Bicocca Open Archive

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NOETZEL, RICHARD
 Distribuzione geografica
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Continente #
AS - Asia 9.873
NA - Nord America 3.391
SA - Sud America 1.694
EU - Europa 1.257
AF - Africa 208
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 3
Totale 16.431
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Nazione #
US - Stati Uniti d'America 3.215
VN - Vietnam 3.189
SG - Singapore 2.812
CN - Cina 1.989
BR - Brasile 1.290
HK - Hong Kong 722
KR - Corea 401
FR - Francia 231
AR - Argentina 162
RU - Federazione Russa 149
DE - Germania 144
IT - Italia 142
IN - India 141
BD - Bangladesh 136
GB - Regno Unito 87
SE - Svezia 87
IQ - Iraq 83
EC - Ecuador 81
IE - Irlanda 77
AT - Austria 76
UA - Ucraina 75
MX - Messico 66
CA - Canada 62
TR - Turchia 62
ID - Indonesia 56
ZA - Sudafrica 55
FI - Finlandia 47
SA - Arabia Saudita 43
PK - Pakistan 42
MA - Marocco 40
VE - Venezuela 36
CO - Colombia 35
NL - Olanda 35
UZ - Uzbekistan 32
PY - Paraguay 27
CL - Cile 26
TN - Tunisia 24
PH - Filippine 22
EG - Egitto 21
ES - Italia 19
JP - Giappone 18
PE - Perù 17
ET - Etiopia 16
KE - Kenya 16
DK - Danimarca 15
JO - Giordania 15
PL - Polonia 15
MY - Malesia 12
UY - Uruguay 12
CR - Costa Rica 10
OM - Oman 10
JM - Giamaica 9
NP - Nepal 9
AZ - Azerbaigian 8
BE - Belgio 8
BG - Bulgaria 8
CI - Costa d'Avorio 8
DO - Repubblica Dominicana 8
IL - Israele 8
AL - Albania 7
BH - Bahrain 7
BO - Bolivia 7
TW - Taiwan 7
LB - Libano 6
SN - Senegal 6
AE - Emirati Arabi Uniti 5
AU - Australia 5
CZ - Repubblica Ceca 5
NI - Nicaragua 5
PS - Palestinian Territory 5
QA - Qatar 5
TH - Thailandia 5
BA - Bosnia-Erzegovina 4
BW - Botswana 4
DZ - Algeria 4
HN - Honduras 4
KW - Kuwait 4
KZ - Kazakistan 4
PA - Panama 4
PT - Portogallo 4
RS - Serbia 4
SY - Repubblica araba siriana 4
GA - Gabon 3
GR - Grecia 3
IR - Iran 3
MU - Mauritius 3
NG - Nigeria 3
BY - Bielorussia 2
CH - Svizzera 2
GE - Georgia 2
GT - Guatemala 2
HR - Croazia 2
LT - Lituania 2
LV - Lettonia 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
SV - El Salvador 2
TT - Trinidad e Tobago 2
XK - ???statistics.table.value.countryCode.XK??? 2
BB - Barbados 1
Totale 16.416
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Città #
Singapore 1.168
Ho Chi Minh City 993
Hanoi 799
Hefei 762
Hong Kong 711
San Jose 530
Seoul 393
Ashburn 280
Chicago 225
Ann Arbor 223
Woodbridge 168
Lauterbourg 167
Los Angeles 148
Beijing 124
Fairfield 124
São Paulo 117
Buffalo 101
Haiphong 97
Da Nang 96
Ha Long 95
Houston 90
Dallas 89
Dublin 73
Wilmington 73
Chandler 71
Jacksonville 64
Biên Hòa 58
Cambridge 58
Hải Dương 58
Seattle 58
Rio de Janeiro 57
Guangzhou 55
New York 53
Vienna 51
Frankfurt am Main 49
Can Tho 48
Thái Nguyên 48
Quận Bình Thạnh 47
Bắc Ninh 46
Milan 45
Santa Clara 45
Ninh Bình 44
Dearborn 43
Mexico City 37
Baghdad 36
Quận Một 36
Nanjing 35
Council Bluffs 33
Vũng Tàu 33
Munich 32
Bắc Giang 30
Orem 28
Princeton 28
Tashkent 27
Belo Horizonte 26
Guayaquil 26
Shanghai 26
Vinh 26
Brasília 25
Phủ Lý 25
Dhaka 23
Quito 23
Quận Phú Nhuận 20
Quận Sáu 20
Amsterdam 18
Falkenstein 18
Montreal 18
Thái Bình 18
Điện Bàn 18
Dong Ket 17
Goiânia 17
Helsinki 17
Moscow 17
Addis Ababa 16
Des Moines 16
Jeddah 16
Porto Alegre 16
Salvador 16
Toronto 16
Caracas 15
Casablanca 15
Curitiba 15
Istanbul 15
Johannesburg 15
Quận Tân Phú 15
Riyadh 15
Tampa 15
Amman 14
Lima 14
Tokyo 14
Huế 13
Lahore 13
Lawrence 13
Nairobi 13
Nuremberg 13
Thu Dau Mot 13
Atlanta 12
Bogotá 12
Buenos Aires 12
Chennai 12
Totale 9.781
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Nome #
Dual-wavelength passive and hybrid modelocking of 3, 4.5 and 10 GHz InAs/InP (100) quantum dot lasers 409
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors 400
Size-dependent exciton g factor in self-assembled InAs/InP quantum dots 372
Single-nanostructure bandgap engineering enabled by magnetic-pulling thermal evaporation growth 346
InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides 335
Growth Suppression by Metal Droplets of In0.5Ga0.5N/Si(111) at Low Temperatures 330
Raman spectroscopy of epitaxial InGaN/Si in the central composition range 284
1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy 250
1.55 μm InAs quantum dot distribution on truncated InP pyramids and regrowth by selective area epitaxy 242
A photodetector for red and green with balanced negative and positive photocurrent for imaging is realized 234
Ga crystallization dynamics during annealing of self-assisted GaAs nanowires 232
Ehrlich-Schwöbel effect on the growth dynamics of GaAs(111)A surfaces 228
Site-controlled Ag nanocrystals grown by molecular beam epitaxy - Towards plasmonic integration technology 218
Epitaxial InN/InGaN quantum dots on Si: Cl% anion selectivity and pseudocapacitor behavior 217
Recombination kinetics of InAs quantum dots: role of thermalization in dark states 213
Gain and phase dynamics of an InAs/InGaAsP/InP quantum-dot semiconductor optical amplifier at 1.55 μm 202
Exciton dark states in the recombination kinetics of InAs quantum dots 201
Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces 192
Quantum dot decoherence measured by ensemble photoluminescence 190
Carrier recombination kinetics in (311)A InGaAs sidewall quantum wires 186
Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal 182
Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires 181
Temperature activated coupling in topologically distinct semiconductor nanostructures 174
Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots 155
Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate 148
Wood-derived electrode supporting CVD-grown ReS2 for efficient and stable hydrogen production 140
Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates 135
Temperature and Source Flux Dependence of Light Emission, In Incorporation and Quantum Confinement in Self-Formed Core-Shell InGaN Nanowires 128
Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling 111
From localization to quantum-dot chains in self-formed core-shell InGaN nanowires emitting in the red 109
Erratum: Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector (IEEE Transactions on Electron Devices (2022) 69:11 (6184-6187) DOI: 10.1109/TED.2022.3206181) 103
InN/InGaN Quantum Dot Abiotic One-Compartment Glucose Photofuel Cell: Power Supply and Sensing 103
Fast self-powered n-InGaN layer/p-Cu2O microcrystal visible-light photoelectrochemical photodetector with high photocurrent and responsivity 100
3D InGaN nanowire arrays on oblique pyramid-textured Si (311) for light trapping and solar water splitting enhancement 99
InP-based monolithically integrated tunable wavelength filters in the 1.6-1.8 μ m wavelength region for tunable laser purposes 97
Sign reversal of visible to UV photocurrent in core-shell n-InGaN/p-GaN nanowire photodetectors 96
Noise logic with an InGaN/SiNx/Si uniband diode photodetector 93
Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics 92
Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p-n junctions 89
Red InGaN nanowire LED with bulk active region directly grown on p-Si (111) 89
In Desorption in InGaN Nanowire Growth on Si Generates a Unique Light Emitter: From In-Rich InGaN to the Intermediate Core-Shell InGaN to Pure GaN 89
Evidence of two-dimensional lateral quantum confinement in self-formed core-shell InGaN nanowires on Si (111) emitting in the red 88
160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network 87
Super-Nernstian potentiometric response of InN/InGaN quantum dots by fractional electron transfer 87
ZIF-67 with Argon annealing treatment for visible light responsive degradation of organic dyes in a wide pH range 85
(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN 85
An InN/InGaN quantum dot nonlinear constant phase element 84
Ultraviolet photoelectrochemical photodetector based on GaN/Cu2O core-shell nanowire p-n heterojunctions 83
Planar GaN/Cu2O Microcrystal Composite Junction Photoanode for Efficient Solar Water Splitting 81
Tuning of narrow-bandwidth photonic crystal devices etched in InGaAsP planar waveguides by Liquid Crystal infiltration 81
Transfer printing and nanomanipulating luminescent photonic crystal membrane nanocavities 80
Comparison of InN/InGaN quantum dot and nanowire hydrogen peroxide and glucose photofuel cells: A case study 80
Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector 80
Acoustic carrier transport in InP-based structures 80
Transition from Metal-Rich to N-Rich Growth for Core-Shell InGaN Nanowires on Si (111) at the Onset of In Desorption 80
Integrated tunable quantum dot laser for optical coherence tomography in the 1.7μm wavelength region 77
Integrated 2×2 quantum dot optical crossbar switch in 1.55m wavelength range 77
Uniform low-to-high in composition InGaN layers grown on Si 76
Scalable quantum dot based optical interconnects 75
Highly sensitive and fast anion-selective InN quantum dot electrochemical sensors 74
Wavelength-sized cavities in high aspect InP/InGaAsP/InP photonic crystals 74
Spectrally encoded photonic crystal nanocavities by independent lithographic mode tuning 74
Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 μm 74
Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxy 73
Dual wavelength mode-locking of InAs/InP quantum dot laser diodes at 1.5μm 73
Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy 72
CW operation of a subwavelength metal-semiconductor nanolaser at record high temperature under electrical injection 72
Electromechanical wavelength tuning of double-membrane photonic crystal cavities 71
Anisotropic Piezoelectric Response from InGaN Nanowires with Spatially Modulated Composition and Topography over a Textured Si(100) Substrate 70
Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots 70
Nanowire superconducting single-photon detectors integrated with optical microcavities based on GaAs substrates 70
InP/InGaAs photodetector on SOI circuitry 70
Optothermal tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities 70
InGaAsP photonic crystal slot nanobeam waveguides for refractive index sensing 70
Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy 70
Local digital etching and infiltration for tuning of a H1- Cavity in deeply etched InP/InGaAsP/InP photonic crystals 70
Controlling mode degeneracy in a photonic crystal nanocavity with infiltrated liquid crystal 69
Observation of Dynamics in a 5 GHz Passively Mode-locked InAs/InP (100) Quantum Dot Ring Laser at 1.5 μm 69
Electrical injection, continuous wave operation of subwavelength-metallic- cavity lasers at 260 K 69
Room temperature CW operation of metal-semiconductor plasmonic nanolasers with subwavelength cavity 69
Formation of site-controlled InAs/InP quantum dots and their integration into planar structures 68
Low power penalty monolithically-cascaded 1550nm-wavelength quantum-dot crossbar switches 68
Recent advances in long wavelength quantum dot lasers and amplifiers 68
Monolithic multistage optical switch operating at 160 Gb/s line rate 67
Cyclic voltammetry for morphological analysis of InGaN epitaxial layers and nanostructures 67
Resonant biexciton quantum-dot cavity coupling and its potential for a fast 1.55- m-telecom-band single photon source 66
Ordered 1-D and 2-D InAs/InP quantum dot arrays at telecom wavelength 66
On the super-Nernstian potentiometric response of InN/InGaN quantum dots 66
Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays 66
Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal 66
InAs/InP(100) quantum dot waveguide photodetectors for swept-source optical coherence tomography around 1.7 μm 65
Spontaneous formation of InGaN nanowall network directly on Si 65
Semiconductor nanostructures towards electronic and optoelectronic device applications II (Symposium K, E-MRS 2009 Spring Meeting) 65
Cu2O as hole injection layer on In-rich InGaN nanowires 65
Formation of linear InAs/InGaAsP/InP (1 0 0) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy 65
Wavelength tuning of planar photonic crystals by local processing of individual holes 65
Comparison of the Extended Gate Field-Effect Transistor with Direct Potentiometric Sensing for Super-Nernstian InN/InGaN Quantum Dots 64
Quantum dots for future nanophotonic devices: Lateral ordering, position, and number control 64
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111) 64
Direct growth of vertically aligned ReSe2 nanosheets on conductive electrode for electro-catalytic hydrogen production 64
Totale 12.067
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Categoria #
all - tutte 39.910
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 39.910
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202164 0 0 0 0 0 0 0 0 0 0 17 47
2021/2022161 11 22 27 8 8 8 13 9 5 8 14 28
2022/2023264 32 75 20 14 17 40 3 20 22 2 13 6
2023/2024158 5 6 11 2 13 40 43 2 20 0 2 14
2024/20252.689 14 51 18 16 37 20 23 28 36 51 1.192 1.203
2025/202612.432 2.241 2.406 1.154 1.763 795 372 1.094 672 854 917 164 0
Totale 17.029