We present the fabrication of axial InAs/GaAs nanowire heterostructures on silicon with atomically sharp interfaces by molecular beam epitaxy. Our method exploits the crystallization at low temperature, by As supply, of In droplets deposited on the top of GaAs NWs grown by the self-assisted (self-catalyzed) mode. Extensive characterization based on transmission electron microscopy sets an upper limit for the InAs/GaAs interface thickness within few bilayers (≤1.5 nm). A detailed study of elastic/plastic strain relaxation at the interface is also presented, highlighting the role of nanowire lateral free surfaces.

Scarpellini, D., Somaschini, C., Fedorov, A., Bietti, S., Frigeri, C., Grillo, V., et al. (2015). InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires. NANO LETTERS, 15(6), 3677-3683 [10.1021/nl504690r].

InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires

SOMASCHINI, CLAUDIO
Secondo
;
BIETTI, SERGIO;ESPOSITO, LUCA;SALVALAGLIO, MARCO;MARZEGALLI, ANNA;MONTALENTI, FRANCESCO CIMBRO MATTIA;BONERA, EMILIANO;SANGUINETTI, STEFANO
Ultimo
2015

Abstract

We present the fabrication of axial InAs/GaAs nanowire heterostructures on silicon with atomically sharp interfaces by molecular beam epitaxy. Our method exploits the crystallization at low temperature, by As supply, of In droplets deposited on the top of GaAs NWs grown by the self-assisted (self-catalyzed) mode. Extensive characterization based on transmission electron microscopy sets an upper limit for the InAs/GaAs interface thickness within few bilayers (≤1.5 nm). A detailed study of elastic/plastic strain relaxation at the interface is also presented, highlighting the role of nanowire lateral free surfaces.
Articolo in rivista - Articolo scientifico
GaAs; Heterostructure; InAs; Molecular beam epitaxy; Self-assisted growth; Semiconductor nanowires; Condensed Matter Physics; Bioengineering; Chemistry (all); Materials Science (all); Mechanical Engineering
English
2015
15
6
3677
3683
partially_open
Scarpellini, D., Somaschini, C., Fedorov, A., Bietti, S., Frigeri, C., Grillo, V., et al. (2015). InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires. NANO LETTERS, 15(6), 3677-3683 [10.1021/nl504690r].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/91103
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