TUKTAMYSHEV, ARTUR
TUKTAMYSHEV, ARTUR
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Shaping the Emission Directivity of Single Quantum Dots in Dielectric Nanodisks Exploiting Mie Resonances
2025 Cruciano, C; Rocco, D; Genco, A; Tognazzi, A; Locatelli, A; Carletti, L; Fedorov, A; Trovatello, C; Di Blasio, G; Bargigia, I; Louca, C; Gubian, P; Tavani, G; Lovisolo, L; Tuktamyshev, A; Andreani, L; Galli, M; Cerullo, G; Leo, G; Sanguinetti, S; De Angelis, C; Bollani, M
Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling
2024 Cesura, F; Vichi, S; Tuktamyshev, A; Bietti, S; Fedorov, A; Sanguinetti, S; Iizuka, K; Tsukamoto, S
Highly symmetrical DE QDs on GaAs(111)A at 780 nm and 1.3 µm
2024 Tuktamyshev, A; Vichi, S; Fedorov, A; Bietti, S; Sanguinetti, S
Local droplet etching of a vicinal InGaAs(111)A metamorphic layer
2024 Tuktamyshev, A; Lambardi, D; Vichi, S; Cesura, F; Cecchi, S; Fedorov, A; Bietti, S; Sanguinetti, S
Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2
2024 Tuktamyshev, A; Vichi, S; Bietti, S; Fedorov, A; Sanguinetti, S
Quantum-confined modulated nanostructure for optoelectronic devices
2024 Vichi, S; Bietti, S; Tuktamyshev, A; Fedorov, A; Sanguinetti, S
Droplet nucleation on a vicinal surface: temperature-activated transitions of a density dependence
2023 Tuktamyshev, A; Vichi, S; Cesura, F; Fedorov, A; Bietti, S; Sanguinetti, S
Temperature activated transitions in the self assembly of Ga and In droplets on (111)A vicinal substrates
2023 Tuktamyshev, A; Cesura, F; Vichi, S; Fedorov, A; Bietti, S; Sanguinetti, S
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate
2022 Anzi, L; Tuktamyshev, A; Fedorov, A; Zurutuza, A; Sanguinetti, S; Sordan, R
Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate
2022 Barbiero, A; Tuktamyshev, A; Pirard, G; Huwer, J; Muller, T; Stevenson, R; Bietti, S; Vichi, S; Fedorov, A; Bester, G; Sanguinetti, S; Shields, A
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control
2022 Tuktamyshev, A; Vichi, S; Cesura, F; Fedorov, A; Bietti, S; Chrastina, D; Tsukamoto, S; Sanguinetti, S
Optically controlled dual-band quantum dot infrared photodetector
2022 Vichi, S; Bietti, S; Basso Basset, F; Tuktamyshev, A; Fedorov, A; Sanguinetti, S
Precise structure characterization of droplet epitaxial telecom-wavelength QDs for Quantum Information Technology
2022 Tuktamyshev, A; Vichi, S; Cesura, F; Bietti, S; Fedorov, A; Sanguinetti, S
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates
2022 Tuktamyshev, A; Vichi, S; Cesura, F; Fedorov, A; Carminati, G; Lambardi, D; Pedrini, J; Vitiello, E; Pezzoli, F; Bietti, S; Sanguinetti, S
Droplet Epitaxy Quantum Dots on GaAs (111)A substrates for Quantum Information Applications
2021 Tuktamyshev, A
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates
2021 Tuktamyshev, A; Fedorov, A; Bietti, S; Vichi, S; Tambone, R; Tsukamoto, S; Sanguinetti, S
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
2021 Tuktamyshev, A; Fedorov, A; Bietti, S; Vichi, S; Zeuner, K; Jöns, K; Chrastina, D; Tsukamoto, S; Zwiller, V; Gurioli, M; Sanguinetti, S
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
2020 Bietti, S; Basset, F; Tuktamyshev, A; Bonera, E; Fedorov, A; Sanguinetti, S
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A
2020 Tuktamyshev, A; Fedorov, A; Bietti, S; Tsukamoto, S; Bergamaschini, R; Montalenti, F; Sanguinetti, S
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution
2019 Basset, F; Bietti, S; Tuktamyshev, A; Vichi, S; Bonera, E; Sanguinetti, S