In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetrization is not a mandatory requirement for few quantum-well repetitions. Photoluminescence data, supported by a thorough theoretical modeling, allow us to unambiguously disentangle the spectral features of the quantum wells from those originating in the virtual substrate and to evaluate the impact on the optical properties of key parameters, such as quantum confinement, layer compositions, excess carrier density, and lattice strain. This detailed understanding of the radiative recombination processes is of paramount importance for the development of Ge/GeSi-based optical devices

Montanari, M., Virgilio, M., Manganelli, C., Zaumseil, P., Zoellner, M., Hou, Y., et al. (2018). Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells. PHYSICAL REVIEW. B, 98(19) [10.1103/PhysRevB.98.195310].

Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells

Vitiello, E.;Bonera, E.;Pezzoli, F.;
2018

Abstract

In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetrization is not a mandatory requirement for few quantum-well repetitions. Photoluminescence data, supported by a thorough theoretical modeling, allow us to unambiguously disentangle the spectral features of the quantum wells from those originating in the virtual substrate and to evaluate the impact on the optical properties of key parameters, such as quantum confinement, layer compositions, excess carrier density, and lattice strain. This detailed understanding of the radiative recombination processes is of paramount importance for the development of Ge/GeSi-based optical devices
Articolo in rivista - Articolo scientifico
Electronic, Optical and Magnetic Materials; Condensed Matter Physics;
English
2018
98
19
195310
reserved
Montanari, M., Virgilio, M., Manganelli, C., Zaumseil, P., Zoellner, M., Hou, Y., et al. (2018). Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells. PHYSICAL REVIEW. B, 98(19) [10.1103/PhysRevB.98.195310].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/212708
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