The nucleation and the evolution of dislocations in SiGe/Si(001) films can be controlled and confined along stripes aligned along pits carved in the substrate, leaving micrometric coherent areas free of dislocations. In this work, we have addressed the stability of such metastable areas versus, film thickness, different Ge contents (xGe = 10%-30%) and larger pit-pattern periods, revealing the flexibility and effectiveness of this method even for coherent areas of about 64 μm2. The thermal stability of such configuration has been finally verified by post-growth annealing treatment, in order to simulate device processing. Finally, l Raman spectroscopy and X-ray nanodiffraction have been used to characterize the periodic strain variations across the pattern.
Mondiali, V., Bollani, M., Chrastina, D., Rubert, R., Chahine, G., Richard, M., et al. (2014). Strain release management in SiGe/Si films by substrate patterning. APPLIED PHYSICS LETTERS, 105(24) [10.1063/1.4904455].
Strain release management in SiGe/Si films by substrate patterning
Cecchi, S;BONERA, EMILIANO;MIGLIO, LEONIDAUltimo
2014
Abstract
The nucleation and the evolution of dislocations in SiGe/Si(001) films can be controlled and confined along stripes aligned along pits carved in the substrate, leaving micrometric coherent areas free of dislocations. In this work, we have addressed the stability of such metastable areas versus, film thickness, different Ge contents (xGe = 10%-30%) and larger pit-pattern periods, revealing the flexibility and effectiveness of this method even for coherent areas of about 64 μm2. The thermal stability of such configuration has been finally verified by post-growth annealing treatment, in order to simulate device processing. Finally, l Raman spectroscopy and X-ray nanodiffraction have been used to characterize the periodic strain variations across the pattern.
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