TUKTAMYSHEV, ARTUR

TUKTAMYSHEV, ARTUR  

DIPARTIMENTO DI SCIENZA DEI MATERIALI  

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Risultati 1 - 20 di 28 (tempo di esecuzione: 0.03 secondi).
Titolo Tipologia Data di pubblicazione Autori File
Initial Growth Stages of Si-Ge-Sn Ternary Alloys Grown on Si (100) by Low-Temperature Molecular-Beam Epitaxy 01 - Articolo su rivista 2015 Tuktamyshev, AR +
Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions 01 - Articolo su rivista 2015 Tuktamyshev, AR +
Strained multilayer structures with pseudomorphic GeSiSn layers 01 - Articolo su rivista 2016 Tuktamyshev, AR +
The ordering of Ge islands on a stepped Si(100) surface 02 - Intervento a convegno 2017 Tuktamyshev A. R. +
Valence-band offsets in strained SiGeSn/Si layers with different tin contents 01 - Articolo su rivista 2017 Tuktamyshev, AR +
Sn influence on MBE growth of GeSiSn/Si MQW 02 - Intervento a convegno 2017 Tuktamyshev, AR +
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100) 01 - Articolo su rivista 2017 Tuktamyshev, AR +
Splitting of frequencies of optical phonons in tensile-strained germanium layers 01 - Articolo su rivista 2017 Tuktamyshev A. R. +
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters 01 - Articolo su rivista 2017 Tuktamyshev, AR +
Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures 01 - Articolo su rivista 2017 Tuktamyshev, Artur +
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers 01 - Articolo su rivista 2018 Tuktamyshev, Artur +
Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures 01 - Articolo su rivista 2018 Tuktamyshev, Artur +
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands 01 - Articolo su rivista 2018 Tuktamyshev, AR +
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands 01 - Articolo su rivista 2018 Tuktamyshev, AR +
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates 01 - Articolo su rivista 2019 Tuktamyshev A.Fedorov A.Bietti S.Tsukamoto S.Sanguinetti S.
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution 01 - Articolo su rivista 2019 Basset, FBBietti, STuktamyshev, AVichi, SBonera, ESanguinetti, S
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 01 - Articolo su rivista 2020 Tuktamyshev, ABietti, STsukamoto, SBergamaschini, RMontalenti, FSanguinetti, S +
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots 01 - Articolo su rivista 2020 Bietti, SergioBasset, Francesco BassoTuktamyshev, ArturBonera, EmilianoSanguinetti, Stefano +
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates 01 - Articolo su rivista 2021 Tuktamyshev, A.Bietti, S.Vichi, S.Tsukamoto, S.Sanguinetti, S. +
Droplet Epitaxy Quantum Dots on GaAs (111)A substrates for Quantum Information Applications 07 - Tesi di dottorato Bicocca post 2009 2021 TUKTAMYSHEV, ARTUR