Bicocca Open Archive

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GRILLI, EMANUELE ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 10.925
EU - Europa 5.171
AS - Asia 2.765
SA - Sud America 89
AF - Africa 24
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 4
Totale 18.986
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Nazione #
US - Stati Uniti d'America 10.742
DE - Germania 889
SE - Svezia 859
SG - Singapore 805
RU - Federazione Russa 787
CN - Cina 763
HK - Hong Kong 681
IE - Irlanda 622
UA - Ucraina 564
IT - Italia 487
GB - Regno Unito 372
VN - Vietnam 241
CA - Canada 173
FI - Finlandia 163
AT - Austria 134
FR - Francia 97
IN - India 94
BR - Brasile 73
KR - Corea 63
NL - Olanda 56
DK - Danimarca 39
BE - Belgio 35
JP - Giappone 29
TR - Turchia 26
PL - Polonia 20
IR - Iran 11
ID - Indonesia 8
TW - Taiwan 8
IQ - Iraq 7
MA - Marocco 7
ZA - Sudafrica 7
CH - Svizzera 6
AR - Argentina 5
AU - Australia 5
ES - Italia 5
LV - Lettonia 5
CZ - Repubblica Ceca 4
LT - Lituania 4
MU - Mauritius 4
PE - Perù 4
RO - Romania 4
BG - Bulgaria 3
CL - Cile 3
EG - Egitto 3
HR - Croazia 3
HU - Ungheria 3
IL - Israele 3
JM - Giamaica 3
MX - Messico 3
MY - Malesia 3
NZ - Nuova Zelanda 3
PA - Panama 3
PH - Filippine 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AZ - Azerbaigian 2
CO - Colombia 2
EU - Europa 2
GR - Grecia 2
KZ - Kazakistan 2
LU - Lussemburgo 2
NP - Nepal 2
PK - Pakistan 2
SA - Arabia Saudita 2
TH - Thailandia 2
TN - Tunisia 2
UZ - Uzbekistan 2
AM - Armenia 1
BD - Bangladesh 1
BN - Brunei Darussalam 1
CR - Costa Rica 1
EC - Ecuador 1
EE - Estonia 1
KE - Kenya 1
LK - Sri Lanka 1
MD - Moldavia 1
MK - Macedonia 1
MN - Mongolia 1
NO - Norvegia 1
OM - Oman 1
PT - Portogallo 1
RS - Serbia 1
UY - Uruguay 1
Totale 18.986
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Città #
Ann Arbor 1.496
Woodbridge 1.305
Fairfield 947
Chandler 845
Houston 737
Ashburn 683
Hong Kong 677
Jacksonville 658
Dublin 602
Singapore 558
Frankfurt am Main 470
Seattle 370
Cambridge 363
Wilmington 360
Dearborn 346
Santa Clara 343
New York 319
Princeton 228
Milan 150
Nanjing 149
Dong Ket 139
Shanghai 131
Vienna 129
Lachine 108
Beijing 93
Lawrence 88
Altamura 82
Council Bluffs 78
Boardman 76
Andover 59
Seoul 55
Moscow 52
San Diego 50
Southend 48
Nanchang 46
Shenyang 38
Helsinki 36
Brussels 35
Guangzhou 35
Hebei 35
Philadelphia 35
Hefei 34
Toronto 33
Huizen 30
Jinan 29
Los Angeles 29
Falls Church 27
Changsha 25
Norwalk 25
Jiaxing 24
London 24
Mountain View 24
Nürnberg 18
Tianjin 18
Munich 17
Ottawa 17
Kraków 16
Hangzhou 14
Kunming 14
Düsseldorf 13
Turku 13
Fremont 11
San Mateo 11
Auburn Hills 10
Redmond 10
Dallas 9
Washington 9
Zhengzhou 9
Chicago 8
São Paulo 8
The Dalles 8
Tokyo 8
Edmonton 7
Hanoi 7
Orsay 7
Amsterdam 6
Brooklyn 6
Ningbo 6
Phoenix 6
Portsmouth 6
Pune 6
Rome 6
Taipei 6
Tétouan 6
University Park 6
Boston 5
Hounslow 5
Jakarta 5
Kilburn 5
Lanzhou 5
Nuremberg 5
Rho 5
Riga 5
Zurich 5
Acton 4
Berlin 4
Cremona 4
Lauterbourg 4
Leawood 4
Lima region 4
Totale 13.749
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Nome #
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 328
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 242
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 240
THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE OF AMORPHOUS SIO2 233
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 231
Optical spin injection and spin lifetime in Ge heterostructures 230
Optical spin injection and spin lifetime in Ge heterostructures 225
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 224
Optical Orientation of Spins in Ge/SiGe Multiple Quantum Wells grown (111) Si Substrate 222
Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications 219
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 219
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 217
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 216
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 213
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 207
Relaxation and recombination processes in Ge/SiGe multiple quantum wells 206
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 205
Optical Anisotropy in Arrow-Shaped InAs Quantum Dots 200
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells 200
Long-lived conduction electron spins in Ge quantum wells 198
Characterization Studies of Purified HgI2 Precursors 195
Novel Characteristics of Self Assembled InAs Quantum Dots Grown on (311)A GaAs 195
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 195
Room Temperature Photoluminescence of Ge Multiple Quantum Wells with Ge-Rich Barriers 194
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 194
Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer 192
Raman Spectroscopy of Si1-xGex Epilayers 191
The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon 191
Fabrication of Ge-on-Si substrates for the integration of high-quality GaAs nanostructures on Si 187
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 186
Phonon strain shift coefficients in SixGe1-x alloys 186
Self-Aggregation of InAs Quantum Dots on (N11) GaAs Substrates 186
Optical and Morphological Properties of In(Ga)As/GaAs Quantum Dots grown on Novel Index Surfaces 185
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 185
Optical spin injection in SiGe heterostructures 184
Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties 184
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 183
Erbium-doped silicon epilayers grown by liquid-phase epitaxy 182
Thermal tunability of monolithic polymer microcavities 181
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case 181
Intrinsic polarised emission from InAs/GaAs(311)A quantum dots 178
Direct gap related optical transitions in Ge/SiGe quantum wells 178
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells 178
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures 178
Valley-dependent spin polarization and long-lived electron spins in germanium 177
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 177
Emission lineshape in strain free quantum dot 176
Quantum confinement by an order-disorder boundary in nanocrystalline silicon 176
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 175
Photoluminescence decay of direct and indirect transitions in Ge/SiGe multiple quantum wells 175
Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells 175
Raman efficiency in SiGe alloys 170
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures 169
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 168
Structural investigations of the α12 Si-Ge superstructure 168
Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots 167
Self-Assembly of Quantum Dot-Disk Nanostructures via Growth Kinetics Control 167
Tuning by means of laser annealing of electronic and structural properties of nc–Si/a–Si:H 166
Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si 164
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 164
Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence 163
InAs quantum dots grown on nonconventionally oriented GaAs substrates 162
Disorder-induced localized states in InAs/GaAs multilayer quantum dots 161
Photoluminescence and ultrafast inter-subband relaxation in Ge/SiGe multiple quantum wells 161
Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots 160
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots 160
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 160
Piezoelectric Effects in InAs/GaAs(N11) Self-Assembled Quantum Dots 159
Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy 158
Photoluminescence of Self Organized InAs/GaAs Quantum Dots Grown on (N11)B Surfaces 158
Ge Crystals on Si Show Their Light 157
Optical spin orientation in SiGe heterostructures 157
Determination of Raman Efficiency in SiGe Alloys 155
Ultra-fast inter-subband relaxation and non-thermal carrier distribution in Ge/SiGe quantum wells 155
Spin Generation and Relaxation in Ge/SiGe Quantum Wells 154
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 154
Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates 153
Dislocation recombination and surface passivation of Ge micro-crystals on Si 152
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots 151
Study of thermal strain relaxation in GaAs grown on Ge/Si substrates 150
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces 150
Spin-resolved study of direct band-gap recombination in bulk Ge 149
3D island nucleation behaviour on high index substrates 148
Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures 147
Electron-phonon interaction in individual strain-free GaAs Al0.3 Ga0.7 As quantum dots 147
Tuning the Wetting Layer in the InGaAs/AlGaAs Quantum Dots 147
Erratum to 'Raman spectroscopy of Si1−xGex epilayers' [Mater. Sci. Eng. B 124–125 (2005) 127–131] 146
Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates 144
Direct and Indirect Energy Gap Dependence on Al Concentration in AlGaSb (x < 0.41) 143
Photoluminescence circular dichroism and spin polarization in Germanium 143
Robust optical orientation of spins in Ge/SiGe quantum wells 142
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 141
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 141
Resonant Quenching of Photoluminescence in InxGa1-xAs/AlyGa1-yAs/GaAs Self Assembled Quantum Dots 140
Luminescence from beta-FeSi2 precipitates in Si. I. Morphology and epitaxial relationship 139
Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots 137
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 133
Polarization-dependent absorption in Ge/SiGe multiple quantum wells : theory and experiments 132
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures 129
Strain-induced shift of phonon modes in Si1-xGex alloys 128
Totale 17.644
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Categoria #
all - tutte 66.315
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 66.315
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202069 0 0 0 0 0 0 0 0 0 0 0 69
2020/20211.908 127 103 181 211 127 140 133 108 125 236 79 338
2021/20221.384 34 130 281 92 75 86 78 69 83 113 96 247
2022/20232.835 270 834 287 315 200 424 28 132 196 11 94 44
2023/20241.740 57 55 75 47 243 527 363 46 113 16 19 179
2024/20253.437 190 409 196 149 269 207 103 227 268 644 241 534
Totale 19.318