We demonstrated nanopit formation by Ga-assisted local droplet etching technique in InGaAs metamorphic layers grown on vicinal GaAs(111)A substrates. We studied nanopit formation depending on the substrate temperature, Ga flux and Ga amount. The etched pits show a highly symmetrical pyramidal shape with an equilateral triangular base and the edges of the triangle are along <11¯0> directions. The observed behavior, in terms of nanopit density, depth and, aspect ratio is well described by a model taking into account the dynamics of the droplet etching process.

Tuktamyshev, A., Lambardi, D., Vichi, S., Cesura, F., Cecchi, S., Fedorov, A., et al. (2024). Local droplet etching of a vicinal InGaAs(111)A metamorphic layer. APPLIED SURFACE SCIENCE, 669(1 October 2024) [10.1016/j.apsusc.2024.160450].

Local droplet etching of a vicinal InGaAs(111)A metamorphic layer

Tuktamyshev, Artur
Primo
;
Lambardi, Davide;Vichi, Stefano;Cesura, Federico;Cecchi, Stefano;Bietti, Sergio;Sanguinetti, Stefano
Ultimo
2024

Abstract

We demonstrated nanopit formation by Ga-assisted local droplet etching technique in InGaAs metamorphic layers grown on vicinal GaAs(111)A substrates. We studied nanopit formation depending on the substrate temperature, Ga flux and Ga amount. The etched pits show a highly symmetrical pyramidal shape with an equilateral triangular base and the edges of the triangle are along <11¯0> directions. The observed behavior, in terms of nanopit density, depth and, aspect ratio is well described by a model taking into account the dynamics of the droplet etching process.
Articolo in rivista - Articolo scientifico
Local droplet etching; Metamorphic buffer layer; Molecular beam epitaxy; Self-assembled nanopits; Vicinal GaAs(111)A;
English
8-giu-2024
2024
669
1 October 2024
160450
none
Tuktamyshev, A., Lambardi, D., Vichi, S., Cesura, F., Cecchi, S., Fedorov, A., et al. (2024). Local droplet etching of a vicinal InGaAs(111)A metamorphic layer. APPLIED SURFACE SCIENCE, 669(1 October 2024) [10.1016/j.apsusc.2024.160450].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/483119
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