Three-dimensional, epitaxial GaAs crystals are fabricated on micro-pillars patterned into Si(001) substrates by exploiting kinetically controlled growth conditions in Molecular Beam Epitaxy. The evolution of crystal morphology during growth is assessed by considering samples with increasing GaAs deposit thickness. Experimental results are interpreted by a kinetic growth model, which takes into account the fundamental aspects of the growth and mutual deposition flux shielding between neighboring crystals. Different substrate pattern geometries with dissimilar lateral sizes and periodicities of the Si micro-pillars are considered and self-similar crystal structures are recognized. It is demonstrated that the top faceting of the GaAs crystals is tunable, which can pave the way to locally engineer compound semiconductor quantum structures on Si(001) substrates.

Bergamaschini, R., Bietti, S., Castellano, A., Frigeri, C., Falub, C., Scaccabarozzi, A., et al. (2016). Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars. JOURNAL OF APPLIED PHYSICS, 120(24) [10.1063/1.4972467].

Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars

BERGAMASCHINI, ROBERTO
Primo
;
BIETTI, SERGIO
Secondo
;
SCACCABAROZZI, ANDREA;MIGLIO, LEONIDA
Penultimo
;
SANGUINETTI, STEFANO
Ultimo
2016

Abstract

Three-dimensional, epitaxial GaAs crystals are fabricated on micro-pillars patterned into Si(001) substrates by exploiting kinetically controlled growth conditions in Molecular Beam Epitaxy. The evolution of crystal morphology during growth is assessed by considering samples with increasing GaAs deposit thickness. Experimental results are interpreted by a kinetic growth model, which takes into account the fundamental aspects of the growth and mutual deposition flux shielding between neighboring crystals. Different substrate pattern geometries with dissimilar lateral sizes and periodicities of the Si micro-pillars are considered and self-similar crystal structures are recognized. It is demonstrated that the top faceting of the GaAs crystals is tunable, which can pave the way to locally engineer compound semiconductor quantum structures on Si(001) substrates.
Articolo in rivista - Articolo scientifico
GaAs; Si; heteroepitaxy; patterned substrate
English
Bergamaschini, R., Bietti, S., Castellano, A., Frigeri, C., Falub, C., Scaccabarozzi, A., et al. (2016). Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars. JOURNAL OF APPLIED PHYSICS, 120(24) [10.1063/1.4972467].
Bergamaschini, R; Bietti, S; Castellano, A; Frigeri, C; Falub, C; Scaccabarozzi, A; Bollani, M; Von Känel, H; Miglio, L; Sanguinetti, S
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/149834
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