BONERA, EMILIANO
 Distribuzione geografica
Continente #
NA - Nord America 9.028
EU - Europa 3.699
AS - Asia 1.116
Continente sconosciuto - Info sul continente non disponibili 9
AF - Africa 7
SA - Sud America 5
OC - Oceania 4
Totale 13.868
Nazione #
US - Stati Uniti d'America 8.890
DE - Germania 959
IT - Italia 627
CN - Cina 608
SE - Svezia 511
IE - Irlanda 455
UA - Ucraina 361
GB - Regno Unito 259
HK - Hong Kong 175
VN - Vietnam 152
CA - Canada 138
FI - Finlandia 124
AT - Austria 112
IN - India 91
RU - Federazione Russa 55
DK - Danimarca 52
FR - Francia 47
NL - Olanda 46
BE - Belgio 41
TR - Turchia 30
CH - Svizzera 22
JP - Giappone 12
PK - Pakistan 10
EU - Europa 9
KR - Corea 9
CZ - Repubblica Ceca 8
IR - Iran 8
SG - Singapore 8
TW - Taiwan 7
GR - Grecia 6
ES - Italia 5
CI - Costa d'Avorio 4
BR - Brasile 3
NZ - Nuova Zelanda 3
RO - Romania 3
TN - Tunisia 2
AU - Australia 1
BG - Bulgaria 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
CL - Cile 1
HU - Ungheria 1
ID - Indonesia 1
IL - Israele 1
ME - Montenegro 1
MK - Macedonia 1
MY - Malesia 1
PH - Filippine 1
PY - Paraguay 1
RS - Serbia 1
SA - Arabia Saudita 1
SC - Seychelles 1
Totale 13.868
Città #
Ann Arbor 2.712
Woodbridge 1.026
Fairfield 736
Frankfurt am Main 676
Chandler 603
Houston 506
Dublin 434
Jacksonville 432
Ashburn 410
Wilmington 387
Seattle 275
Cambridge 258
Dearborn 227
New York 219
Princeton 193
Hong Kong 174
Milan 171
Nanjing 134
Vienna 106
Shanghai 103
Dong Ket 92
Lawrence 77
Altamura 73
Lachine 72
Beijing 71
Toronto 52
Helsinki 49
San Diego 47
Southend 44
Nanchang 43
Andover 37
Brussels 33
Shenyang 32
Grafing 30
Guangzhou 29
Huizen 26
Rome 26
Boardman 25
Jiaxing 24
London 24
Hebei 23
Jinan 23
Pune 23
Ardea 20
Los Angeles 20
Norwalk 20
Falls Church 17
Tianjin 16
Hangzhou 15
Fremont 14
Sacramento 14
Frankfurt An Der Oder 13
Taizhou 13
Zurich 13
Arcore 12
Brescia 12
Florence 12
Changsha 11
Kunming 11
Mountain View 11
Colle 10
Redmond 9
Zhengzhou 9
Edmonton 8
Elk Grove Village 8
Hefei 8
Leawood 8
Munich 8
Nürnberg 8
Serra 8
Pisa 7
Southampton 7
Washington 7
Auburn Hills 6
Detroit 6
Duncan 6
Eindhoven 6
Hanoi 6
Lanzhou 6
Taipei 6
Chicago 5
Dresden 5
Hounslow 5
Kilburn 5
Leuven 5
Ottawa 5
Pavia 5
Phoenix 5
University Park 5
Abidjan 4
Amsterdam 4
Caserta 4
Chemnitz 4
Daejeon 4
Islamabad 4
Lahore 4
Marburg 4
Ningbo 4
Oakland 4
Philadelphia 4
Totale 11.237
Nome #
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots 341
Thickness determination of anisotropic van der Waals crystals by Raman spectroscopy: the case of black phosphorus 314
Disassembling Silicene from Native Substrate and Transferring onto an Arbitrary Target Substrate 314
Broadband control of the optical properties of semiconductors through site-controlled self-assembly of microcrystals 306
Stability and universal encapsulation of epitaxial Xenes 270
Ambient atmosphere laser-induced local ripening of MoS2 nanoparticles 259
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors 250
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution 224
High-Yield Fabrication of Entangled Photon Emitters for Hybrid Quantum Networking Using High-Temperature Droplet Epitaxy 223
Optical properties of micron-sized crystals grown via 3D heteroepitaxy 223
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 199
Solid-state dewetting dynamics of amorphous ge thin films on silicon dioxide substrates 199
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001) 197
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 196
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 193
Growth Suppression by Metal Droplets of In0.5Ga0.5N/Si(111) at Low Temperatures 192
Raman spectroscopy for the analysis of temperature-dependent plastic relaxation of SiGe layers 191
Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source 184
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 184
High-Yield Fabrication of Entangled Photon Emitters for Hybrid Quantum Networking Using High-Temperature Droplet Epitaxy 182
A Structural Characterization of GaAs MBE Grown on Si Pillars 181
Ordered Arrays of SiGe Islands from Low-Energy PECVD 181
Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations 180
Modelling of the phonon strain shift coefficients in Si 1-x Ge x alloys 180
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 180
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 179
Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy 178
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 175
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 173
Integration of MOSFETs with SiGe dots as stressor material 172
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures 170
Embedding epitaxial (blue) phosphorene in between device-compatible functional layers 167
Raman spectroscopy of epitaxial InGaN/Si in the central composition range 166
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 160
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source 159
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 159
Phonon strain shift coefficients in SixGe1-x alloys 153
Tensile strain in Ge membranes induced by SiGe nanostressors 153
Insights into the C distribution in Si:C/Si:C:P and the annealing behavior of Si:C layers 152
Impact of misfit dislocation on wavefront distortion in Si/SiGe/Si optical waveguides 151
SiGe nano-stressors for Ge strain-engineering 150
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates 148
Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy 147
Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale 143
Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching 142
Excitonic fine structure in GaAs/AlGaAs (111) quantum dots grown by droplet epitaxy 142
Raman efficiency in SiGe alloys 139
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture 138
Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon 134
SiGe nanostructures inducing tensile strain in suspended germanium membranes. 133
EPR and UV-Raman study of BPSG thin films: structure and defects 132
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 131
Strain release management in SiGe/Si films by substrate patterning 130
Crystal defects and junction properties in the evolution of device fabrication technology 129
Lithographically defined low dimensional SiGe nanostripes as silicon stressors 129
Determination of Raman Efficiency in SiGe Alloys 128
Substrate strain manipulation by nanostructure perimeter forces 128
Band alignment at the La2Hf2O7/(001)Si interface 123
Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning 122
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 117
Strain in Si or Ge from the Edge Forces of Epitaxial Nanostructures 117
Addressing spin-optoelectronic properties of Ge by polarization and time-resolved PL investigations 116
Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon 115
Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition 113
Near-field optical imaging of electromigration damages in passivated metal stripes 113
Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals 112
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures 109
Renishaw Application Note : Imaging of silicon stress in microelectronics using Raman spectroscopy 108
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 108
Dielectric properties of high-kappa oxides: Theory and experiment for Lu-2O-3 107
Atomic layer deposition of Lu silicate films using {[(Me3Si)(2)N](3)Lu} 106
Development of a combined confocal and scanning near-field Raman microscope for deep UV laser excitation 105
Monolithic integration of GaAs on deeply patterned Si substrates by self-assembled arrays of three-dimensional microcrystals 105
Structure evolution of atomic layer deposition grown ZrO2 films by deep-ultra-violet Raman and far-infrared spectroscopies 104
Combining high resolution and tensorial analysis in Raman stress measurements of silicon 103
Raman spectroscopy of strain in subwavelength microelectronic devices 102
Phosphorous-oxygen hole centers in phosphosilicate glass films 99
Raman stress maps from finite-element models of silicon structures 99
Local uniaxial tensile deformation of germanium up to the 4% threshold by epitaxial nanostructures 99
Optothermal Raman Spectroscopy of Black Phosphorus on a Gold Substrate 98
Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers 97
Crystal and molecular structure of [(eta(5)-C5H4SiMe3)(2)LuCl](2): A precursor for the production of Lu2O3 films 95
Atomic-layer deposition of Lu2O3 94
Effects of annealing temperature and surface preparation on the formation of cobalt silicide interconnects 93
Resonant Raman microscopy of stress in silicon-based microelectronics 88
Energy-band diagram of metal/Lu2O3/silicon structures 88
Conductive n-type gallium nitride thin films prepared by sputter deposition 86
A novel 0.16 um 300 V SOIBCD for ultrasound medical applications 83
A full self-consistent methodology for strain-induced effects characterization in silicon devices 83
How Oxygen Absorption Affects the Al2O3-Encapsulated Blue Phosphorene–Au Alloy 83
Probing the Laser Ablation of Black Phosphorus by Raman Spectroscopy 83
Defect generation and suppression in device processes using a shallow trench isolation scheme 81
Stress mapping in silicon: Advantages of using a Raman spectrometer with a single dispersive stage 81
Defect Generation in Device Processing and Impact on the Electrical Performances 81
The role of high temperature treatments in stress release and defect reduction 70
Optical and thermal responses of silicene in Xene heterostructures 62
Bendable Silicene Membranes 59
Group IV membranes 43
Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets 35
Emerging Two-Dimensional Materials: Inspiring Nanotechnologies for Smart Energy Management 23
Totale 14.341
Categoria #
all - tutte 38.620
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 38.620


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019504 0 0 0 0 0 0 0 0 0 0 231 273
2019/20202.354 297 114 153 172 205 251 356 184 257 156 151 58
2020/20212.559 114 84 222 327 158 221 217 243 217 270 172 314
2021/20221.756 143 184 193 110 86 193 128 87 80 149 132 271
2022/20232.626 325 773 329 261 147 358 27 114 161 14 81 36
2023/20241.360 58 59 79 41 203 418 302 72 112 16 0 0
Totale 14.341