We present a new concept applicable to the epitaxial growth of dislocation-free semiconductor structures on a mismatched substrate with a thickness far exceeding the conventional critical thickness for plastic strain relaxation. This innovative concept is based on the out-of-equilibrium growth of compositionally graded alloys on deeply patterned substrates. We obtain space-filling arrays of individual crystals several micrometers wide in which the mechanism of strain relaxation is fundamentally changed from plastic to elastic. The complete absence of dislocations at and near the heterointerface may pave the way to realize CMOS integrated SiGe X-ray detectors.

Isa, F., Jung, A., Salvalaglio, M., Dasilva, Y., Meduaňa, M., Barget, M., et al. (2016). Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals. MRS ADVANCES, 1(50), 3403-3408 [10.1557/adv.2016.355].

Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals

Salvalaglio, Marco;Barget, Michael;Pezzoli, Fabio;Bonera, Emiliano;Montalenti, Francesco;
2016

Abstract

We present a new concept applicable to the epitaxial growth of dislocation-free semiconductor structures on a mismatched substrate with a thickness far exceeding the conventional critical thickness for plastic strain relaxation. This innovative concept is based on the out-of-equilibrium growth of compositionally graded alloys on deeply patterned substrates. We obtain space-filling arrays of individual crystals several micrometers wide in which the mechanism of strain relaxation is fundamentally changed from plastic to elastic. The complete absence of dislocations at and near the heterointerface may pave the way to realize CMOS integrated SiGe X-ray detectors.
Articolo in rivista - Articolo scientifico
crystal growth; dislocations; elastic properties;
crystal growth; dislocations; elastic properties; Mechanical Engineering; Mechanics of Materials; Materials Science (all); Condensed Matter Physics
English
2016
1
50
3403
3408
reserved
Isa, F., Jung, A., Salvalaglio, M., Dasilva, Y., Meduaňa, M., Barget, M., et al. (2016). Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals. MRS ADVANCES, 1(50), 3403-3408 [10.1557/adv.2016.355].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/214365
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