The emission dynamics in GaAs/AlGaAs coupled ring-disk (CRD) quantum structures fabricated on silicon substrates is presented. The CRD structures are self-assembled via droplet epitaxy, a growth technique which, due to its low thermal budget, is compatible with the monolithic integration of III-V devices on Si based electronic circuits. Continuous wave, time resolved photoluminescence and theoretical calculations in the effective mass approximations are presented for the assessment of the electronic and carrier properties of the CRDs. The CRDs show a fast carrier dynamics which is expected to be suitable for ultrafast optical switching applications integrated on silicon.
Cavigli, L., Bietti, S., Abbarchi, M., Somaschini, C., Vinattieri, A., Gurioli, M., et al. (2012). Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si. JOURNAL OF PHYSICS. CONDENSED MATTER, 24(10), 104017-104017 [10.1088/0953-8984/24/10/104017].
Fast emission dynamics in droplet epitaxy GaAs ring-disk nanostructures integrated on Si
BIETTI, SERGIO;SOMASCHINI, CLAUDIO;GRILLI, EMANUELE ENRICO;SANGUINETTI, STEFANO
2012
Abstract
The emission dynamics in GaAs/AlGaAs coupled ring-disk (CRD) quantum structures fabricated on silicon substrates is presented. The CRD structures are self-assembled via droplet epitaxy, a growth technique which, due to its low thermal budget, is compatible with the monolithic integration of III-V devices on Si based electronic circuits. Continuous wave, time resolved photoluminescence and theoretical calculations in the effective mass approximations are presented for the assessment of the electronic and carrier properties of the CRDs. The CRDs show a fast carrier dynamics which is expected to be suitable for ultrafast optical switching applications integrated on silicon.
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