TUKTAMYSHEV, ARTUR
TUKTAMYSHEV, ARTUR
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions
2015 Timofeev, V; Kokhanenko, A; Nikiforov, A; Mashanov, V; Tuktamyshev, A; Loshkarev, I
Initial Growth Stages of Si-Ge-Sn Ternary Alloys Grown on Si (100) by Low-Temperature Molecular-Beam Epitaxy
2015 Tuktamyshev, A; Mashanov, V; Timofeev, V; Nikiforov, A; Teys, S
Strained multilayer structures with pseudomorphic GeSiSn layers
2016 Timofeev, V; Nikiforov, A; Tuktamyshev, A; Yesin, M; Mashanov, V; Gutakovskii, A; Baidakova, N
Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures
2017 Timofeev, V; Nikiforov, A; Tuktamyshev, A; Bloshkin, A; Mashanov, V; Teys, S; Loshkarev, I; Baidakova, N
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters
2017 Timofeev, V; Nikiforov, A; Kokhanenko, A; Tuktamyshev, A; Mashanov, V; Loshkarev, I; Novikov, V
The ordering of Ge islands on a stepped Si(100) surface
2017 Yesin, M; Timofeev, V; Tuktamyshev, A; Nikiforov, A; Loshkarev, I
Valence-band offsets in strained SiGeSn/Si layers with different tin contents
2017 Bloshkin, A; Yakimov, A; Timofeev, V; Tuktamyshev, A; Nikiforov, A; Murashov, V
Sn influence on MBE growth of GeSiSn/Si MQW
2017 Tuktamyshev, A; Timofeev, V; Nikiforov, A; Mashanov, V; Gutakovskii, A; Baydakova, N
Splitting of frequencies of optical phonons in tensile-strained germanium layers
2017 Volodin, V; Timofeev, V; Tuktamyshev, A; Nikiforov, A
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)
2017 Nikiforov, A; Timofeev, V; Tuktamyshev, A; Yakimov, A; Mashanov, V; Gutakovskii, A
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands
2018 Esin, M; Nikiforov, A; Timofeev, V; Tuktamyshev, A; Mashanov, V; Loshkarev, I; Deryabin, A; Pchelyakov, O
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands
2018 Yesin, M; Nikiforov, A; Timofeev, V; Mashanov, V; Tuktamyshev, A; Loshkarev, I; Pchelyakov, O
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers
2018 Timofeev, V; Nikiforov, A; Tuktamyshev, A; Mashanov, V; Yesin, M; Bloshkin, A
Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures
2018 Timofeev, V; Nikiforov, A; Tuktamyshev, A; Mashanov, V; Loshkarev, I; Bloshkin, A; Gutakovskii, A
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution
2019 Basset, F; Bietti, S; Tuktamyshev, A; Vichi, S; Bonera, E; Sanguinetti, S
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates
2019 Tuktamyshev, A; Fedorov, A; Bietti, S; Tsukamoto, S; Sanguinetti, S
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A
2020 Tuktamyshev, A; Fedorov, A; Bietti, S; Tsukamoto, S; Bergamaschini, R; Montalenti, F; Sanguinetti, S
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
2020 Bietti, S; Basset, F; Tuktamyshev, A; Bonera, E; Fedorov, A; Sanguinetti, S
Droplet Epitaxy Quantum Dots on GaAs (111)A substrates for Quantum Information Applications
2021 Tuktamyshev, A
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates
2021 Tuktamyshev, A; Fedorov, A; Bietti, S; Vichi, S; Tambone, R; Tsukamoto, S; Sanguinetti, S