Bicocca Open Archive

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NOETZEL, RICHARD
 Distribuzione geografica
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Continente #
AS - Asia 8.055
NA - Nord America 2.190
SA - Sud America 1.441
EU - Europa 927
AF - Africa 84
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 1
Totale 12.700
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Nazione #
VN - Vietnam 2.833
SG - Singapore 2.250
US - Stati Uniti d'America 2.081
CN - Cina 1.699
BR - Brasile 1.169
HK - Hong Kong 667
KR - Corea 352
AR - Argentina 132
RU - Federazione Russa 129
DE - Germania 127
IT - Italia 123
SE - Svezia 87
AT - Austria 76
IE - Irlanda 75
GB - Regno Unito 74
UA - Ucraina 66
EC - Ecuador 60
BD - Bangladesh 54
CA - Canada 48
MX - Messico 44
FR - Francia 41
FI - Finlandia 38
ID - Indonesia 38
IN - India 36
ZA - Sudafrica 30
NL - Olanda 28
TR - Turchia 27
IQ - Iraq 24
PY - Paraguay 24
MA - Marocco 16
DK - Danimarca 15
CO - Colombia 13
PL - Polonia 12
VE - Venezuela 12
CL - Cile 11
PE - Perù 11
EG - Egitto 10
TN - Tunisia 10
JP - Giappone 9
PK - Pakistan 9
UY - Uruguay 9
KE - Kenya 8
UZ - Uzbekistan 8
BE - Belgio 7
BG - Bulgaria 7
ES - Italia 7
JO - Giordania 6
CR - Costa Rica 5
SA - Arabia Saudita 5
AZ - Azerbaigian 4
BH - Bahrain 4
CZ - Repubblica Ceca 4
DO - Repubblica Dominicana 4
IL - Israele 4
MY - Malesia 4
OM - Oman 4
AE - Emirati Arabi Uniti 3
KW - Kuwait 3
TW - Taiwan 3
AL - Albania 2
BW - Botswana 2
ET - Etiopia 2
IR - Iran 2
JM - Giamaica 2
MU - Mauritius 2
NP - Nepal 2
SV - El Salvador 2
AU - Australia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
CH - Svizzera 1
CI - Costa d'Avorio 1
EU - Europa 1
GA - Gabon 1
GT - Guatemala 1
HN - Honduras 1
HR - Croazia 1
LB - Libano 1
LK - Sri Lanka 1
LT - Lituania 1
LV - Lettonia 1
NG - Nigeria 1
NO - Norvegia 1
PH - Filippine 1
PS - Palestinian Territory 1
PT - Portogallo 1
QA - Qatar 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TT - Trinidad e Tobago 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 12.700
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Città #
Singapore 975
Ho Chi Minh City 889
Hefei 761
Hanoi 703
Hong Kong 665
Seoul 348
Ann Arbor 223
Ashburn 204
Woodbridge 168
Fairfield 124
Los Angeles 117
Beijing 116
São Paulo 105
Buffalo 95
Ha Long 93
Haiphong 85
Dallas 83
Houston 81
Da Nang 79
Wilmington 73
Dublin 72
Chandler 71
Jacksonville 63
Cambridge 58
Seattle 57
Biên Hòa 53
Hải Dương 51
Vienna 51
Rio de Janeiro 50
Guangzhou 49
Quận Bình Thạnh 46
Thái Nguyên 46
Bắc Ninh 44
Can Tho 43
Dearborn 43
Ninh Bình 43
Frankfurt am Main 40
Milan 40
New York 37
Santa Clara 37
Chicago 36
Quận Một 36
Vũng Tàu 33
Munich 32
Nanjing 31
Bắc Giang 28
Princeton 28
Mexico City 25
Belo Horizonte 24
Phủ Lý 24
Vinh 24
Shanghai 23
Guayaquil 22
Brasília 21
Quận Phú Nhuận 20
Quận Sáu 20
Falkenstein 18
Dong Ket 17
Goiânia 17
Điện Bàn 17
Des Moines 16
Thái Bình 16
Quận Tân Phú 15
Salvador 15
Council Bluffs 14
Montreal 14
Moscow 14
Porto Alegre 14
Quito 14
Amsterdam 13
Curitiba 13
Helsinki 13
Lawrence 13
Huế 12
Lang Son 12
Nuremberg 12
Quảng Ninh 12
Tampa 12
Thu Dau Mot 12
Uyen Hung 12
Altamura 11
Bình Dương 11
Dhaka 11
Tianjin 11
Turku 11
Asunción 10
Hòa Bình 10
Lachine 10
Lấp Vò 10
Quận Bảy 10
Quận Mười 10
Quận Ninh Kiều 10
Quận Năm 10
Ribeirão Preto 10
Thanh Hóa 10
Toronto 10
Đồng Nai Province 10
Buenos Aires 9
Bến Cầu 9
Jinan 9
Totale 7.947
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Nome #
Dual-wavelength passive and hybrid modelocking of 3, 4.5 and 10 GHz InAs/InP (100) quantum dot lasers 388
Size-dependent exciton g factor in self-assembled InAs/InP quantum dots 353
Single-nanostructure bandgap engineering enabled by magnetic-pulling thermal evaporation growth 331
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors 330
InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides 311
Growth Suppression by Metal Droplets of In0.5Ga0.5N/Si(111) at Low Temperatures 290
Raman spectroscopy of epitaxial InGaN/Si in the central composition range 247
1.55-μm InAs quantum dot number and size control on truncated InP pyramids and integration by selective area epitaxy 226
1.55 μm InAs quantum dot distribution on truncated InP pyramids and regrowth by selective area epitaxy 208
Ehrlich-Schwöbel effect on the growth dynamics of GaAs(111)A surfaces 203
Site-controlled Ag nanocrystals grown by molecular beam epitaxy - Towards plasmonic integration technology 202
A photodetector for red and green with balanced negative and positive photocurrent for imaging is realized 201
Ga crystallization dynamics during annealing of self-assisted GaAs nanowires 198
Recombination kinetics of InAs quantum dots: role of thermalization in dark states 184
Gain and phase dynamics of an InAs/InGaAsP/InP quantum-dot semiconductor optical amplifier at 1.55 μm 180
Exciton dark states in the recombination kinetics of InAs quantum dots 179
Quantum dot decoherence measured by ensemble photoluminescence 174
Carrier recombination kinetics in (311)A InGaAs sidewall quantum wires 172
Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces 172
Epitaxial InN/InGaN quantum dots on Si: Cl% anion selectivity and pseudocapacitor behavior 165
Coupling of single InGaAs quantum dots to the plasmon resonance of a metal nanocrystal 161
Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires 161
Temperature activated coupling in topologically distinct semiconductor nanostructures 154
Piezoelectric effects in sidewall quantum wires grown on patterned (311)A GaAs substrate 137
Controlling polarization anisotropy of site-controlled InAs/InP (100) quantum dots 134
Wood-derived electrode supporting CVD-grown ReS2 for efficient and stable hydrogen production 122
Single InAs quantum dot arrays and directed self-organization on patterned GaAs (311)B substrates 121
Temperature and Source Flux Dependence of Light Emission, In Incorporation and Quantum Confinement in Self-Formed Core-Shell InGaN Nanowires 109
Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling 91
Self-aligned epitaxial metal-semiconductor hybrid nanostructures for plasmonics 78
InP-based monolithically integrated tunable wavelength filters in the 1.6-1.8 μ m wavelength region for tunable laser purposes 77
From localization to quantum-dot chains in self-formed core-shell InGaN nanowires emitting in the red 76
Erratum: Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector (IEEE Transactions on Electron Devices (2022) 69:11 (6184-6187) DOI: 10.1109/TED.2022.3206181) 72
Sign reversal of visible to UV photocurrent in core-shell n-InGaN/p-GaN nanowire photodetectors 71
Visible-light photoelectrochemical photodetector based on In-rich InGaN/Cu2O core-shell nanowire p-n junctions 71
Evidence of two-dimensional lateral quantum confinement in self-formed core-shell InGaN nanowires on Si (111) emitting in the red 71
160Gb/s serial line rates in a monolithic optoelectronic multistage interconnection network 70
3D InGaN nanowire arrays on oblique pyramid-textured Si (311) for light trapping and solar water splitting enhancement 69
Red InGaN nanowire LED with bulk active region directly grown on p-Si (111) 69
Super-Nernstian potentiometric response of InN/InGaN quantum dots by fractional electron transfer 68
In Desorption in InGaN Nanowire Growth on Si Generates a Unique Light Emitter: From In-Rich InGaN to the Intermediate Core-Shell InGaN to Pure GaN 68
Fast self-powered n-InGaN layer/p-Cu2O microcrystal visible-light photoelectrochemical photodetector with high photocurrent and responsivity 66
ZIF-67 with Argon annealing treatment for visible light responsive degradation of organic dyes in a wide pH range 64
Ultraviolet photoelectrochemical photodetector based on GaN/Cu2O core-shell nanowire p-n heterojunctions 64
Planar GaN/Cu2O Microcrystal Composite Junction Photoanode for Efficient Solar Water Splitting 64
InN/InGaN Quantum Dot Abiotic One-Compartment Glucose Photofuel Cell: Power Supply and Sensing 64
Noise logic with an InGaN/SiNx/Si uniband diode photodetector 62
Transition from Metal-Rich to N-Rich Growth for Core-Shell InGaN Nanowires on Si (111) at the Onset of In Desorption 62
An InN/InGaN quantum dot nonlinear constant phase element 62
Comparison of InN/InGaN quantum dot and nanowire hydrogen peroxide and glucose photofuel cells: A case study 61
Integrated 2×2 quantum dot optical crossbar switch in 1.55m wavelength range 60
Origin of the Low-Frequency 1/f Noise of a Photoelectrochemical Photodetector 59
Hybrid semiconductor quantum dot-metal nanocrystal structures prepared by molecular beam epitaxy 58
Tuning of narrow-bandwidth photonic crystal devices etched in InGaAsP planar waveguides by Liquid Crystal infiltration 58
Acoustic carrier transport in InP-based structures 57
(S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN 57
Transfer printing and nanomanipulating luminescent photonic crystal membrane nanocavities 55
Scalable quantum dot based optical interconnects 55
Dual wavelength mode-locking of InAs/InP quantum dot laser diodes at 1.5μm 55
InGaAsP photonic crystal slot nanobeam waveguides for refractive index sensing 54
Integrated tunable quantum dot laser for optical coherence tomography in the 1.7μm wavelength region 53
Spectrally encoded photonic crystal nanocavities by independent lithographic mode tuning 53
Nanowire superconducting single-photon detectors integrated with optical microcavities based on GaAs substrates 53
Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal 53
Wavelength-sized cavities in high aspect InP/InGaAsP/InP photonic crystals 52
InP/InGaAs photodetector on SOI circuitry 52
Optothermal tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities 52
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111) 52
Highly sensitive and fast anion-selective InN quantum dot electrochemical sensors 51
Quantum dots for future nanophotonic devices: Lateral ordering, position, and number control 51
Comparison of the Extended Gate Field-Effect Transistor with Direct Potentiometric Sensing for Super-Nernstian InN/InGaN Quantum Dots 50
Controlling mode degeneracy in a photonic crystal nanocavity with infiltrated liquid crystal 50
On the super-Nernstian potentiometric response of InN/InGaN quantum dots 50
Anisotropic Piezoelectric Response from InGaN Nanowires with Spatially Modulated Composition and Topography over a Textured Si(100) Substrate 50
Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots 50
Local digital etching and infiltration for tuning of a H1- Cavity in deeply etched InP/InGaAsP/InP photonic crystals 50
Wavelength tuning of planar photonic crystals by local processing of individual holes 50
Uniform low-to-high in composition InGaN layers grown on Si 49
Room temperature CW operation of metal-semiconductor plasmonic nanolasers with subwavelength cavity 49
Monolithic multistage optoelectronic switch circuit routing 160 Gb/s line-rate data 48
Monolithic multistage optical switch operating at 160 Gb/s line rate 48
Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 μm 48
160Gbit/s line-rate data routing through monolithic multi-stage optical switch circuit 48
Recent advances in long wavelength quantum dot lasers and amplifiers 48
CW operation of a subwavelength metal-semiconductor nanolaser at record high temperature under electrical injection 48
Observation of Dynamics in a 5 GHz Passively Mode-locked InAs/InP (100) Quantum Dot Ring Laser at 1.5 μm 47
Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopy 47
Enhanced terahertz radiation from InAs (100) with an embedded InGaAs hole blocking layer 47
Electromechanical wavelength tuning of double-membrane photonic crystal cavities 47
Passively mode-locked 4.6 and 10.5GHz quantum dot laser diodes around 1.55m with large operating regime 46
Electromechanically tunable photonic crystal cavities 46
Combining selective area growth and self-organized strain engineering for site-controlled local InAs/InP quantum dot arrays 46
Cyclic voltammetry for morphological analysis of InGaN epitaxial layers and nanostructures 46
Deterministic self-organization: Ordered positioning of InAs quantum dots by self-organized anisotropic strain engineering on patterned GaAs (311)B 46
InAs/InP(100) quantum dot waveguide photodetectors for swept-source optical coherence tomography around 1.7 μm 45
Birefringence-induced mode-dependent tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities 45
InAs/InP quantum dots, dashes, and ordered arrays 45
Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy 45
In situ optofluidic control of reconfigurable photonic crystal cavities 45
Sagnac loop reflector and arrayed waveguide grating-based multi-wavelength laser monolithically integrated on InP 45
Totale 9.847
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Categoria #
all - tutte 32.677
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 32.677
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021214 0 0 0 0 0 31 27 28 29 35 17 47
2021/2022161 11 22 27 8 8 8 13 9 5 8 14 28
2022/2023264 32 75 20 14 17 40 3 20 22 2 13 6
2023/2024158 5 6 11 2 13 40 43 2 20 0 2 14
2024/20252.689 14 51 18 16 37 20 23 28 36 51 1.192 1.203
2025/20268.698 2.241 2.406 1.154 1.763 795 339 0 0 0 0 0 0
Totale 13.295