We have successfully grown, through the detailed control of the growth kinetics, flat InAlAs metamorphic buffer layers on 2 degrees -off GaAs(111)A substrates using molecular beam epitaxy. Almost full plastic relaxation is obtained for a layer thickness > 40 nm. The control of an adatom diffusion length and a step ejection probability from the bunches permits a reduction of the InAlAs epilayer root-mean-square surface roughness to 0.55 nm.
Tuktamyshev, A., Vichi, S., Cesura, F., Fedorov, A., Bietti, S., Chrastina, D., et al. (2022). Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control. JOURNAL OF CRYSTAL GROWTH, 600(15 December 2022) [10.1016/j.jcrysgro.2022.126906].
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control
Tuktamyshev, A
Primo
;Vichi, S;Cesura, F;Bietti, S;Tsukamoto, S;Sanguinetti, SUltimo
2022
Abstract
We have successfully grown, through the detailed control of the growth kinetics, flat InAlAs metamorphic buffer layers on 2 degrees -off GaAs(111)A substrates using molecular beam epitaxy. Almost full plastic relaxation is obtained for a layer thickness > 40 nm. The control of an adatom diffusion length and a step ejection probability from the bunches permits a reduction of the InAlAs epilayer root-mean-square surface roughness to 0.55 nm.
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