Quantum-confined modulated nanostructure for optoelectronic devices

The development of quantum nanostructures is of primary importance for the advancement of optoelectronic technologies, and particularly the successful implementation of quantum dots (QDs) has the potential to result in a generational leap in the field. Despite the promises, the performance of QD-based optoelectronic devices is still lacking compared to the state-of-theart technology. One approach to overcome their limitations is to fully exploit the engineering possibilities allowed by QDs, by controlling not only their quantum states but also the carrier dynamics in the nanostructures. This approach allows control both wavefunction shaping and interlevel coupling, permitting to selectively enhance or suppress recombination channels. Our group is facing this challenge by designing a hybrid nanostructure driven by the concept of quantum confinement modulation. This approach exploits the ability of Droplet Epitaxy to grow homoepitaxial QDs on a quantum well, combining the advantages of 1D and 3D confinement while overcoming their individual drawbacks. In this talk I will discuss the impact of this approach on optoelectronic devices, focusing on the application in long-wave infrared detectors and intermediate band solar cells.