We investigate the effect of surface Ga accumulation on the growth of In0.5Ga0.5N by PAMBE at low temperatures (T= 440 °C). We find that the control of the surface metal condition is very important because the crystallization process strongly depends on the metal flux impinging on the surface. The growth rate rapidly decreases when the supply of metal flux exceeds certain amount. Such phenomenon can be explained by the model taking into account droplet effects on the incorporation of metals adatom into the crystal.
Azadmand, M., Bietti, S., Barabani, L., Acciarri, M., BASSO BASSET, F., Bonera, E., et al. (2016). Growth Suppression by Metal Droplets of In0.5Ga0.5N/Si(111) at Low Temperatures. Intervento presentato a: MBE 2016, 19th International Conference on Molecular-Beam Epitaxy, Montpellier (France).
Growth Suppression by Metal Droplets of In0.5Ga0.5N/Si(111) at Low Temperatures
AZADMAND, MANI;BIETTI, SERGIO;ACCIARRI, MAURIZIO FILIPPO;BASSO BASSET, FRANCESCO;BONERA, EMILIANO;NOETZEL, RICHARD;SANGUINETTI, STEFANO
2016
Abstract
We investigate the effect of surface Ga accumulation on the growth of In0.5Ga0.5N by PAMBE at low temperatures (T= 440 °C). We find that the control of the surface metal condition is very important because the crystallization process strongly depends on the metal flux impinging on the surface. The growth rate rapidly decreases when the supply of metal flux exceeds certain amount. Such phenomenon can be explained by the model taking into account droplet effects on the incorporation of metals adatom into the crystal.
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