
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 128
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 127
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 123
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 121
Photoluminescence circular dichroism and spin polarization in Germanium 120
Luminescence from beta-FeSi2 precipitates in Si. I. Morphology and epitaxial relationship 119
Polarization-dependent absorption in Ge/SiGe multiple quantum wells : theory and experiments 117
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 117
Strain-induced shift of phonon modes in Si1-xGex alloys 116
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures 116
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 116
Totale 15.850
Salva come PNG Salva come JPEG
Categoria #
all - tutte 56.123
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 56.123
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.633 0 0 0 0 0 354 408 191 273 172 166 69
2020/20211.908 127 103 181 211 127 140 133 108 125 236 79 338
2021/20221.384 34 130 281 92 75 86 78 69 83 113 96 247
2022/20232.835 270 834 287 315 200 424 28 132 196 11 94 44
2023/20241.740 57 55 75 47 243 527 363 46 113 16 19 179
2024/20251.390 190 409 196 149 269 177 0 0 0 0 0 0
Totale 17.271