VICHI, STEFANO
VICHI, STEFANO
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling
2024 Cesura, F; Vichi, S; Tuktamyshev, A; Bietti, S; Fedorov, A; Sanguinetti, S; Iizuka, K; Tsukamoto, S
Highly symmetrical DE QDs on GaAs(111)A at 780 nm and 1.3 µm
2024 Tuktamyshev, A; Vichi, S; Fedorov, A; Bietti, S; Sanguinetti, S
Local droplet etching of a vicinal InGaAs(111)A metamorphic layer
2024 Tuktamyshev, A; Lambardi, D; Vichi, S; Cesura, F; Cecchi, S; Fedorov, A; Bietti, S; Sanguinetti, S
Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2
2024 Tuktamyshev, A; Vichi, S; Bietti, S; Fedorov, A; Sanguinetti, S
Quantum-confined modulated nanostructure for optoelectronic devices
2024 Vichi, S; Bietti, S; Tuktamyshev, A; Fedorov, A; Sanguinetti, S
Droplet nucleation on a vicinal surface: temperature-activated transitions of a density dependence
2023 Tuktamyshev, A; Vichi, S; Cesura, F; Fedorov, A; Bietti, S; Sanguinetti, S
Enhancing intermediate band solar cell performances through quantum engineering of dot states by droplet epitaxy
2023 Scaccabarozzi, A; Vichi, S; Bietti, S; Cesura, F; Aho, T; Guina, M; Cappelluti, F; Acciarri, M; Sanguinetti, S
Enhancing intermediate band solar cells performances through quantum engineering of dot states by Droplet Epitaxy
2023 Scaccabarozzi, A; Vichi, S; Bietti, S; Cesura, F; Aho, T; Guina, M; Cappelluti, F; Acciarri and Stefano Sanguinetti, M
Temperature activated transitions in the self assembly of Ga and In droplets on (111)A vicinal substrates
2023 Tuktamyshev, A; Cesura, F; Vichi, S; Fedorov, A; Bietti, S; Sanguinetti, S
Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate
2022 Barbiero, A; Tuktamyshev, A; Pirard, G; Huwer, J; Muller, T; Stevenson, R; Bietti, S; Vichi, S; Fedorov, A; Bester, G; Sanguinetti, S; Shields, A
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control
2022 Tuktamyshev, A; Vichi, S; Cesura, F; Fedorov, A; Bietti, S; Chrastina, D; Tsukamoto, S; Sanguinetti, S
Optically controlled dual-band quantum dot infrared photodetector
2022 Vichi, S; Bietti, S; Basso Basset, F; Tuktamyshev, A; Fedorov, A; Sanguinetti, S
Precise structure characterization of droplet epitaxial telecom-wavelength QDs for Quantum Information Technology
2022 Tuktamyshev, A; Vichi, S; Cesura, F; Bietti, S; Fedorov, A; Sanguinetti, S
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates
2022 Tuktamyshev, A; Vichi, S; Cesura, F; Fedorov, A; Carminati, G; Lambardi, D; Pedrini, J; Vitiello, E; Pezzoli, F; Bietti, S; Sanguinetti, S
Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets
2022 Azadmand, M; Vichi, S; Cesura, F; Bietti, S; Chrastina, D; Bonera, E; Vanacore, G; Tsukamoto, S; Sanguinetti, S
Bandgap and Intrinsic Electric Field Engineering in Nitrides: Towards Efficient Red LEDs
2021 Vichi, S
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates
2021 Tuktamyshev, A; Fedorov, A; Bietti, S; Vichi, S; Tambone, R; Tsukamoto, S; Sanguinetti, S
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
2021 Tuktamyshev, A; Fedorov, A; Bietti, S; Vichi, S; Zeuner, K; Jöns, K; Chrastina, D; Tsukamoto, S; Zwiller, V; Gurioli, M; Sanguinetti, S
Droplet epitaxy quantum dot based infrared photodetectors
2020 Vichi, S; Bietti, S; Khalili, A; Costanzo, M; Cappelluti, F; Esposito, L; Somaschini, C; Fedorov, A; Tsukamoto, S; Rauter, P; Sanguinetti, S
Increasing the Luminescence Efficiency of Long-Wavelength (In,Ga)N Quantum Well Structures by Electric Field Engineering Using an (Al,Ga)N Capping Layer
2020 Vichi, S; Robin, Y; Sanguinetti, S; Pristovsek, M; Amano, H