SCACCABAROZZI, ANDREA
SCACCABAROZZI, ANDREA
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Enhancing intermediate band solar cell performances through quantum engineering of dot states by droplet epitaxy
2023 Scaccabarozzi, A; Vichi, S; Bietti, S; Cesura, F; Aho, T; Guina, M; Cappelluti, F; Acciarri, M; Sanguinetti, S
Enhancing intermediate band solar cells performances through quantum engineering of dot states by Droplet Epitaxy
2023 Scaccabarozzi, A; Vichi, S; Bietti, S; Cesura, F; Aho, T; Guina, M; Cappelluti, F; Acciarri and Stefano Sanguinetti, M
GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers
2019 Ballabio, A; Bietti, S; Scaccabarozzi, A; Esposito, L; Vichi, S; Fedorov, A; Vinattieri, A; Mannucci, C; Biccari, F; Nemcsis, A; Toth, L; Miglio, L; Gurioli, M; Isella, G; Sanguinetti, S
Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001)
2017 Marzegalli, A; Cortinovis, A; BASSO BASSET, F; Bonera, E; Pezzoli, F; Scaccabarozzi, A; Isa, F; Isella, G; Zaumseil, P; Capellini, G; Schroeder, T; Miglio, L
GaAs/AlGaAs heterostructures on suspended Ge epilayers on nominal (001) deeply patterned silicon substrates
2017 Bietti, S; Ballabio, A; Esposito, L; Fedorov, A; Scaccabarozzi, A; Vinattieri, A; Biccari, F; Nemcsics, Á; Tóth, L; Gurioli, M; Isella, G; Miglio, L; Sanguinetti, S
An exceptional thermal strain reduction in Ge suspended layer grown on Si by a tilting pillar architecture
2016 Marzegalli, A; Cortinovis, A; BASSO BASSET, F; Bonera, E; Pezzoli, F; Scaccabarozzi, A; Isa, F; Isella, G; Zaumseil, P; Capellini, G; Schröder, T; Miglio, L
Integration of InGaP/GaAs/Ge triple-junction solar cells on deeply patterned silicon substrates
2016 Scaccabarozzi, A; Binetti, S; Acciarri, M; Isella, G; Campesato, R; Gori, G; Casale, M; Mancarella, F; Noack, M; von Känel, H; Miglio, L
Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars
2016 Bergamaschini, R; Bietti, S; Castellano, A; Frigeri, C; Falub, C; Scaccabarozzi, A; Bollani, M; Von Känel, H; Miglio, L; Sanguinetti, S
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates
2016 Bergamaschini, R; Salvalaglio, M; Scaccabarozzi, A; Isa, F; Falub, C; Isella, G; Von Känel, H; Montalenti, F; Miglio, L
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si
2015 Salvalaglio, M; Bergamaschini, R; Isa, F; Scaccabarozzi, A; Isella, G; Backofen, R; Voigt, A; Montalenti, F; Capellini, G; Schroeder, T; Von Känel, H; Miglio, L
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars
2015 Bergamaschini, R; Salvalaglio, M; Isa, F; Scaccabarozzi, A; Isella, G; Backofen, A; Voigt, A; Marzegalli, A; Capellini, G; Skibitzki, O; Yamamoto, Y; Schroeder, T; von Känel, H; Montalenti, F; Miglio, L
Formation of stable Si-O-C submonolayers on hydrogenterminated silicon(111) under low-temperature conditions
2015 Khung, Y; Ngalim, S; Scaccabarozzi, A; Narducci, D
Thermal and UV Hydrosilylation of Alcohol-Based Bifunctional Alkynes on Si (111) surfaces: How surface radicals influence surface bond formation
2015 Khung, Y; Ngalim, S; Scaccabarozzi, A; Narducci, D
A Structural Characterization of GaAs MBE Grown on Si Pillars
2014 Frigeri, C; Bietti, S; Scaccabarozzi, A; Bergamaschini, R; Falub, C; Grillo, V; Bollani, M; Bonera, E; Niedermann, P; von Känel, H; Sanguinetti, S; Miglio, L
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale
2014 Miglio, L; Bergamaschini, R; Bietti, S; Bonera, E; Grilli, E; Guzzi, M; Marzegalli, A; Montalenti, F; Pezzoli, F; Salvalaglio, M; Sanguinetti, S; Scaccabarozzi, A; Falub, C; Isa, F; Kreiliger, T; Taboada, A; Chrastina, D; Frigerio, I; Isella, G; Meduna, M; Wewior, L; Fuster, D; Alen, B; Bollani, M; Dommann, A; Neels, A; Niedermann, P; Frigeri, C; Fompeyrine, J; Richter, M; Uccelli, E; Mancarella, F; von Kanel, H
Photoluminescence study of the strain relaxation of GaAs crystals grown on deeply patterned Si substrates
2014 Scaccabarozzi, A; Bietti, S; Fedorov, A; von Känel, H; Miglio, L; Sanguinetti, S
Size control of GaAs quantum dots grown by droplet epitaxy for device applications
2014 Bietti, S; Esposito, L; Scaccabarozzi, A; Fedorov, A; Sanguinetti, S
3D heteroepitaxy on patterned Si substrates: a new monolithic integration strategy
2013 Sanguinetti, S; Bergamaschini, R; Bietti, S; Isa, F; Isella, G; Marzegalli, A; Frigeri, C; Montalenti, F; Pezzoli, F; Scaccabarozzi, A; Falub, C; von Kaenel, H; Miglio, L
Evidence of two-photon absorption in strain-free quantum dot GaAs/AlGaAs solar cells
2013 Scaccabarozzi, A; Adorno, S; Bietti, S; Acciarri, M; Sanguinetti, S
GaAs/AlGaAs quantum dot intermediate band solar cells
2013 Scaccabarozzi, A