We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In (Formula presented.) Al (Formula presented.) As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.
Tuktamyshev, A., Vichi, S., Cesura, F., Fedorov, A., Carminati, G., Lambardi, D., et al. (2022). Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates. NANOMATERIALS, 12(20) [10.3390/nano12203571].
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates
Tuktamyshev, ArturCo-primo
;Vichi, StefanoCo-primo
;Cesura, Federico
Co-primo
;Lambardi, Davide;Pedrini, Jacopo;Vitiello, Elisa;Pezzoli, Fabio;Bietti, Sergio;Sanguinetti, StefanoUltimo
2022
Abstract
We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In (Formula presented.) Al (Formula presented.) As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.
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