Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing. (C) 2013 AIP Publishing LLC.
Bietti, S., Scaccabarozzi, A., Frigeri, C., Bollani, M., Bonera, E., Falub, C., et al. (2013). Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale. APPLIED PHYSICS LETTERS, 103(26), 262106 [10.1063/1.4857835].
Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale
BIETTI, SERGIO;SCACCABAROZZI, ANDREA;BONERA, EMILIANO;MIGLIO, LEONIDA;SANGUINETTI, STEFANO
2013
Abstract
Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing. (C) 2013 AIP Publishing LLC.
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