Rare earth oxides could represent a valuable alternative to SiO2 in complementary metal-oxide-semiconductor devices. Lu2O3 is proposed because of its predicted thermodynamical stability on silicon and large conduction band offset. We report on the growth by atomic-layer deposition of lutetium oxide films using the dimeric {[C5H4(SiMe3)](2)LuCl}(2) complex, which has been synthesized for this purpose, and H2O. The films were found to be stoichiometric, with Lu2O3 composition, and amorphous. Annealing in nitrogen at 950degreesC leads to crystallization in the cubic bixbyite structure. The dielectric constant of the as-grown Lu2O3 layers is 12+/-1.
Scarel, G., Bonera, E., Wiemer, C., Tallarida, G., Spiga, S., Fanciulli, M., et al. (2004). Atomic-layer deposition of Lu2O3. APPLIED PHYSICS LETTERS, 85(4), 630-632 [10.1063/1.1773360].
Atomic-layer deposition of Lu2O3
BONERA, EMILIANO;FANCIULLI, MARCO;
2004
Abstract
Rare earth oxides could represent a valuable alternative to SiO2 in complementary metal-oxide-semiconductor devices. Lu2O3 is proposed because of its predicted thermodynamical stability on silicon and large conduction band offset. We report on the growth by atomic-layer deposition of lutetium oxide films using the dimeric {[C5H4(SiMe3)](2)LuCl}(2) complex, which has been synthesized for this purpose, and H2O. The films were found to be stoichiometric, with Lu2O3 composition, and amorphous. Annealing in nitrogen at 950degreesC leads to crystallization in the cubic bixbyite structure. The dielectric constant of the as-grown Lu2O3 layers is 12+/-1.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
