In the perspective of exploring alternative gate dielectrics for the future generation of microelectronic devices, we investigated experimentally and theoretically the interface energy barriers induced on (001) silicon by La2 Hf2 O7, whose growth has been recently attained by molecular-beam epitaxy. Experimental results show that the 5.6±0.1 eV band gap of La2 Hf2 O7 is aligned to the band gap of silicon with a valence band offset of 2.4±0.1 eV and a conduction band offset of 2.1±0.1 eV. Density functional theory calculations yield valence band offset values ranging between 1.8 and 2.4 eV. © 2006 American Institute of Physics.
Seguini, G., Spiga, S., Bonera, E., Fanciulli, M., Huamantinco, A., Forst, C., et al. (2006). Band alignment at the La2Hf2O7/(001)Si interface. APPLIED PHYSICS LETTERS, 88(20) [10.1063/1.2204572].
Band alignment at the La2Hf2O7/(001)Si interface
BONERA, EMILIANO;FANCIULLI, MARCO;
2006
Abstract
In the perspective of exploring alternative gate dielectrics for the future generation of microelectronic devices, we investigated experimentally and theoretically the interface energy barriers induced on (001) silicon by La2 Hf2 O7, whose growth has been recently attained by molecular-beam epitaxy. Experimental results show that the 5.6±0.1 eV band gap of La2 Hf2 O7 is aligned to the band gap of silicon with a valence band offset of 2.4±0.1 eV and a conduction band offset of 2.1±0.1 eV. Density functional theory calculations yield valence band offset values ranging between 1.8 and 2.4 eV. © 2006 American Institute of Physics.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
