Bicocca Open Archive

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NOETZEL, RICHARD
 Distribuzione geografica
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Continente #
AS - Asia 10.162
NA - Nord America 6.594
EU - Europa 2.161
SA - Sud America 1.704
Continente sconosciuto - Info sul continente non disponibili 601
AF - Africa 209
OC - Oceania 8
Totale 21.439
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Nazione #
US - Stati Uniti d'America 6.232
VN - Vietnam 3.238
SG - Singapore 2.827
CN - Cina 2.001
BR - Brasile 1.294
IT - Italia 994
HK - Hong Kong 725
KR - Corea 405
BD - Bangladesh 330
FR - Francia 237
CA - Canada 195
DE - Germania 167
AR - Argentina 164
RU - Federazione Russa 149
IN - India 142
GB - Regno Unito 95
SE - Svezia 87
EC - Ecuador 84
IQ - Iraq 83
IE - Irlanda 77
AT - Austria 76
UA - Ucraina 75
MX - Messico 69
TR - Turchia 62
ID - Indonesia 57
ZA - Sudafrica 55
FI - Finlandia 47
SA - Arabia Saudita 47
PK - Pakistan 43
MA - Marocco 40
NL - Olanda 39
VE - Venezuela 36
CO - Colombia 35
UZ - Uzbekistan 32
CR - Costa Rica 28
PY - Paraguay 27
CL - Cile 26
ES - Italia 24
TN - Tunisia 24
PH - Filippine 22
EG - Egitto 21
JM - Giamaica 20
JP - Giappone 19
PE - Perù 17
DK - Danimarca 16
ET - Etiopia 16
KE - Kenya 16
JO - Giordania 15
PL - Polonia 15
MY - Malesia 14
NI - Nicaragua 12
UY - Uruguay 12
OM - Oman 10
BE - Belgio 9
BG - Bulgaria 9
DO - Repubblica Dominicana 9
NP - Nepal 9
TW - Taiwan 9
AU - Australia 8
AZ - Azerbaigian 8
CI - Costa d'Avorio 8
IL - Israele 8
AL - Albania 7
BH - Bahrain 7
BO - Bolivia 7
HN - Honduras 7
LB - Libano 6
SN - Senegal 6
AE - Emirati Arabi Uniti 5
CZ - Repubblica Ceca 5
PS - Palestinian Territory 5
QA - Qatar 5
TH - Thailandia 5
TT - Trinidad e Tobago 5
BA - Bosnia-Erzegovina 4
BW - Botswana 4
CH - Svizzera 4
DZ - Algeria 4
KW - Kuwait 4
KZ - Kazakistan 4
PA - Panama 4
PT - Portogallo 4
RS - Serbia 4
SY - Repubblica araba siriana 4
GA - Gabon 3
GR - Grecia 3
GT - Guatemala 3
IR - Iran 3
MU - Mauritius 3
NG - Nigeria 3
BY - Bielorussia 2
GE - Georgia 2
HR - Croazia 2
LT - Lituania 2
LV - Lettonia 2
PR - Porto Rico 2
RO - Romania 2
SC - Seychelles 2
SK - Slovacchia (Repubblica Slovacca) 2
SV - El Salvador 2
Totale 20.818
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Città #
Singapore 1.176
Ho Chi Minh City 1.005
Hanoi 821
Hefei 762
San Jose 734
Hong Kong 714
Ashburn 681
Seoul 393
Milan 387
Council Bluffs 335
Chicago 241
Ann Arbor 223
Los Angeles 190
Woodbridge 170
Lauterbourg 167
Beijing 129
Rome 129
Fairfield 124
São Paulo 118
Buffalo 115
Dallas 114
Toronto 107
Houston 104
Da Nang 98
Haiphong 97
Ha Long 95
New York 94
Santa Clara 89
Jacksonville 77
Wilmington 75
Dublin 73
Chandler 71
Seattle 67
Cambridge 59
Biên Hòa 58
Hải Dương 58
Rio de Janeiro 57
Boardman 56
Guangzhou 55
Vienna 51
Frankfurt am Main 50
Can Tho 48
Thái Nguyên 48
Quận Bình Thạnh 47
Bắc Ninh 46
Ninh Bình 44
Phoenix 44
Dearborn 43
Mexico City 39
Baghdad 36
Quận Một 36
Nanjing 35
Philadelphia 35
Vũng Tàu 33
Munich 32
Bắc Giang 30
Figino 30
Turin 30
Orem 28
Princeton 28
Atlanta 27
Brasília 27
Guayaquil 27
Shanghai 27
Tashkent 27
Belo Horizonte 26
Montreal 26
Vinh 26
Phủ Lý 25
Quito 24
Dhaka 23
Brooklyn 21
Miami 21
Quận Phú Nhuận 20
Quận Sáu 20
Amsterdam 18
Falkenstein 18
San José 18
Thái Bình 18
Điện Bàn 18
Columbus 17
Des Moines 17
Dong Ket 17
Goiânia 17
Helsinki 17
Jeddah 17
Las Vegas 17
Moscow 17
Salt Lake City 17
Addis Ababa 16
Baltimore 16
Porto Alegre 16
Salvador 16
Caracas 15
Casablanca 15
Curitiba 15
Istanbul 15
Johannesburg 15
Quận Tân Phú 15
Riyadh 15
Totale 11.710
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Nome #
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors 503
Dual-wavelength passive and hybrid modelocking of 3, 4.5 and 10 GHz InAs/InP (100) quantum dot lasers 438
Size-dependent exciton g factor in self-assembled InAs/InP quantum dots 392
Growth Suppression by Metal Droplets of In0.5Ga0.5N/Si(111) at Low Temperatures 370
Single-nanostructure bandgap engineering enabled by magnetic-pulling thermal evaporation growth 363
InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides 345
Raman spectroscopy of epitaxial InGaN/Si in the central composition range 321
A photodetector for red and green with balanced negative and positive photocurrent for imaging is realized 308
1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy 277
Ga crystallization dynamics during annealing of self-assisted GaAs nanowires 277
1.55 μm InAs quantum dot distribution on truncated InP pyramids and regrowth by selective area epitaxy 261
Ehrlich-Schwöbel effect on the growth dynamics of GaAs(111)A surfaces 257
Recombination kinetics of InAs quantum dots: role of thermalization in dark states 243
Site-controlled Ag nanocrystals grown by molecular beam epitaxy - Towards plasmonic integration technology 231
Epitaxial InN/InGaN quantum dots on Si: Cl% anion selectivity and pseudocapacitor behavior 231
Exciton dark states in the recombination kinetics of InAs quantum dots 230
Gain and phase dynamics of an InAs/InGaAsP/InP quantum-dot semiconductor optical amplifier at 1.55 μm 225
Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces 218
Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires 216
Quantum dot decoherence measured by ensemble photoluminescence 214
Carrier recombination kinetics in (311)A InGaAs sidewall quantum wires 213
Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal 203
Temperature activated coupling in topologically distinct semiconductor nanostructures 196
Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots 170
Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate 168
Temperature and Source Flux Dependence of Light Emission, In Incorporation and Quantum Confinement in Self-Formed Core-Shell InGaN Nanowires 160
Wood-derived electrode supporting CVD-grown ReS2 for efficient and stable hydrogen production 154
Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates 149
From localization to quantum-dot chains in self-formed core-shell InGaN nanowires emitting in the red 146
ZIF-67 with Argon annealing treatment for visible light responsive degradation of organic dyes in a wide pH range 140
Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling 133
Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics 131
Fast self-powered n-InGaN layer/p-Cu2O microcrystal visible-light photoelectrochemical photodetector with high photocurrent and responsivity 127
Erratum: Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector (IEEE Transactions on Electron Devices (2022) 69:11 (6184-6187) DOI: 10.1109/TED.2022.3206181) 127
Sign reversal of visible to UV photocurrent in core-shell n-InGaN/p-GaN nanowire photodetectors 125
Uniform low-to-high in composition InGaN layers grown on Si 124
Highly sensitive and fast anion-selective InN quantum dot electrochemical sensors 122
Noise logic with an InGaN/SiNx/Si uniband diode photodetector 122
3D InGaN nanowire arrays on oblique pyramid-textured Si (311) for light trapping and solar water splitting enhancement 121
InN/InGaN Quantum Dot Abiotic One-Compartment Glucose Photofuel Cell: Power Supply and Sensing 120
Evidence of two-dimensional lateral quantum confinement in self-formed core-shell InGaN nanowires on Si (111) emitting in the red 119
In Desorption in InGaN Nanowire Growth on Si Generates a Unique Light Emitter: From In-Rich InGaN to the Intermediate Core-Shell InGaN to Pure GaN 118
Comparison of InN/InGaN quantum dot and nanowire hydrogen peroxide and glucose photofuel cells: A case study 114
(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN 113
Super-Nernstian potentiometric response of InN/InGaN quantum dots by fractional electron transfer 112
Red InGaN nanowire LED with bulk active region directly grown on p-Si (111) 111
InP-based monolithically integrated tunable wavelength filters in the 1.6-1.8 μ m wavelength region for tunable laser purposes 111
Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector 108
Optothermal tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities 108
Near-infrared InN quantum dots on high-In composition InGaN 107
Transition from Metal-Rich to N-Rich Growth for Core-Shell InGaN Nanowires on Si (111) at the Onset of In Desorption 106
Transfer printing and nanomanipulating luminescent photonic crystal membrane nanocavities 105
Ultraviolet photoelectrochemical photodetector based on GaN/Cu2O core-shell nanowire p-n heterojunctions 105
InAs/InP quantum dots, dashes, and ordered arrays 105
An InN/InGaN quantum dot nonlinear constant phase element 105
Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p-n junctions 102
InP/InGaAs photodetector on SOI photonic circuitry 101
Self-formed core–shell InGaN nanowires: A dual-functional platform for persistent photoconductivity and self-driven photodetection 101
Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy 101
Acoustic carrier transport in InP-based structures 100
Integrated 2×2 quantum dot optical crossbar switch in 1.55m wavelength range 100
Planar GaN/Cu2O Microcrystal Composite Junction Photoanode for Efficient Solar Water Splitting 99
Synthesis of barbituric acid doped carbon nitride for efficient solar-driven photocatalytic degradation of aniline 97
160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network 97
InP/InGaAs photodetector on SOI circuitry 97
Cu2O as hole injection layer on In-rich InGaN nanowires 97
Tuning of narrow-bandwidth photonic crystal devices etched in InGaAsP planar waveguides by Liquid Crystal infiltration 95
Scalable quantum dot based optical interconnects 94
Electromechanical wavelength tuning of double-membrane photonic crystal cavities 94
InAs/InP(100) quantum dot waveguide photodetectors for swept-source optical coherence tomography around 1.7 μm 93
Integrated tunable quantum dot laser for optical coherence tomography in the 1.7μm wavelength region 93
Coupling of InAs/InP quantum dots to the plasmon resonance of in nanoparticles grown by metal-organic vapor phase epitaxy 92
Giant super-Nernstian potentiometric response of InN quantum dots on self-formed core-shell InGaN nanowires 91
Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxy 91
Spectrally encoded photonic crystal nanocavities by independent lithographic mode tuning 90
Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots 90
InGaAsP photonic crystal slot nanobeam waveguides for refractive index sensing 90
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111) 90
Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 μm 90
An InGaN/SiN x/Si Uniband Diode 90
Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range 90
An InN/InGaN quantum dot electrochemical biosensor for clinical diagnosis 89
Cyclic voltammetry for morphological analysis of InGaN epitaxial layers and nanostructures 89
Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy 89
Formation of linear InAs/InGaAsP/InP (1 0 0) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy 89
Wavelength-sized cavities in high aspect InP/InGaAsP/InP photonic crystals 88
Passively mode-locked 4.6 and 10.5GHz quantum dot laser diodes around 1.55m with large operating regime 88
Resonant biexciton quantum-dot cavity coupling and its potential for a fast 1.55- m-telecom-band single photon source 88
Spontaneous formation of InGaN nanowall network directly on Si 88
Observation of Dynamics in a 5 GHz Passively Mode-locked InAs/InP (100) Quantum Dot Ring Laser at 1.5 μm 87
Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays 87
Low power penalty monolithically-cascaded 1550nm-wavelength quantum-dot crossbar switches 86
Monolithic multistage optical switch operating at 160 Gb/s line rate 85
Anisotropic Piezoelectric Response from InGaN Nanowires with Spatially Modulated Composition and Topography over a Textured Si(100) Substrate 84
In situ optofluidic control of reconfigurable photonic crystal cavities 84
Controlling mode degeneracy in a photonic crystal nanocavity with infiltrated liquid crystal 83
In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties 83
Modelocked and tunable InAs/InP (100) quantum dot lasers in the 1.5 μm to 1.8 μm region 83
A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy 83
Quantum Dots for Future Nanophotonic Devices: Lateral Ordering, Position, and Number Control 83
Totale 14.619
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Categoria #
all - tutte 55.116
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 55.116
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022101 0 0 0 8 8 8 13 9 5 8 14 28
2022/2023264 32 75 20 14 17 40 3 20 22 2 13 6
2023/2024158 5 6 11 2 13 40 43 2 20 0 2 14
2024/20252.689 14 51 18 16 37 20 23 28 36 51 1.192 1.203
2025/202614.032 2.241 2.406 1.154 1.763 795 372 1.094 672 854 917 468 1.296
2026/20272.810 630 462 1.445 273 0 0 0 0 0 0 0 0
Totale 21.439