We show that a relatively simple top-down fabrication can be used to locally deform germanium in order to achieve uniaxial tensile strain of up to 4%. Such high strain values are theoretically predicted to transform germanium from an indirect to a direct gap semiconductor. These values of strain were obtained by control of the perimetral forces exerted by epitaxial SiGe nanostructures acting as stressors. These highly strained regions can be used to control the band structure of silicon-integrated germanium epilayers.

Bollani, M., Chrastina, D., Gagliano, L., Rossetto, L., Scopece, D., Barget, M., et al. (2015). Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures. APPLIED PHYSICS LETTERS, 107(8) [10.1063/1.4928981].

Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures

SCOPECE, DANIELE;BARGET, MICHAEL REINER;PEZZOLI, FABIO;MONTALENTI, FRANCESCO CIMBRO MATTIA
Penultimo
;
BONERA, EMILIANO
Ultimo
2015

Abstract

We show that a relatively simple top-down fabrication can be used to locally deform germanium in order to achieve uniaxial tensile strain of up to 4%. Such high strain values are theoretically predicted to transform germanium from an indirect to a direct gap semiconductor. These values of strain were obtained by control of the perimetral forces exerted by epitaxial SiGe nanostructures acting as stressors. These highly strained regions can be used to control the band structure of silicon-integrated germanium epilayers.
Articolo in rivista - Articolo scientifico
Germanium, Elemental semiconductors, Nanofabrication, Phonons, Elasticity;
English
2015
107
8
083101
reserved
Bollani, M., Chrastina, D., Gagliano, L., Rossetto, L., Scopece, D., Barget, M., et al. (2015). Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures. APPLIED PHYSICS LETTERS, 107(8) [10.1063/1.4928981].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/88200
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