We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantum wires (QWR) on patterned GaAs (3 1 1)A substrates by means of picosecond time-resolved photoluminescence (PL). A pronounced dynamical red shift of the QWR-PL band when increasing the delay time after the pulse excitation is observed. In addition. time-resolved data show a significant shortening of the PL decay time from the wire at short delay and when high excitation power is used. The data are compared with theoretical predictions. The results, i.e. the dynamical red shift observed in the wire emission and the shortening of the PL decay with increasing the excitation density, are interpreted in terms of a dynamical screening effect of the piezoelectric field. (C) 2003 Elsevier B.V. All rights reserved.
Alderighi, D., Zamfirescu, M., Gurioli, M., Vinattieri, A., Colocci, M., Sanguinetti, S., et al. (2004). Carrier recombination kinetics in (311)A InGaAs sidewall quantum wires. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 23(3-4), 449-454 [10.1016/j.physe.2004.02.008].
Carrier recombination kinetics in (311)A InGaAs sidewall quantum wires
SANGUINETTI, STEFANO;
2004
Abstract
We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantum wires (QWR) on patterned GaAs (3 1 1)A substrates by means of picosecond time-resolved photoluminescence (PL). A pronounced dynamical red shift of the QWR-PL band when increasing the delay time after the pulse excitation is observed. In addition. time-resolved data show a significant shortening of the PL decay time from the wire at short delay and when high excitation power is used. The data are compared with theoretical predictions. The results, i.e. the dynamical red shift observed in the wire emission and the shortening of the PL decay with increasing the excitation density, are interpreted in terms of a dynamical screening effect of the piezoelectric field. (C) 2003 Elsevier B.V. All rights reserved.
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