The monolithic integration of photonic functionality into silicon microtechnology is widely advanced. Yet, there is no final solution for the realization of a light source compatible with the prevailing complementary metal-oxide-semiconductor technology. A lot of research effort focuses on germanium (Ge) on silicon (Si) heterostructures and tensile strain application to Ge is accepted as one feasible route to make Ge an efficient light emitter. Prior work has documented the special suitability of Ge membranes to reach the high tensile strain. We present a top-down approach for the creation of SiGe stressors on Ge micro-bridges and compare the obtained strain to the case of an attached bulk-like Ge layer. We could show that the Ge influenced by a SiGe stressor is under tensile strain; absolute strain values are of the order of 0.7% for both micro-bridge and bulk. The relative strain induced by the nanostructures in the micro-bridge is 1.3% due to the high sharing of elastic energy between nanostructures and bridges.

Barget, M., Lodari, M., Borriello, M., Mondiali, V., Chrastina, D., Bollani, M., et al. (2016). Tensile strain in Ge membranes induced by SiGe nanostressors. APPLIED PHYSICS LETTERS, 109(13) [10.1063/1.4963657].

Tensile strain in Ge membranes induced by SiGe nanostressors

BARGET, MICHAEL REINER
Primo
;
BONERA, EMILIANO
Ultimo
2016

Abstract

The monolithic integration of photonic functionality into silicon microtechnology is widely advanced. Yet, there is no final solution for the realization of a light source compatible with the prevailing complementary metal-oxide-semiconductor technology. A lot of research effort focuses on germanium (Ge) on silicon (Si) heterostructures and tensile strain application to Ge is accepted as one feasible route to make Ge an efficient light emitter. Prior work has documented the special suitability of Ge membranes to reach the high tensile strain. We present a top-down approach for the creation of SiGe stressors on Ge micro-bridges and compare the obtained strain to the case of an attached bulk-like Ge layer. We could show that the Ge influenced by a SiGe stressor is under tensile strain; absolute strain values are of the order of 0.7% for both micro-bridge and bulk. The relative strain induced by the nanostructures in the micro-bridge is 1.3% due to the high sharing of elastic energy between nanostructures and bridges.
Articolo in rivista - Articolo scientifico
germanium, strain, Raman, laser, spectroscopy, membrane, stress, SiGe, Ge;
English
Barget, M., Lodari, M., Borriello, M., Mondiali, V., Chrastina, D., Bollani, M., et al. (2016). Tensile strain in Ge membranes induced by SiGe nanostressors. APPLIED PHYSICS LETTERS, 109(13) [10.1063/1.4963657].
Barget, M; Lodari, M; Borriello, M; Mondiali, V; Chrastina, D; Bollani, M; Bonera, E
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/135436
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