We report preliminary results on InGaP/InGaAs/Ge photovoltaic cells for concentrated terrestrial applications, monolithically integrated on engineered Si(001) substrates. Cells deposited on planar Ge/Si(001) epilayers, grown by plasma-enhanced chemical vapor deposition, provide good efficiency and spectral response, despite the small thickness of the Ge epilayers and a threading dislocation density as large as 107/cm2. The presence of microcracks generated by the thermal misfit is compensated by a dense collection grid that avoids insulated areas. In order to avoid the excessive shadowing introduced by the use of a dense grid, the crack density needs to be lowered. Here, we show that deep patterning of the Si substrate in blocks can be an option, provided that a continuous Ge layer is formed at the top, and it is suitably planarized before the metalorganic chemical vapor deposition. The crack density is effectively decreased, despite that the efficiency is also lowered with respect to unpatterned devices. The reasons of this efficiency reduction are discussed, and a strategy for improvement is proposed and explored. Full morphological analysis of the coalesced Ge blocks is reported, and the final devices are tested under concentrated AM1.5D spectrum. Copyright © 2016 John Wiley & Sons, Ltd.

Scaccabarozzi, A., Binetti, S., Acciarri, M., Isella, G., Campesato, R., Gori, G., et al. (2016). Integration of InGaP/GaAs/Ge triple-junction solar cells on deeply patterned silicon substrates. PROGRESS IN PHOTOVOLTAICS, 24(10), 1368-1377 [10.1002/pip.2798].

Integration of InGaP/GaAs/Ge triple-junction solar cells on deeply patterned silicon substrates

SCACCABAROZZI, ANDREA
;
BINETTI, SIMONA OLGA;ACCIARRI, MAURIZIO FILIPPO;MIGLIO, LEONIDA
2016

Abstract

We report preliminary results on InGaP/InGaAs/Ge photovoltaic cells for concentrated terrestrial applications, monolithically integrated on engineered Si(001) substrates. Cells deposited on planar Ge/Si(001) epilayers, grown by plasma-enhanced chemical vapor deposition, provide good efficiency and spectral response, despite the small thickness of the Ge epilayers and a threading dislocation density as large as 107/cm2. The presence of microcracks generated by the thermal misfit is compensated by a dense collection grid that avoids insulated areas. In order to avoid the excessive shadowing introduced by the use of a dense grid, the crack density needs to be lowered. Here, we show that deep patterning of the Si substrate in blocks can be an option, provided that a continuous Ge layer is formed at the top, and it is suitably planarized before the metalorganic chemical vapor deposition. The crack density is effectively decreased, despite that the efficiency is also lowered with respect to unpatterned devices. The reasons of this efficiency reduction are discussed, and a strategy for improvement is proposed and explored. Full morphological analysis of the coalesced Ge blocks is reported, and the final devices are tested under concentrated AM1.5D spectrum. Copyright © 2016 John Wiley & Sons, Ltd.
Articolo in rivista - Articolo scientifico
monolithic integration; multi-junction solar cells; silicon integration; substrate patterning;
monolithic integration; multi-junction solar cells; silicon integration; substrate patterning; Electronic, Optical and Magnetic Materials; Renewable Energy, Sustainability and the Environment; Condensed Matter Physics; Electrical and Electronic Engineering
English
1368
1377
10
Scaccabarozzi, A., Binetti, S., Acciarri, M., Isella, G., Campesato, R., Gori, G., et al. (2016). Integration of InGaP/GaAs/Ge triple-junction solar cells on deeply patterned silicon substrates. PROGRESS IN PHOTOVOLTAICS, 24(10), 1368-1377 [10.1002/pip.2798].
Scaccabarozzi, A; Binetti, S; Acciarri, M; Isella, G; Campesato, R; Gori, G; Casale, M; Mancarella, F; Noack, M; von Känel, H; Miglio, L
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/133725
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