We show that a relatively simple top-down fabrication can be used to locally deform germanium in order to achieve uniaxial tensile strain of up to 4%. Such high strain values are theoretically predicted to transform germanium from an indirect to a direct gap semiconductor. These values of strain were obtained by control of the perimetral forces exerted by epitaxial SiGe nanostructures acting as stressors. These highly strained regions can be used to control the band structure of silicon-integrated germanium epilayers.
Bollani, M., Chrastina, D., Gagliano, L., Rossetto, L., Scopece, D., Barget, M., et al. (2015). Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures. APPLIED PHYSICS LETTERS, 107(8) [10.1063/1.4928981].
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures
SCOPECE, DANIELE;BARGET, MICHAEL REINER;PEZZOLI, FABIO;MONTALENTI, FRANCESCO CIMBRO MATTIAPenultimo
;BONERA, EMILIANOUltimo
2015
Abstract
We show that a relatively simple top-down fabrication can be used to locally deform germanium in order to achieve uniaxial tensile strain of up to 4%. Such high strain values are theoretically predicted to transform germanium from an indirect to a direct gap semiconductor. These values of strain were obtained by control of the perimetral forces exerted by epitaxial SiGe nanostructures acting as stressors. These highly strained regions can be used to control the band structure of silicon-integrated germanium epilayers.File | Dimensione | Formato | |
---|---|---|---|
Bollani-2015-Appl Phys Lett-VoR.pdf
Solo gestori archivio
Descrizione: Article
Tipologia di allegato:
Publisher’s Version (Version of Record, VoR)
Dimensione
899.79 kB
Formato
Adobe PDF
|
899.79 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.