The preparation and the properties of the silicon nanoclusters embedded in thin silicon oxide layers were studied. All the annealed samples of the nanoclusters had shown a broad photoluminescence spectrum with increasing intensity as a function of annealing time. The use of a dual beam time of flight secondary ion mass spectrometry had allowed to observe variations in Si- signal due to excess of silicon atoms introduced by implantation.

Perego, M., Ferrari, S., Spiga, S., Bonera, E., Fanciulli, M., Soncini, V. (2003). Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers. APPLIED PHYSICS LETTERS, 82(1), 121-123 [10.1063/1.1534937].

Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers

BONERA, EMILIANO;FANCIULLI, MARCO;
2003

Abstract

The preparation and the properties of the silicon nanoclusters embedded in thin silicon oxide layers were studied. All the annealed samples of the nanoclusters had shown a broad photoluminescence spectrum with increasing intensity as a function of annealing time. The use of a dual beam time of flight secondary ion mass spectrometry had allowed to observe variations in Si- signal due to excess of silicon atoms introduced by implantation.
Articolo in rivista - Articolo scientifico
Time of flight secondary ion mass spectrometry; nanoclusters
English
2003
82
1
121
123
none
Perego, M., Ferrari, S., Spiga, S., Bonera, E., Fanciulli, M., Soncini, V. (2003). Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers. APPLIED PHYSICS LETTERS, 82(1), 121-123 [10.1063/1.1534937].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/23513
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