Internal photoemission spectroscopy has been used to determine the band alignment in Lu2O3 based metal-oxide-semiconductor structures. The Si/Lu2O3 interface conduction- and valence-band offsets were determined to be 2.1±0.1 and 2.6±0.1 eV, respectively. The energy barrier for electrons at the Al/Lu2O 3 interface is 2.4±0.1 eV. The value of the Lu 2O3 transport band gap, obtained by photoconductivity measurements, was found to be 5.8±0.1 eV. Optical absorption spectroscopy gave a value of 4.89±0.02 eV for the Lu2O3 optical band gap. © 2004 American Institute of Physics.

Seguini, G., Bonera, E., Spiga, S., Scarel, G., Fanciulli, M. (2004). Energy-band diagram of metal/Lu2O3/silicon structures. APPLIED PHYSICS LETTERS, 85(22), 5316-5318 [10.1063/1.1828600].

Energy-band diagram of metal/Lu2O3/silicon structures

BONERA, EMILIANO;FANCIULLI, MARCO
2004

Abstract

Internal photoemission spectroscopy has been used to determine the band alignment in Lu2O3 based metal-oxide-semiconductor structures. The Si/Lu2O3 interface conduction- and valence-band offsets were determined to be 2.1±0.1 and 2.6±0.1 eV, respectively. The energy barrier for electrons at the Al/Lu2O 3 interface is 2.4±0.1 eV. The value of the Lu 2O3 transport band gap, obtained by photoconductivity measurements, was found to be 5.8±0.1 eV. Optical absorption spectroscopy gave a value of 4.89±0.02 eV for the Lu2O3 optical band gap. © 2004 American Institute of Physics.
Articolo in rivista - Articolo scientifico
Lu2O3, internal-photoemission spectroscopy
English
2004
85
22
5316
5318
3
none
Seguini, G., Bonera, E., Spiga, S., Scarel, G., Fanciulli, M. (2004). Energy-band diagram of metal/Lu2O3/silicon structures. APPLIED PHYSICS LETTERS, 85(22), 5316-5318 [10.1063/1.1828600].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/23543
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