Bicocca Open Archive

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NOETZEL, RICHARD
 Distribuzione geografica
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Continente #
AS - Asia 10.124
NA - Nord America 4.255
EU - Europa 2.046
SA - Sud America 1.695
AF - Africa 208
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 3
Totale 18.338
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Nazione #
US - Stati Uniti d'America 3.954
VN - Vietnam 3.238
SG - Singapore 2.818
CN - Cina 1.992
BR - Brasile 1.291
IT - Italia 918
HK - Hong Kong 722
KR - Corea 403
BD - Bangladesh 324
FR - Francia 232
CA - Canada 169
AR - Argentina 162
RU - Federazione Russa 149
DE - Germania 148
IN - India 142
GB - Regno Unito 87
SE - Svezia 87
IQ - Iraq 83
EC - Ecuador 81
IE - Irlanda 77
AT - Austria 76
UA - Ucraina 75
MX - Messico 66
TR - Turchia 62
ID - Indonesia 56
ZA - Sudafrica 55
FI - Finlandia 47
SA - Arabia Saudita 43
PK - Pakistan 42
MA - Marocco 40
VE - Venezuela 36
CO - Colombia 35
NL - Olanda 35
UZ - Uzbekistan 32
PY - Paraguay 27
CL - Cile 26
TN - Tunisia 24
ES - Italia 23
PH - Filippine 22
EG - Egitto 21
JP - Giappone 18
PE - Perù 17
DK - Danimarca 16
ET - Etiopia 16
KE - Kenya 16
CR - Costa Rica 15
JM - Giamaica 15
JO - Giordania 15
PL - Polonia 15
MY - Malesia 14
UY - Uruguay 12
OM - Oman 10
BG - Bulgaria 9
NP - Nepal 9
AZ - Azerbaigian 8
BE - Belgio 8
CI - Costa d'Avorio 8
DO - Repubblica Dominicana 8
IL - Israele 8
NI - Nicaragua 8
AL - Albania 7
AU - Australia 7
BH - Bahrain 7
BO - Bolivia 7
TW - Taiwan 7
LB - Libano 6
SN - Senegal 6
AE - Emirati Arabi Uniti 5
CZ - Repubblica Ceca 5
HN - Honduras 5
PS - Palestinian Territory 5
QA - Qatar 5
TH - Thailandia 5
BA - Bosnia-Erzegovina 4
BW - Botswana 4
DZ - Algeria 4
KW - Kuwait 4
KZ - Kazakistan 4
PA - Panama 4
PT - Portogallo 4
RS - Serbia 4
SY - Repubblica araba siriana 4
CH - Svizzera 3
GA - Gabon 3
GR - Grecia 3
GT - Guatemala 3
IR - Iran 3
MU - Mauritius 3
NG - Nigeria 3
TT - Trinidad e Tobago 3
BY - Bielorussia 2
GE - Georgia 2
HR - Croazia 2
LT - Lituania 2
LV - Lettonia 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
SV - El Salvador 2
XK - ???statistics.table.value.countryCode.XK??? 2
BB - Barbados 1
Totale 18.321
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Città #
Singapore 1.172
Ho Chi Minh City 1.005
Hanoi 821
Hefei 762
Hong Kong 711
San Jose 559
Seoul 393
Milan 352
Ashburn 322
Chicago 235
Ann Arbor 223
Los Angeles 178
Woodbridge 169
Lauterbourg 167
Beijing 126
Fairfield 124
Rome 122
São Paulo 118
Buffalo 109
Toronto 105
Houston 101
Da Nang 98
Haiphong 97
Dallas 96
Ha Long 95
New York 81
Wilmington 74
Dublin 73
Jacksonville 72
Chandler 71
Council Bluffs 64
Seattle 60
Biên Hòa 58
Cambridge 58
Hải Dương 58
Rio de Janeiro 57
Boardman 56
Guangzhou 55
Santa Clara 52
Vienna 51
Frankfurt am Main 49
Can Tho 48
Thái Nguyên 48
Quận Bình Thạnh 47
Bắc Ninh 46
Ninh Bình 44
Dearborn 43
Mexico City 37
Baghdad 36
Quận Một 36
Nanjing 35
Vũng Tàu 33
Munich 32
Bắc Giang 30
Orem 28
Princeton 28
Turin 28
Tashkent 27
Belo Horizonte 26
Guayaquil 26
Shanghai 26
Vinh 26
Brasília 25
Phủ Lý 25
Figino 24
Dhaka 23
Montreal 23
Quito 23
Quận Phú Nhuận 20
Quận Sáu 20
Amsterdam 18
Falkenstein 18
Thái Bình 18
Điện Bàn 18
Des Moines 17
Dong Ket 17
Goiânia 17
Helsinki 17
Moscow 17
Philadelphia 17
Addis Ababa 16
Jeddah 16
Phoenix 16
Porto Alegre 16
Salvador 16
Atlanta 15
Caracas 15
Casablanca 15
Curitiba 15
Istanbul 15
Johannesburg 15
Quận Tân Phú 15
Riyadh 15
Tampa 15
Amman 14
Brooklyn 14
Lima 14
Salt Lake City 14
Tokyo 14
Huế 13
Totale 10.634
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Nome #
Dual-wavelength passive and hybrid modelocking of 3, 4.5 and 10 GHz InAs/InP (100) quantum dot lasers 420
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors 408
Size-dependent exciton g factor in self-assembled InAs/InP quantum dots 381
Single-nanostructure bandgap engineering enabled by magnetic-pulling thermal evaporation growth 352
Growth Suppression by Metal Droplets of In0.5Ga0.5N/Si(111) at Low Temperatures 346
InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides 336
Raman spectroscopy of epitaxial InGaN/Si in the central composition range 301
A photodetector for red and green with balanced negative and positive photocurrent for imaging is realized 282
1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy 264
Ga crystallization dynamics during annealing of self-assisted GaAs nanowires 255
1.55 μm InAs quantum dot distribution on truncated InP pyramids and regrowth by selective area epitaxy 248
Ehrlich-Schwöbel effect on the growth dynamics of GaAs(111)A surfaces 240
Recombination kinetics of InAs quantum dots: role of thermalization in dark states 231
Epitaxial InN/InGaN quantum dots on Si: Cl% anion selectivity and pseudocapacitor behavior 221
Site-controlled Ag nanocrystals grown by molecular beam epitaxy - Towards plasmonic integration technology 220
Exciton dark states in the recombination kinetics of InAs quantum dots 215
Gain and phase dynamics of an InAs/InGaAsP/InP quantum-dot semiconductor optical amplifier at 1.55 μm 212
Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces 203
Quantum dot decoherence measured by ensemble photoluminescence 201
Carrier recombination kinetics in (311)A InGaAs sidewall quantum wires 200
Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires 190
Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal 188
Temperature activated coupling in topologically distinct semiconductor nanostructures 188
Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots 162
Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate 158
Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates 143
Wood-derived electrode supporting CVD-grown ReS2 for efficient and stable hydrogen production 141
Temperature and Source Flux Dependence of Light Emission, In Incorporation and Quantum Confinement in Self-Formed Core-Shell InGaN Nanowires 134
Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling 122
From localization to quantum-dot chains in self-formed core-shell InGaN nanowires emitting in the red 121
Erratum: Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector (IEEE Transactions on Electron Devices (2022) 69:11 (6184-6187) DOI: 10.1109/TED.2022.3206181) 118
ZIF-67 with Argon annealing treatment for visible light responsive degradation of organic dyes in a wide pH range 116
Uniform low-to-high in composition InGaN layers grown on Si 109
Highly sensitive and fast anion-selective InN quantum dot electrochemical sensors 108
InN/InGaN Quantum Dot Abiotic One-Compartment Glucose Photofuel Cell: Power Supply and Sensing 108
Fast self-powered n-InGaN layer/p-Cu2O microcrystal visible-light photoelectrochemical photodetector with high photocurrent and responsivity 107
3D InGaN nanowire arrays on oblique pyramid-textured Si (311) for light trapping and solar water splitting enhancement 107
Noise logic with an InGaN/SiNx/Si uniband diode photodetector 106
Sign reversal of visible to UV photocurrent in core-shell n-InGaN/p-GaN nanowire photodetectors 104
Comparison of InN/InGaN quantum dot and nanowire hydrogen peroxide and glucose photofuel cells: A case study 103
Evidence of two-dimensional lateral quantum confinement in self-formed core-shell InGaN nanowires on Si (111) emitting in the red 103
Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics 101
InP-based monolithically integrated tunable wavelength filters in the 1.6-1.8 μ m wavelength region for tunable laser purposes 100
Red InGaN nanowire LED with bulk active region directly grown on p-Si (111) 99
(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN 99
In Desorption in InGaN Nanowire Growth on Si Generates a Unique Light Emitter: From In-Rich InGaN to the Intermediate Core-Shell InGaN to Pure GaN 98
Super-Nernstian potentiometric response of InN/InGaN quantum dots by fractional electron transfer 97
Integrated 2×2 quantum dot optical crossbar switch in 1.55m wavelength range 96
Near-infrared InN quantum dots on high-In composition InGaN 95
Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p-n junctions 94
An InN/InGaN quantum dot nonlinear constant phase element 93
160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network 92
Optothermal tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities 92
InAs/InP quantum dots, dashes, and ordered arrays 92
InP/InGaAs photodetector on SOI photonic circuitry 90
Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector 90
Transition from Metal-Rich to N-Rich Growth for Core-Shell InGaN Nanowires on Si (111) at the Onset of In Desorption 90
Ultraviolet photoelectrochemical photodetector based on GaN/Cu2O core-shell nanowire p-n heterojunctions 89
Planar GaN/Cu2O Microcrystal Composite Junction Photoanode for Efficient Solar Water Splitting 89
Acoustic carrier transport in InP-based structures 87
InP/InGaAs photodetector on SOI circuitry 86
Cu2O as hole injection layer on In-rich InGaN nanowires 86
Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy 86
Spectrally encoded photonic crystal nanocavities by independent lithographic mode tuning 85
Integrated tunable quantum dot laser for optical coherence tomography in the 1.7μm wavelength region 84
Scalable quantum dot based optical interconnects 84
Transfer printing and nanomanipulating luminescent photonic crystal membrane nanocavities 83
Tuning of narrow-bandwidth photonic crystal devices etched in InGaAsP planar waveguides by Liquid Crystal infiltration 82
Spontaneous formation of InGaN nanowall network directly on Si 81
Coupling of InAs/InP quantum dots to the plasmon resonance of in nanoparticles grown by metal-organic vapor phase epitaxy 81
Electromechanical wavelength tuning of double-membrane photonic crystal cavities 80
Wavelength-sized cavities in high aspect InP/InGaAsP/InP photonic crystals 79
Resonant biexciton quantum-dot cavity coupling and its potential for a fast 1.55- m-telecom-band single photon source 79
Observation of Dynamics in a 5 GHz Passively Mode-locked InAs/InP (100) Quantum Dot Ring Laser at 1.5 μm 79
Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxy 79
InGaAsP photonic crystal slot nanobeam waveguides for refractive index sensing 79
Cyclic voltammetry for morphological analysis of InGaN epitaxial layers and nanostructures 78
Formation of linear InAs/InGaAsP/InP (1 0 0) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy 78
Low power penalty monolithically-cascaded 1550nm-wavelength quantum-dot crossbar switches 78
InAs/InP(100) quantum dot waveguide photodetectors for swept-source optical coherence tomography around 1.7 μm 77
Controlling mode degeneracy in a photonic crystal nanocavity with infiltrated liquid crystal 77
Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy 77
In situ optofluidic control of reconfigurable photonic crystal cavities 77
Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 μm 77
An InGaN/SiN x/Si Uniband Diode 77
Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range 77
On the super-Nernstian potentiometric response of InN/InGaN quantum dots 76
Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays 76
Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots 76
Dual wavelength mode-locking of InAs/InP quantum dot laser diodes at 1.5μm 76
Semiconductor nanostructures towards electronic and optoelectronic device applications II (Symposium K, E-MRS 2009 Spring Meeting) 75
Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal 75
CW operation of a subwavelength metal-semiconductor nanolaser at record high temperature under electrical injection 75
Monolithic multistage optical switch operating at 160 Gb/s line rate 74
Anisotropic Piezoelectric Response from InGaN Nanowires with Spatially Modulated Composition and Topography over a Textured Si(100) Substrate 74
An InN/InGaN quantum dot electrochemical biosensor for clinical diagnosis 74
Local digital etching and infiltration for tuning of a H1- Cavity in deeply etched InP/InGaAsP/InP photonic crystals 74
Ordered 1-D and 2-D InAs/InP quantum dot arrays at telecom wavelength 73
Nanowire superconducting single-photon detectors integrated with optical microcavities based on GaAs substrates 73
Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint 73
Totale 13.185
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Categoria #
all - tutte 46.756
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 46.756
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022161 11 22 27 8 8 8 13 9 5 8 14 28
2022/2023264 32 75 20 14 17 40 3 20 22 2 13 6
2023/2024158 5 6 11 2 13 40 43 2 20 0 2 14
2024/20252.689 14 51 18 16 37 20 23 28 36 51 1.192 1.203
2025/202614.032 2.241 2.406 1.154 1.763 795 372 1.094 672 854 917 468 1.296
2026/2027307 307 0 0 0 0 0 0 0 0 0 0 0
Totale 18.936