A study was performed on the measurement of the tensorial nature of stress in silicon. Raman spectroscopy technique was used for tensorial analysis. The method was used to discern the models suitable for the description of the stress tensor in shallow trench isolations for microelectronics.
Bonera, E., Fanciulli, M., Batchelder, D. (2003). Combining high resolution and tensorial analysis in Raman stress measurements of silicon. JOURNAL OF APPLIED PHYSICS, 94(4), 2729-2740 [10.1063/1.1592872].
Combining high resolution and tensorial analysis in Raman stress measurements of silicon
BONERA, EMILIANO;FANCIULLI, MARCO;
2003
Abstract
A study was performed on the measurement of the tensorial nature of stress in silicon. Raman spectroscopy technique was used for tensorial analysis. The method was used to discern the models suitable for the description of the stress tensor in shallow trench isolations for microelectronics.
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